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HSU276A
Silicon Schottky Barrier Diode for Mixer
ADE-208-837(Z)
Rev 0
Feb. 2000
Features
• High forward current, Low capacitance.
• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSU276A S5 URP
Outline
Cathode mark
Mark
12
S5
1. Cathode
2. Anode
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HSU276A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
V
RRM
voltage
Reverse voltage V
Average rectified current I
R
O
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Reverse current I
Forward current I
R
R
F
Capacitance C — — 0.85 pF VR = 0.5V, f = 1 MHz
ESD-Capability
*1
— 30 — — V C=200pF , Both forward and reverse direction
Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
3——VIR = 1 mA
——50µAVR = 0.5V
35 — — mA VF = 0.5V
5V
3V
30 mA
1 pulse.
2
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Main Characteristic
HSU276A
-1
10
-2
10
(A)
F
-3
10
Forward current I
-4
10
-5
10
0
Ta= 75°C
Ta= 25°C
0.4 0.6
0.2
Forward voltage V
F
(V)
Fig.1 Forward current Vs. Forward voltage
0.8
1.0
-2
10
-3
10
(A)
R
-4
10
Reverse current I
-5
10
-6
10
0
1.0
Ta= 75°C
Ta= 25°C
3.02.0
Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
4.0
5.0
10
1.0
Capacitance C (pF)
0.1
0.1
Reverse voltage V R (V)
1.0
Fig.3 Capacitance Vs. Reverse voltage
f=1MHz
10
3
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HSU276A
Package Dimensions
1.7 ± 0.15
2.5 ± 0.15
0.3 ± 0.15
1.25 ± 0.15
Unit: mm
0 - 0.10
0.9 ± 0.15
Hitachi Code
JEDEC
EIAJ
Mass
URP
—
—
0.004 g
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HSU276A
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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