Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP122 is designed for use in general purpose amplifier and lowspeed switching applications.
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2002.05.07
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 65 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 100 V
BVCEO Collector to Emitter Voltage.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current (Continuous)...................................................................................................... 5 A
IC Collector Current (Peak)................................................................................................................ 8 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA, IE=0
*BVCEO 100 - - V IC=100mA
ICBO - - 200 uA VCB=100V
ICEO - - 500 uA VCE=50V
IEBO - - 2 mA VEB=5V
*VCE(sat)1 - - 2 V IC=3A, IB=12mA
*VCE(sat)2 - - 4 V IC=5A, IB=20mA
*VBE(on) - - 2.5 V IC=3A, VCE=3V
*hFE1 1 - - K IC=0.5A, VCE=3V
*hFE2 1 - - K IC=3A, VCE=3V
Cob - - 200 pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
C
B
R2R1
E
HTIP122 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2002.05.07
Page No. : 2/4
100000
hFE @ VCE=3V
10000
1000
hFE
100
10
1 10 100 1000 10000
125oC
25oC
Collector Current- IC (mA)
75oC
Sat urati on Voltage & Collcetor Cu rrent
10000
Current Gain & Collector Current
CE(sat)
V
@ IC=2000I
B
10000
CE(sat)
V
@ IC=250I
1000
Satur ation Voltage ( m V)
100
100 1000 10000
25oC
125oC
B
75oC
Collector Current-IC (mA)
Sat urati on Voltage & Colltctor Current
10000
Sat ura tion Voltage & C ollector C urrent
75oC
1000
Saturation Voltage (mV)
100
1000 10000
25oC
125oC
Collector Current- IC (mA)
ON Voltage & C ollcetor Curr ent
10000
BE(ON)
V
@ VCE=3V
75oC
25oC
1000
ON Voltage ( m V)
125oC
75oC
1000
Saturation Voltage (mV)
100
100 1000 10000
25oC
125oC
CE(sat)
V
Collector Current- IC (mA)
@ IC=500I
B
Capa citance & Reverse- Biased Volt a ge
1000
100
Capacitance ( pF)
Cob
100
100 1000 10000
Collector Current-IC (mA)
10
0.1 1 10 100
Reverse-Biased Vol tage (V)
HTIP122 HSMC Product Specification
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HI-SINCERITY
)
MICROELECTRONICS CORP.
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2002.05.07
Page No. : 3/4
Switchi ng Time & Col lector Current
10
VCC=30V, IC=250IB1=-250I
1
Switching Times (us)...
0.1
110
B2
Tstg
Tf
Ton
Collector Current (A)
100000
10000
1000
100
Collector Curr ent (mA
10
1
PT=1ms
PT=100ms
PT=1s
1 10 100
Safe Operating Area
Collector-Emit t er Forwar d Vol tage (V)
HTIP122 HSMC Product Specification
Page 4
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A
D
B
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2002.05.07
Page No. : 4/4
Marking:
E
C
H
1
22
IP
T
Date Code
Control Code
H
Style: Pin 1.Base 2.Collector 3.Emitter
G
I
3
M
2
K
N
1
4
OP
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
•
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP122 HSMC Product Specification
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