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HSM276S
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-039E (Z)
Features
• High forward current, Low capacitance.
• HSM276S which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM276S C2 MPAK
Rev 5
Jul 1998
Outline
3
2
(Top View)
1
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
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HSM276S
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Average rectified current I
R
O
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Reverse current I
Forward current I
R
R
F
Capacitance C — — 0.90 pF VR = 0.5V, f = 1 MHz
Capacitance deviation ∆ C — — 0.10 pF VR = 0.5V, f = 1 MHz
ESD-Capability
*1
— 30 — — V C=200pF , Both forward and reverse
Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
3.0 — — V IR = 1 mA
——50µAVR = 0.5V
35——mAVF = 0.5V
3V
30 mA
direction 1 pulse.
2
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Main Characteristic
HSM276S
-1
10
-2
10
F
-3
10
-4
Forward current I (A)
10
-5
10
0.2
0
0.4
Forward voltage V (V)
0.6
0.8
F
Fig.1 Forward current Vs. Forward voltage
f=1MHz
1.0
-2
10
-3
10
R
-4
10
Reverse current I (A)
-5
10
-6
10
0
1.0
Reverse voltage V (V)
4.0
3.02.0
R
Fig.2 Reverse current Vs. Reverse voltage
5.0
10
1.0
Capacitance C (pF)
-1
10
-1
10 1.0
Reverse voltage V (V)
Fig.3 Capacitance Vs. Reverse voltage
10
R
3
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HSM276S
Package Dimensions
Laser Mark
3
0.4
+ 0.10
– 0.05
+ 0.1
0.65
– 0.3
0.16
+ 0.10
– 0.06
Unit : mm
C 2
21
0.95
0.95
1.9
+ 0.3
2.8
– 0.1
1.5
+ 0.1
– 0.3
0.65
0.3
+ 0.2
2.8
+ 0.2
1.1
– 0.6
– 0.1
0 – 0.10
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
MPAK(1)
—
SC-59A
0.011
4
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Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
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beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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