Page 1
HSU227
Silicon Schottky Barrier Diode for High Speed Switching
ADE-208-779(Z)
Rev 0
Mar. 1999
Features
• Low capacitance. (C=3.0pF max)
• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSU227 S3 URP
Outline
Cathode mark
Mark
12
S3
1. Cathode
2. Anode
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HSU227
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
V
RRM
voltage
Average rectified current I
Non-Repetitive peak
I
o
FSM
*2
forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Note: 1. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Capacitance C — 2.45 3.0 pF VR = 1V, 1=1MHz
— 0.29 0.35 V IF = 1mA
— 0.3 2.0 µAVR = 20V
25 V
50 mA
200 mA
2
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Main Characteristic
HSU227
1.0
Pulse test
-1
10
-2
10
F
-3
10
-4
10
Forward current I (A)
-5
10
-6
10
0
0.2
Forward voltage V (V)
0.4
F
Fig.1 Forward current Vs. Forward voltage
10
f=1MHz
-4
10
Pulse test
-5
10
R
-6
10
Reverse current I (A)
-7
10
-8
0.60.1 0.50.3
10
0
510
Reverse voltage V (V)
15 20
R
25
Fig.2 Reverse current Vs. Reverse voltage
1.0
Capacitance C (pF)
-1
10
1.0
Reverse voltage V (V)
Fig.2 Capacitance Vs. Reverse voltage
10
40
R
3
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HSU227
Package Dimensions
Unit : mm
Cathode Mark
1
S3
1.7±0.15
2.5±0.15
0 — 0.10
2
0.3±0.150.9±0.15
1.25±0.15
Hitachi Code
JEDECCode
EIAJCode
Weight(g)
1. Cathode
2. Anode
URP
—
—
0.004
4
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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