Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP117 is designed for use in general purpose amplifier and lowspeed switching applications.
Spec. No. : HE200204
Issued Date : 2000.08.01
Revised Date : 2002.01.18
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 50 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage............................................................................................... -100 V
BVCEO Collector to Emitter Voltage............................................................................................ -100 V
BVEBO Emitter to Base Voltage...................................................................................................... -5 V
IC Collector Current (Continue)........................................................................................................ -4 A
IC Collector Current (Peak).............................................................................................................. -6 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=-1mA
BVCEO -100 - - V IC=-30mA
ICBO - - -1 mA VCB=-100V
ICEO - - -2 mA VCE=-50V
IEBO - - -2 mA VEB=-5V
*VCE(sat) - - -2.5 V IC=-2A, IB=-8mA
*VBE(on) - - -2.8 V IC=-2A, VCE=-4V
*hFE1 1 - - K I C= -1A, VCE=-4V
*hFE2 500 - - IC=-2A, VCE=-4V
Cob - - 200 pF VCB=-10V, f=0.1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
C
B
R2R1
E
HTIP117 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE200204
Issued Date : 2000.08.01
Revised Date : 2002.01.18
Page No. : 2/3
100000
10000
1000
hFE
100
10
1
1 10 100 1000 10000
125oC
25oC
hFE @ VCE=4V
Collec tor Current IC (mA)
ON Volta ge & Collect or Cu rrent
10000
Cur ren t Ga in & C ollector Cu rrent
BE(ON)
V
75oC
ON Voltage ( m V)
25oC
1000
125oC
75oC
@ VCE=4V
10000
1000
Saturation Voltage (mV)
100
Sat uration Voltage & Collcetor Current
75oC
25oC
125oC
CE(sat)
V
@ IC=250I
100 1000 10000
Collector Current IC (mA)
Swi tching Time & Collector C urrent
10
VCC=30V, IC=250IB1= -250I
1
Swit c hing T ime ( us)
B2
Tstg
Tf
Ton
B
100
1 10 100 1000 10000
Collec tor Current IC (mA)
Capacitan ce & Revierse-Biased Voltage
1000
100
Capacitan ce ( p F)
10
0.1 1 10 100
Rev e r se- Biased Voltage ( V)
Cob
0.1
110
100000
PT=1m s
10000
(mA)
C
1000
100
PT=100ms
PT=1s
Collec tor Current-IC (A)
Safe Operating Area
Collector Current-I
10
1
1 10 100
Forw ard Voltage-VCE (V)
HTIP117 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A
D
B
Spec. No. : HE200204
Issued Date : 2000.08.01
Revised Date : 2002.01.18
Page No. : 3/3
Marking:
E
C
HTIP
117
Date Code
Control Code
H
Style: Pin 1.Base 2.Collector 3.Emitter
G
I
3
M
2
K
N
1
4
OP
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
•
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP117 HSMC Product Specification
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