HS-5104ARH
Data Sheet August 1999
Radiation Hardened Low Noise Quad
Operational Amplifier
The HS-5104ARH is a radiation hardened, monolithic quad
operational amplifier that provides highly reliable
performance in harsh radiation environments. Its excellent
noise characteristics coupled with an unique array of
dynamic specifications make this amplifier well-suited for a
variety of satellite system applications. Dielectrically
isolated, bipolar processing makes this device immune to
Single Event Latch-Up.
The HS-5104ARH shows almost no change in offset voltage
after exposure to 100kRAD(Si) gamma radiation, with only a
minor increase in current. Complementing these specifications
is a post radiation open loop gain in excess of 40K.
This quad operational amplifier is available in an industry
standard pinout, allowing for immediate interchangeability
with most other quad operational amplifiers.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95690. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
File Number 3025.3
Features
• Electrically Screened to SMD # 5962-95690
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 1 x 10
5
RAD(Si)
• Low Noise
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . .4.3nV/√
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . .0.6pA/√
Hz (Typ)
Hz (Typ)
• Low Offset Voltage . . . . . . . . . . . . . . . . . . . . 3.0mV (Max)
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 2.0V/µs (Typ)
• Gain Bandwidth Product . . . . . . . . . . . . . . . 8.0MHz (Typ)
Applications
• High Q, Active Filters
• Voltage Regulators
• Integrators
• Signal Generators
• Voltage References
• Space Environments
Ordering Information
Pinouts
HS-5104ARH (SBDIP) CDIP2-T14
TOP VIEW
OUT 1
OUT 2
-IN1
+IN1
+IN2
-IN2
V+
1
2
3
4
5
6
7
INTERNAL
ORDERING NUMBER
5962R9569001V9A HS0-5104ARH-Q 25
5962R9569001VCC HS1-5104ARH-Q -55 to 125
5962R9569001VXC HS9-5104ARH-Q -55 to 125
HS1-5104ARH/PROTO HS1-5104ARH/PROTO -55 to 125
HS-5104ARH (FLATPACK) CDFP3-F14
OUT 4
14
-IN4
13
+IN4
12
V-
11
+IN3
10
-IN3
9
8
OUT 3
OUT 1
-IN1
+IN1
V+
+IN2
-IN2
OUT 2
MKT. NUMBER
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
8
TEMP.RANGE
(oC)
OUT 4
-IN4
+IN4
V+IN3
-IN3
OUT 3
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HS-5104ARH
Burn-In Circuit
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1
2
3
4
5
6
7
-
+
2 3
+
-
+V
C1
D1
R1
R2
NOTES:
1. R1 = R2 = R3 = R4 = 1MW, 5%, 1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
3. D1 = D2 = IN4002 or Equivalent/Board
4. |(V+) - (V-)| = 31V ±1V
14
4
13
-
R4
+
12
11
R3
10
+
-
9
8
D2
C2
Irradiation Circuit
+15V
-
+
-V
NOTES:
5. +V = 15V
6. -V = -15V
7. Group E Sample Size = 4 Die Per Wafer
-15V
(ONE OF FOUR)
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Die Characteristics
HS-5104ARH
DIE DIMENSIONS:
95 mils x 99 mils x 19 mils ±1 mils
(2420µm x 2530µm x 483µm ±25.4µm)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Å ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
Top Metallization:
Type: Al, 1% Cu
Thickness: 16k
Å ±2kÅ
Substrate:
Bipolar Dielectric Isolation
Metallization Mask Layout
+IN2 V+ +IN1
-IN2
HS-5104ARH
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
5
2
<2.0 x 10
A/cm
Transistor Count:
175
-IN1
OUT2
OUT3
-IN3
+IN4V-+IN3
OUT1
OUT4
-IN4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reservesthe right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believ ed to be accurate and
reliable. Howe ver, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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