Page 1
Integrated
ICS9 112-31/32
Circuit
Systems, Inc.
Preliminary Product Preview
Frequency Generator for Fibre Channel Systems
General Description Features
The ICS9112-31/32 are high-speed clock generators designed
to support fibre channel system requirements. The ICS9112-
31/32 generates 106.25 MHz from a 25 MHz crystal.
An exact frequency multiplying ratio ensures better than
±100 ppm frequency accuracy using a standard AT crystal
with external load capacitors (typically 33pF ±5% for an
18pF load crystal). Achieving ±100 ppm over four years
requires the crystal to have a ±20 ppm initial accuracy, ±30
ppm temperature and ±5 ppm/year aging coefficients.
The ICS9112-31/32 with less than 25ps accumulative jitter
is well suited for Fibre Channel applications.
Block Diagram
• Generates 106.25 MHz clocks from a 25 MHz
crystal
• Less than 45ps one sigma jitter (15ps typ.)
• Less than ±130ps absolute jitter
• Less than 25ps accumulative jitter @ 256 cycles
• Rise/fall times less than 1.2ns driving 15pF
• On-chip loop filter components
• 3.0V-5.5V supply range
• 8-pin, 150-mil SOIC package
Applications
• Specifically designed to support the high-speed
clocking requirements of fibre channel systems.
9112-31 9112-32 Rev D 3/2/99
PRODUCT PREVIEW documents contain information on new
products in the sampling or preproduction phase of development.
Characteristic data and other specifications are subject to change
without notice.
Page 2
ICS9112-31/32
Preliminary Product Preview
Pin Configurations
8-Pin SOIC
Functionality
EO
100.5252.601
000.52etatsirT
Pin Descriptions
NIP
REBMUN
1DNGARWP.dnuorggolanA
2DNGRWP.dnuorGlatigiD
31XNI .sroticapacdaollanretxeseriuqeR.zHM00.52yllanimon;ecivedottupnikcolcrolatsyrC
42XNI.sroticapacdaollanretxeseriuqeR.ecivedmorftuptuoevirdlatsyrC
5EONI )TUOF(tuptuokcolcehtsetatsirtti,wolsiEOnehw:).pu_lluplanretnisah(elbanEtuptuO
6
7
81KLCTUO)zHM52.601(tuptuokcolC
DDVRWP)13-(ylppustlov0.5+ro3.3+
EMANNIPEPYTNOITPIRCSED
2KLCTUO)23-()zHm52.601(tuptuokcolC
DDVARWP)13-(.)egatlovrewoplatigidlauqetsuM(.rewopgolanA
DDVA+DDVRWP)23-(ylppustloV0.5+ro3.3+,rewopgolanadnalatigiD
8-Pin SOIC
2X,1X
)zHM(
TUOF
)zHM(
2
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ICS9112-31/32
Preliminary Product Preview
Absolute Maximum Ratings
AVDD, VDD referenced to GND . . . . . . . . . . . . . . . 7V
Operating temperature under bias. . . . . . . . . . . . . . . . 0°C to +70°C
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Voltage on I/O pins referenced to GND. . . . . . . . . . . GND -0.5V to VDD +0.5V
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 Watts
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect product reliability.
Electrical Characteristics at 5.0V
Operating VDD = +4.5V to +5.5V; TA =0°C to 70°C unless otherwise stated
RETEMARAPLOBMYSSNOITIDNOCTSETNIMPYTXAMSTINU
egatloVwoLtupnIV
egatloVhgiHtupnIV
tnerruCwoLtupnII
tnerruChgiHtupnII
1
egatloVwoLtuptuO
1
egatloVhgiHtuptuO
1
tnerruCwoLtuptuO
1
tnerruChgiHtuptuO
tnerruCylppuSI
1
rotsiseRpu-lluP
1
emiTesiR
1
emiTllaF
1
elcyCytuD
1
amgiSenO,rettiJ
1
etulosbA,rettiJ
1
rettiJevitalumuccA
1
ycneuqerFtupnI
1
ycneuqerFtuptuO
1
emiTpu-rewoP
1
ecnaticapaCtupnIlatsyrC
LI
HI
V
LI
HI
V
LO
V
HO
I
LO
I
HO
DD
R
up
T
1r
T
1f
D
t
T
s1j
T
baj
T
ccaj
F
i
F
o
T
up
C
xni
NI
VNIV=
I
LO
I
HO
V
V
DD
Am01=-51.004.0V
Am03-=4.252.3-V
V8.0=0.220.53-Am
LO
V0.2=-0.05-0.53-Am
HO
dedaolnU-0.220.54Am
daolFp51-0.510.54sp
daolFp510.031-0.031sp
)1niP(1X
)8niP(2X
scitsiretcarahCCD
-- 8.0V
0.2--V
)tupnipu-lluP(V0=0.61-0.6--Aµ
0.2--0.2Aµ
-001- smhok
scitsiretcarahCCA
V0.2ot8.0,daolFp51-8.02.1sn
V8.0ot0.2,daolFp51-7.02.1sn
V4.1@daolFp510.240.940.55%
elcyC652@daolFp51-0.71-sp
-0.52- zHM
-52.601-zHM
-85.70.81sm
-0.3-Fp
Note 1: Parameter is guaranteed by design and characterization. Not 100% tested in production.
3
Page 4
ICS9112-31/32
Preliminary Product Preview
Electrical Characteristics at 3.3V
Operating V
= +3.0V to +3.7V; TA =0°C to 70°C unless otherwise stated
DD
RETEMARAPLOBMYSSNOITIDNOCTSETNIMPYTXAMSTINU
egatloVwoLtupnIV
egatloVhgiHtupnIV
tnerruCwoLtupnII
tnerruChgiHtupnII
1
egatloVwoLtuptuO
1
egatloVhgiHtuptuO
1
tnerruCwoLtuptuO
1
tnerruChgiHtuptuO
LI
HI
LI
HI
V
LO
V
HO
I
LO
I
HO
V
NI
VNIV=
I
I
V
V
DD
Am6=-V50.0
LO
Am5-=V58.0
HO
V2.0=
LO
HO
DD
V7.0=
DD
tnerruCylppuSIDDdedaolnU-0.410.03Am
1
rotsiseRpu-lluP
1
emiTesiR
1
emiTllaF
1
elcyCytuD
1
amgiSenO,rettiJ
1
etulosbA,rettiJ
1
rettiJevitalumuccA
1
ycneuqerFtupnI
1
ycneuqerFtuptuO
1
emiTpu-rewoP
1
ecnaticapaCtupnIlatsyrC
R
up
T
1r
T
1f
D
t
T
s1j
T
baj
T
ccaj
F
i
F
o
T
up
C
xni
V0.2ot8.0,daolFp51-56.02.1sn
V8.0ot0.2,daolFp51-6.02.1sn
V4.1@daolFp510.040.050.06%
daolFp51-0.510.54sp
daolFp510.031--0.031sp
)1niP(1X
)8niP(2X
scitsiretcarahCCD
--V02.0
V7.0
DD
--V
DD
)tupnipu-lluP(V0=0.7-5.2--Aµ
0.2--0.2Aµ
DD
DD
V29.0
DD
V1.0
DD
-V
0.510.22-Am
-0.71-0.01-Am
-0.571- smhok
scitsiretcarahCCA
elcyc652@daolFp51-0.71-sp
-0.52- zHM
-52.601-zHM
-85.70.81sm
-0.3-Fp
V
V
Note 1: Parameter is guaranteed by design and characterization. Not 100% tested in production.
4
Page 5
Preliminary Product Preview
8-Pin Plastic SOIC Package
ICS9112-31/32
Ordering Information
ICS9112M-31/32
Example:
ICS XXXX M-PPP
Pattern Number(2 or 3 digit number for parts with ROM code patterns)
Package T ype
M=SOIC, SOP
Device T ype (consists of 3 or 4 digit numbers)
Prefix
ICS=Standard Device
PRODUCT PREVIEW documents contain information on new
products in the sampling or preproduction phase of development.
5
Characteristic data and other specifications are subject to change
without notice.
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