Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP29C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP29C is designed for use in general purpose amplifier and
switching applications.
Spec. No. : HE6768
Issued Date : 1994.07.29
Revised Date : 2002.02.20
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 30 W
Total Power Dissipation (Ta=25°C)....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 1 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA, IE=0
BVCEO 100 - - V IC=30mA, IB=0
ICES - - 200 uA VCE=100V, IB=0
ICEO - - 300 uA VCE=60V, IB=0
IEBO - - 1 mA VEB=5V
*VCE(sat) - - 0.7 V IC=1A, IB=125mA
*VBE(on) - - 1.3 V IC=1A, VCE=4V
*hFE1 40 - - IC=0.2A, VCE=4V
*hFE2 15 - 75 IC=1A, VCE=4V
fT 3 - - MHz IC=0.2A, VCE=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HTIP29C HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6768
Issued Date : 1994.07.29
Revised Date : 2002.02.20
Page No. : 2/3
1000
Cur rent G ain & C o llector Current
hFE @ VCE=4V
100
hFE
10
1 10 100 1000
1000
ON Voltage & Collector Current
25oC
75oC
125oC
25oC
75oC
Collector Current IC (mA)
1000
CE(sat)
V
100
Saturation Voltage (mV)
10
1 10 100 1000
B
@ IC=8I
Collector Current- IC (mA)
75oC
25oC
125oC
Switching Time & Collector Current
10.0
Sat urati on Voltage & Collector Cu rrent
VCC=30V, IC=10IB1=-10I
B2
125oC
ON Voltage (mV)
100
1 10 100 1000
Collector Current- IC (mA)
BE(ON)
V
@ VCE=4V
Capacita nce & Reverse-Biased Voltage
1000
100
Capacitance (pF)
Cob
10
0.1 1 10 100
Reverse-Biased Vol tage (V)
1.0
Switching Times (us)...
0.1
0.1 1.0 10.0
Collect o r Current ( A)
Tstg
Ton
Tf
Safe Operating Ar ea
100000
PT=1ms
10000
(mA)
C
Collector Current-I
1000
PT=100ms
PT=1s
100
10
1 10 100 1000
Forwar d Voltage-VCE (V)
HTIP29C HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A
D
B
Spec. No. : HE6768
Issued Date : 1994.07.29
Revised Date : 2002.02.20
Page No. : 3/3
Marking:
E
C
HIP
T
29C
Date Code
Control Code
H
Style: Pin 1.Base 2.Collector 3.Emitter
G
I
3
M
2
K
N
1
4
OP
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead : 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP29C HSMC Product Specification
Loading...