Datasheet HS-307RH-883S, HS-384RH-883S, HS-390RH-883S, HS-302RH-883S, HS-303RH-883S Datasheet (Intersil Corporation)

September 1995

HS-302RH/883S, HS-303RH/883S,
HS-306RH/883S, HS-307RH/883S,

HS-384RH/883S, HS-390RH/883S

Radiation Hardened

CMOS Analog Switches

Features

• This Circuit is Processed in Accordance to Mil-Std­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• Radiation Hardened

- Functional Total Dose Exceeds 1 x 10

• Pin for Pin Compatible with Intersil HI-3XX Series
Analog Switches

• Analog Signal Range 15V

• Low Leakage

•Low R

• No Latch Up

• Versions for 5V and 15V Digital Systems

• Low Operating Power

• Military Temperature Range -55

ON

o

C to +125oC

5

RAD Si

Applications

• Sample and Hold i.e. Low Leakage Switching

• Op Amp Gain Switching i.e. Low ON Resistance

• Switched Capacitor Filters

• Low Level Switching Circuits

• Satellites

• Nuclear Reactor Controls

• Military Environments

Description

The HS-3XXRH/883S family of analog switches are
monolithic devices fabricated using Radiation Hardened
CMOS technology and the Intersil dielectric isolation pro­cess for latch-up free operation. Improved total dose hard­ness is obtained by layout (thin oxide tabs extending to a
channel stop) and processing (hardened gate oxide). These
switches offer low-resistance switching performance for ana­log voltages up to the supply rails. “ON” resistance is low
and stays reasonably constant over the full range of operat­ing voltage and current. “ON” resistance also stays reason­ably constant when exposed to radiation, being typically 30Ω
pre-rad and 35Ω post 100K RAD-Si. All devices provide
break-before-make switching.

The 6 devices in this switch series are differentiated by type
of switch action, pinout and digital logic levels. The HS-302/
303/384/390RH/883S switches have 5V digital inputs while
the HS-306/307RH/883S switches have 15V digital inputs.
All devices are available in Ceramic Flatpack and SBDIP
packages. The HS-3XXRH/883S switches can directly
replace the HI-3XX series devices.

Functional Diagram

IN

N P

D

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HS1-302RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead SBDIP

HS9-302RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack

HS1-302RH/Sample +25oC Sample 14 Lead SBDIP

HS9-302RH/Sample +25oC Sample 14 Lead Ceramic Flatpack

HS1-303RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead SBDIP

HS9-303RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack

HS1-303RH/Sample +25oC Sample 14 Lead SBDIP

HS9-303RH/Sample +25oC Sample 14 Lead Ceramic Flatpack

HS1-306RH/883S ( Note 1) -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead SBDIP

HS9-306RH/883S ( Note 1) -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1

Spec Number 518526

File Number 3067.1

HS-3XXRH/883S

Ordering Information

(Continued)

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HS1-306RH/Sample (Note 1) +25oC Sample 14 Lead SBDIP

HS9-306RH/Sample (Note 1) +25oC Sample 14 Lead Ceramic Flatpack

HS1-307RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead SBDIP

HS9-307RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack

HS1-307RH/Sample +25oC Sample 14 Lead SBDIP

HS9-307RH/Sample +25oC Sample 14 Lead Ceramic Flatpack

HS1-384RH/883S (Note 1) -55oC to +125oC Intersil /883 Class S Equivalent 16 Lead SBDIP

HS9-384RH/883S (Note 1) -55oC to +125oC Intersil /883 Class S Equivalent 16 Lead Ceramic Flatpack

HS1-384RH/Sample (Note 1) +25oC Sample 16 Lead SBDIP

HS9-384RH/Sample (Note 1) +25oC Sample 16 Lead Ceramic Flatpack

HS1-390RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 16 Lead SBDIP

HS9-390RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 16 Lead Ceramic Flatpack

HS1-390RH/Sample +25oC Sample 16 Lead SBDIP

HS9-390RH/Sample +25oC Sample 16 Lead Ceramic Flatpack

NOTE:

1. Not recommended for new design.

Pinouts

NC

S3
D3
D1
S1

IN1

GND

LOGIC

(Switch States are for Logic “1” Inputs)

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14

TOP VIEW

DUAL DPST
HS-302RH/883S
HS-306RH/883S

1
2
3
4
5
6
7

14

V+

13

S4

12

D4

11

D2

10

S2

9

IN2

8

V-

GND

SWITCH

1 - 4

0 OFF
1ON

DUAL SPDT
HS-303RH/883S
HS-307RH/883S

1

NC

2

S3

3

D3

4

D1

5

S1

6

IN1

7

SW1

LOGIC

SW2

0 OFF ON
1 ON OFF

14
13
12
11
10

9
8

SW3
SW4

V+
S4
D4
D2
S2
IN2

V-

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16

DUAL DPST

HS-384RH/883S

D1

NC

D3
S3
S4
D4

NC

D2

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

SWITCH

LOGIC

1 - 4

0 OFF
1ON

TOP VIEW

S1
IN1
V­GND
NC
V+
IN2
S2

DUAL SPDT

HS-390RH/883S

1

D1

2

NC

3

D3

4

S3

5

S4

6

D4

7

NC

8

D2

SW1

LOGIC

SW2

0 OFF ON
1 ON OFF

16
15
14
13
12
11
10

9

S1
IN1
V­GND
NC
V+
IN2
S2

SW3
SW4

Spec Number 518526

2

HS-3XXRH/883S

Pinouts

NC

S3
D3
D1
S1

IN1

GND

(Switch States are for Logic “1” Inputs) (Continued)

14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDIP3-F14

DUAL DPST
HS-302RH/883S
HS-306RH/883S

1
2
3
4
5
6
7

14
13

12
11
10
9
8

V+
S4
D4
D2
S2
IN2
V-

LOGIC SWITCH 1 - 4

0 OFF

1ON

TOP VIEW

DUAL SPDT
HS-303RH/883S
HS-307RH/883S

NC

S3
D3
D1
S1

IN1

GND

1
2
3
4
5
6
7

14
13

12
11
10
9
8

LOGIC SW1 AND SW2 SW3 AND SW4

0 OFF ON

1 ON OFF

V+
S4
D4
D2
S2
IN2
V-

D1

NC

D3
S3
S4
D4

NC

D2

16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK)

DUAL DPST

HS-384RH/883S

116
2
3
4
5
6
7
8

15
14
13
12
11
10
9

LOGIC SWITCH 1 - 4

0 OFF

1ON

MIL-STD-1835 CDIP4-F16

TOP VIEW

S1
IN1
V­GND
NC
V+
IN2
S2

D1

NC

D3
S3
S4
D4

NC

D2

DUAL SPDT
HS-390RH/883S

116
2
3
4
5
6
7
8

15
14
13
12
11
10
9

S1
IN1
V­GND
NC
V+
IN2
S2

LOGIC SW1 AND SW2 SW3 AND SW4

0 OFF ON

1 ON OFF

Spec Number 518526

3

Specifications HS-3XXRH/883S

Absolute Maximum Ratings Reliability Information

Supply Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . +44V

+VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22V

-VSUPPLY to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-22V

Analog Input Overvoltages:

+VS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +VSUPPLY +1.5V

-VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY - 1.5V

Digital Input Overvoltage:

+VA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+VSUPPLY +4V

-VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY -4V

Peak Current, S or D Pulsed at 1ms, 10% Duty Cycle Max. . .40mA

Continuous Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10mA

Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC

Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

Lead Temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . .≤ +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Supply Voltage (± VSupply) . . . . . . . . . . . . . . . . . . . . . ±15V Operating Temperature Range . . . . . . . . . . . . . . . .-55oC to +125oC

TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V

PARAMETER SYMBOL CONDITIONS

Thermal Resistance θ

14 Lead SBDIP Package. . . . . . . . . . . . . 70oC/W 19oC/W

14 Lead Ceramic Flatpack Package . . . . 105oC/W 17oC/W

16 Lead SBDIP Package. . . . . . . . . . . . . 70oC/W 19oC/W

16 Lead Ceramic Flatpack Package . . . . 105oC/W 17oC/W

Maximum Package Power Dissipation at +125oC Ambient

14 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W

14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . 0.48W

16 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W

16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . .0.48

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

14 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . .14.3mW/oC

14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/oC

16 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . .14.3mW/oC

16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/oC

GROUP A

SUB-

GROUPS TEMPERATURE

JA

LIMITS

θ

JC

UNITSMIN MAX

“Switch On” Resistance +RDS VD = 10V, IS = -10mA,

S1/S2/S3/S4

-RDS VD = -10V, IS = 10mA,
S1/S2/S3/S4

Leakage Current Into
the Source Terminal of
an “Off” Switch

Leakage Current into
theDrainTerminalofan
“Off” Switch

Leakage Current from
an “On” Driver Into the
Switch (Drain&Source)

Low Level Input
Address Current

+IS(OFF) VS = +14V, VD = -14V,

S1/S2/S3/S4

-IS(OFF) VS = -14V, VD = +14V,
S1/S2/S3/S4

+ID(OFF) VS = -14V, VD = +14V,

S1/S2/S3/S4

-ID(OFF) VS = +14V, VD = -14V,
S1/S2/S3/S4

+ID(ON) VS = VD = +14V,

S1/S2/S3/S4

-ID(ON) VS = VD = -14V,
S1/S2/S3/S4

IAL All Channels VA = 0.8V 1 +25oC-11µA

1 +25oC-50Ω

2, 3 -55oC to +125oC-75Ω

1 +25oC-50Ω

2, 3 -55oC to +125oC-75Ω

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

2, 3 -55oC to +125oC-11 µA

High Level Input
Address Current

IAH All Channels VA = 4.0V 1 +25oC-11µA

2, 3 -55oC to +125oC-11 µA

Spec Number 518526

4

Specifications HS-3XXRH/883S

TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V (Continued)

GROUP A

SUB-

PARAMETER SYMBOL CONDITIONS

Positive Supply Current I(+) All Channels VA = 0.8V 1 +25oC-10µA

GROUPS TEMPERATURE

2, 3 -55oC to +125oC - 100 µA

LIMITS

UNITSMIN MAX

VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V

Negative Supply
Current

TABLE 1. HS-306RH/307RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V

PARAMETER SYMBOL CONDITIONS

“Switch On” Resistance +RDS VD = 10V, IS = -10mA,

Leakage Current Into
the Source Terminal of
an “Off” Switch

I(-) All Channels VA = 0.8V 1 +25oC -10 - µA

VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V

S1/S2/S3/S4

+RDS VD = -10V, IS = 10mA,

S1/S2/S3/S4

+IS(OFF) VS = +14V, VD = -14V,

S1/S2/S3/S4

1 +25oC - 0.5 mA

2, 3 -55oC to +125oC-1mA

2, 3 -55oC to +125oC -100 - µA

1 +25oC -10 - µA

2, 3 -55oC to +125oC -100 - µA

GROUP A

SUB-

GROUPS TEMPERATURE

1 +25oC-50Ω

2, 3 -55oC to +125oC-75Ω

1 +25oC-50Ω

2, 3 -55oC to +125oC-75Ω

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

LIMITS

UNITSMIN MAX

Leakage Current into
theDrainTerminalofan
“Off” Switch

Leakage Current from
an “On” Driver Into the
Switch (Drain and
Source)

Low Level Input
Address Current

High Level Input
Address Current

-IS(OFF) VS = -14V, VD = +14V,
S1/S2/S3/S4

+ID(OFF) VS = -14V, VD = +14V,

S1/S2/S3/S4

-ID(OFF) VS = +14V, VD = -14V,
S1/S2/S3/S4

+ID(ON) VS = VD = +14V,

S1/S2/S3/S4

-ID(ON) VS = VD = -14V,
S1/S2/S3/S4

IAL All Channels VA = 3.5V 1 +25oC-11µA

IAH All Channels VA = 11V 1 +25oC-11µA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1 +25oC-22nA

2, 3 -55oC to +125oC -100 100 nA

1, 2 -55oC to +125oC-11 µA

1, 2 -55oC to +125oC-11 µA

Spec Number 518526

5

Specifications HS-3XXRH/883S

TABLE 1. HS-306RH/307RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V (Continued)

GROUP A

SUB-

PARAMETER SYMBOL CONDITIONS

Positive Supply Current I(+) All Channels VA = 0V 1 +25oC-10µA

All Channels VA = 15V 1 +25oC-10µA

Negative Supply
Current

TABLE 2. HS-302RH/303RH/384RH/390RH/883S AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V

PARAMETER SYMBOL CONDITIONS

Break-Before-Make
TimeDelay(HS-303RH
& 390RH Only)

I(-) All Channels VA = 0V 1 +25oC -10 - µA

All Channels VA = 15V 1 +25oC -10 - µA

TOPEN RL = 300Ω, VS = +3V,

VAH = 5V

GROUPS TEMPERATURE

2, 3 -55oC to +125oC - 100 µA

2, 3 -55oC to +125oC - 100 µA

2, 3 -55oC to +125oC -100 - µA

2, 3 -55oC to +125oC -100 - µA

GROUP A

SUB-

GROUPS TEMPERATURE

9 +25oC 30 150 ns

10, 11 -55oC to +125oC - 300 ns

LIMITS

LIMITS

UNITSMIN MAX

UNITSMIN MAX

Switch Turn “On” Time TON RL = 300Ω, VS = +3V 9 +25oC - 300 ns

10, 11 -55oC to +125oC - 500 ns

Switch Turn “Off” Time TOFF RL = 300Ω, VS = +3V 9 +25oC - 250 ns

10, 11 -55oC to +125oC - 450 ns

TABLE 2. HS-306RH/307RH/883S AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V

GROUP A

SUB-

PARAMETER SYMBOL CONDITIONS

Break-Before-Make
TimeDelay(HS-307RH
Only)

Switch Turn “On” Time TON RL = 300Ω, VS = +3V 9 +25oC - 300 ns

Switch Turn “Off” Time TOFF RL = 300Ω, VS = +3V 9 +25oC - 250 ns

TOPEN RL = 300Ω, VS = +3V 9 +25oC 30 150 ns

GROUPS TEMPERATURE

10, 11 -55oC to +125oC - 300 ns

10, 11 -55oC to +125oC - 500 ns

10, 11 -55oC to +125oC - 450 ns

LIMITS

UNITSMIN MAX

Spec Number 518526

6

Specifications HS-3XXRH/883S

TABLE 3. HS-302RH/303RH/306RH/307RH/384RH/390RH/883S

ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1)

Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V

HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V

(NOTE 1)

PARAMETER SYMBOL

Switch Input Capacitance CIS(OFF) Measured Source to GND +25oC - 28 pF
Driver Input Capacitance CC1 VA = 0V +25oC - 10 pF

CC2 VA = 15V +25oC - 10 pF
Switch Output COS Measured Drain to GND +25oC - 28 pF
Off Isolation VISO VGEN = 1Vp-p, f = 1MHz +25oC40-dB
Crosstalk VCR VGEN = 1Vp-p, f = 1MHz +25oC40-dB
Charge Transfer VCTE VS = GND, CL = 0.01µF +25oC - 15 mV
NOTE:1. Parameterslisted in Table 3are controlled viadesignor processparametersand arenotdirectly tested atfinalproduction. These

parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by
characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.

TABLE 4. HS-302RH/303RH/384RH/390RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS

Tested Per Mil-Std-883. Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V

CONDITIONS TEMPERATURE

LIMITS

UNITSMIN MAX

LIMITS

PARAMETER SYMBOL CONDITIONS TEMPERATURE

“Switch On” Resistance +RDS VD = 10V, IS = -10mA, S1/S2/S3/S4 +25oC-60Ω

-RDS VD = -10V, IS = 10mA, S1/S2/S3/S4 +25oC-60Ω

Leakage Current Into the
Source Terminal of an “Off”
Switch

LeakageCurrentinto theDrain
Terminal of an “Off” Switch

Leakage Current from an “On”
Driver Into the Switch(Drain&
Source)

Positive Supply Current I(+) All Channels VA = 0.8V +25oC - 100 µA

Negative Supply Current I(-) All Channels VA = 0.8V +25oC -100 - µA

High Level Address Current IAH All Channels High +25oC-1+1µA
Low Level Address Current IAL All Channels Low +25oC-1+1µA
Break-Before-Make Time

Delay (HS-303RH/883S and
HS390RH/883S Only)

Switch Turn-On Time TON RL = 300Ω, VS = +3V, (Note 2) +25oC - 500 ns
Switch Turn-Off Time TOFF RL = 300Ω, VS = +3V , (Note 2) +25oC - 450 ns

NOTES:

1. VAL = 0V; VAH = 5.0V

2. VAL = 0V; VAH = 4.0

+IS(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA

-IS(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA

+ID(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA

-ID(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA

-ID(ON) VS = VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA

-ID(ON) VS = VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA

VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V

VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V

TOPEN RL = 300Ω, VS = +3V, (Note 1) +25oC 2 300 ns

+25oC-1mA

+25oC -100 - µA

UNITSMIN MAX

Spec Number 518526

7

Specifications HS-3XXRH/883S

TABLE 4. HS-306/307RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS

Tested Per Mil-Std-883. Unless Otherwise Specified: HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V

LIMITS

PARAMETER SYMBOL CONDITIONS TEMPERATURE

“Switch On” Resistance +RDS VD = 10V, IS = -10mA, S1/S2/S3/S4 +25oC-60Ω

-RDS VD = -10V, IS = 10mA, S1/S2/S3/S4 +25oC-60Ω

Leakage Current Into the
Source Terminal of an “Off”
Switch

LeakageCurrentinto theDrain
Terminal of an “Off” Switch

Leakage Current from an “On”
Driver Into the Switch(Drain&
Source)

Positive Supply Current I(+) All Channels VA = 0V +25oC - 100 µA

Negative Supply Current I(-) All Channels VA = 0V +25oC -100 - µA

High Level Address Current IAH All Channels High +25oC-1+1µA
Low Level Address Current IAL All Channels Low +25oC-1+1µA
Break-Before-Make Time

Delay (HS-307RH/883S Only)
Switch Turn-On Time TON RL = 300Ω, VS = +3V, (Note 1) +25oC - 500 ns
Switch Turn-Off Time TOFF RL = 300Ω, VS = +3V, (Note 1) +25oC - 450 ns

NOTE: 1. VAL = 0V; VAH = 15V

+IS(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA

-IS(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA

+ID(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA

-ID(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA

-ID(ON) VS = VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA

-ID(ON) VS = VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA

All Channels VA = 15V +25oC-1mA

All Channels VA = 15V +25oC -100 - µA

TOPEN RL = 300Ω, VS = +3V, (Note 1) +25oC 2 300 ns

UNITSMIN MAX

TABLE 5. HS-302RH/303RH/384RH/390RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS

Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V

GROUP A

SUB-

PARAMETER SYMBOL CONDITIONS

“Switch On”
Resistance

Leakage Current
Into the Source
Terminal of an “Off”
Switch

Leakage Current
into the Drain
Terminal of an “Off”
Switch

Leakage Current
from an “On” Driver
Into the Switch
(Drain & Source)

+RDS VD = 10V, IS = -10mA,

S1/S2/S3/S4

-RDS VD = -10V, IS = 10mA,
S1/S2/S3/S4

+IS(OFF) VS = +14V, VD = -14V,

S1/S2/S3/S4

-IS(OFF) VS = -14V, VD = +14V,
S1/S2/S3/S4

+ID(OFF) VS = -14V, VD = +14V,

S1/S2/S3/S4

-ID(OFF) VS = +14V, VD = -14V,
S1/S2/S3/S4

+ID(ON) VS=VD= +14V, S1/S2/S3/S4 1 +25oC-22nA

-ID(ON) VS = VD = -14V, S1/S2/S3/S4 1 +25oC-22nA

GROUPS TEMPERATURE

1 +25oC-55Ω

1 +25oC-55Ω

1 +25oC-22nA

1 +25oC-22nA

1 +25oC-22nA

1 +25oC-22nA

LIMITS

UNITSMIN MAX

Spec Number 518526

8

Specifications HS-3XXRH/883S

TABLE 5. HS-302RH/303RH/384RH/390RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS

Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V (Continued)

PARAMETER SYMBOL CONDITIONS

GROUP A

SUB-

GROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

Low Level Input
Address Current

High Level Input
Address Current

Positive Supply
Current

Negative Supply
Current

TABLE 5. HS-306RH/307RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS

Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V

PARAMETER SYMBOL CONDITIONS

“Switch On” Resistance +RDS VD = 10V, IS = -10mA,

Leakage Current Into the
Source Terminal of an
“Off” Switch

IAL All Channels VA = 0.8V 1 +25oC -100 100 nA

IAH All Channels VA = 4.0V 1 +25oC -100 100 nA

I(+) All Channels VA = 0.8V 1 +25oC-11µA

VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V

I(-) All Channels VA = 0.8V 1 +25oC-11µA

VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V

S1/S2/S3/S4

-RDS VD = -10V, IS = 10mA,
S1/S2/S3/S4

+IS(OFF) VS = +14V, VD = -14V,

S1/S2/S3/S4

-IS(OFF) VS = -14V, VD = +14V,
S1/S2/S3/S4

1 +25oC -0.1 0.1 mA

1 +25oC-11µA

GROUP A

SUBGROUPS TEMPERATURE

1 +25oC-55Ω

1 +25oC-55Ω

1 +25oC-22nA

1 +25oC-22nA

LIMITS

UNITSMIN MAX

Leakage Current into the
Drain Terminal of an “Off”
Switch

Leakage Current from an
“On” Driver Into the Switch
(Drain & Source)

Low Level Input Address
Current

High Level Input Address
Current

Positive Supply Current I(+) All Channels VA = 0V 1 +25oC-11µA

Negative Supply Current I(-) All Channels VA = 0V 1 +25oC-11µA

+ID(OFF) VS = -14V, VD = +14V,

S1/S2/S3/S4

-ID(OFF) VS = +14V, VD = -14V,
S1/S2/S3/S4

+ID(ON) VS = VD = +14V, S1/S2/S3/S4 1 +25oC-22nA

-ID(ON) VS = VD = -14V, S1/S2/S3/S4 1 +25oC-22nA

IAL All Channels VA = 3.5V 1 +25oC -100 100 nA

IAH All Channels VA = 11V 1 +25oC -100 100 nA

All Channels VA = 15V 1 +25oC-11µA

All Channels VA = 15V 1 +25oC-11µA

1 +25oC-22nA

1 +25oC-22nA

Spec Number 518526

9

Specifications HS-3XXRH/883S

TABLE 6. APPLICABLE SUBGROUPS

GROUP A SUBGROUPS

CONFORMANCE GROUPS METHOD

Initial Test 100%/5004 1, 7, 9 1, (Note 2)
Interim Test 100%/5004 1, 7, 9, Deltas 1, Deltas, (Note 2)
PDA 100%/5004 1, 7, Deltas
Final Test 100%/5004 2, 3, 8A, 8B, 10, 11
Group A (Note 1) Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 2, 3, Deltas, (Note 2)

Subgroup B-6 Sample/5005 1, 7, 9
Group D Sample/5005 1, 7, 9
Group E, Subgroup 2 Sample/5005 1, 7

NOTES:

1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.

2. Table 5 parameters on.y.

TESTED RECORDED

10

Spec Number 518526

HS-302RH/303RH/306RH/307RH/384RH/390RH/883S

Intersil Space Level Product Flow

Wafer Lot Acceptance (All Lots) Method 5007

(Includes SEM)

GAMMA Radiation Verification (Each Wafer) Method 1019,

4 Samples/Wafer, 0 Rejects
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Temperature Cycle, Method 1010, Condition C,

10 Cycles
100% Constant Acceleration, Method 2001, Condition per

Method 5004
100% PIND, Method 2020, Condition A
100% External Visual
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 72hrs. min.,

NOTES:

1. Failures from subgroup 1, 7 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the

2. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.

3. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.

4. Data Package Contents:

o

+125

C min.

failures from subgroup 7.

• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quan­tity).

• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.

• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.

• X-Ray report and film. Includes penetrometer measurements.

• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).

• Lot Serial Number Sheet (Good units serial number and lot number).

• Variables Data (All Delta operations). Data is identified by serial number.Data header includes lot number and date of test. (See Table6)

• Group B and D attributes and/or Generic data.

• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.

100% Interim Electrical Test (T1)
100% Delta Calculation (T0-T1)
100% PDA, Method 5004 (Note 1)
100% Dynamic Burn-In, Condition D, 240 hrs., +125

Equivalent, Method 1015
100% Interim Electrical Test (T2)
100% Delta Calculation (T0-T2)
100% PDA, Method 5004 (Note 1)
100% Final Electrical Test
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 2)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 3)
Sample - Group B, Method 5005
Sample - Group D, Method 5005
100% Data Package Generation (Note 4)

o

Cor

11

Spec Number 518526

Irradiation Circuits

HS-302RH/303RH/306RH/307RH/384RH/390RH/883S

NC

1

R1

S3

2

R2

D3

3

R3

D1

4

R4 R5

S1

5

IN1

6

GND

7

V+

14

R8

S4

13

R7

D4

12

R6

D2

11

S2

10

IN2

9

V-

8

HS-302RH/303RH/883S
HS-384RH/390RH/883S

NOTES:

1. R1 - R8 = 10kΩ± 5%, 1/4W

2. V1 = +15V ± 10%

3. V2 = -15V ± 10%

4. V3 = +5V ± 10%

5. All irradiation testing is performed in the 14 pin package.

V1

V3

V2

NC

1

R1

S3

2

R2

D3

3

R3

D1

4

R4 R5

S1

5

IN1

6

GND

7

14

13

12

11

10

9

8

HS-306RH/307RH/883S

NOTES:

1. R1 - R8 = 10kΩ± 5%, 1/4W

2. V1 = +15V ± 10%

3. V2 = -15V ± 10%

4. V3 = +12V ± 10%

5. All irradiation testing is performed in the 14 pin package.

V+

S4

D4

D2

S2

IN2

V-

V1

R8

R7

R6

V3

V2

Burn-In Circuits

V-VA V+

NC

1

2

R

3

R

4

5

6

7

14

13

12

11

10

9

8

C

R

R

STATIC CONFIGURATION

HS-302RH/303RH/306RH/307RH/883S

NOTES:

1. R = 10KΩ± 5%, 1/4W (4 per position)

2. C = 0.01µF minimum (per position) or 0.1µF minimum per row

3. D = IN4002 (or equivalent)

4. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V

5. VA = +15.5V ± 0.5V for 306RH/307RH

6. VA = +5.5V ± 0.5V for 302RH/303RH

V+

D

C

D

R

R

R

R

V-

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

D

D

VA

-V

C

C

+V

STATIC CONFIGURATION

HS-384RH/390RH/883S

NOTES:

1. R = 10KΩ± 5%, 1/4W (4 per position)

2. C = 0.01µF minimum (per position) or 0.1µF minimum per row

3. D = IN4002 (or equivalent)

4. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V

5. VA = +5.5V ± 0.5V

12

Spec Number 518526

HS-302RH/303RH/306RH/307RH/384RH/390RH/883S

Burn-In Circuits

V-FV+

NC

R

R

NOTES:

1. R = 10KΩ± 5%, 1/4W (4 per position)

2. C = 0.01µF minimum (per position) or 0.1µF minimum per row

3. D = IN4002 (or equivalent)

4. F = 100kHz square wave, 50% duty cycle,
VL = 0.8V max., VH = 5.5V ± 0.5V

5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V

(Continued)

1

2

3

4

5

6

7

14

13

R

12

R

11

10

9

8

DYNAMIC CONFIGURATION

HS-302RH/303RH/883S

V-FV+

1

C

V+

D

C

V-

D

NC

2

R

3

R

4

5

6

7

14

13

12

11

10

9

8

DYNAMIC CONFIGURATION

HS-306RH/307RH/883S

NOTES:

1. R = 10KΩ± 5%, 1/4W (4 per position)

2. C = 0.01µF minimum (per position) or 0.1µF minimum per row

3. D = IN4002 (or equivalent)

4. F = 100kHz square wave, 50% duty cycle,
VL = 0.8V max., VH = 14V ± 1V

5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V

C

R

R

V+

D

C

V-

D

R

R

R

R

1
2
3
4
5
6
7
8

DYNAMIC CONFIGURATION

HS-384RH/390RH/883S

NOTES:

1. R = 10KΩ± 5%, 1/4W (4 per position)

2. C = 0.01µF minimum (per position) or 0.1µF minimum per row

3. D = IN4002 (or equivalent)

4. F = 100kHz square wave, 50% duty cycle,
VL = 0.8V max., VH = +5.5V ±0.5V

5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V

13

16
15
14
13
12
11
10

9

D

D

F

-V

C

C

+V

Spec Number 518526

Test Circuits

HS-302RH/303RH/306RH/307RH/384RH/390RH/883S

SWITCH TYPE VINH

HS-302RH/303RH/384RH/390RH/883S 4V
HS-306RH/307RH/883S 15V

VS = +3V

LOGIC

INPUT

VS1 = +3V
VS2 = +3V

LOGIC

INPUT

GND

GND

V+
+15V

VO

SWITCH
OUTPUT

SWITCH OUTPUT

V-

-15V

RL

300Ω

FIGURE 1. SWITCHING TEST CIRCUIT (tON, tOFF)

SWITCH TYPE VINH

HS-303RH/390RH/883S 5V
HS-307RH/883S 15V

V+
+15V

V-

-15V

D1
D2

RL2

RL1

OUT 1
OUT 2

SWITCH OUTPUT

LOGIC INPUT

0V

VS

0V

LOGIC INPUT

LOGIC “1” = SWITCH ON

VINH

50% 50%

90%

tON

LOGIC “1” =
SWITCH ON

VINH

0V

0V
0V

50%

tBBM tBBM

tOFF

RL1 = RL2 = 300Ω

50%50%

10%

50%

OUT 1
OUT 2

VBVA

±10V

RON =

VB - VA

± 10mA

±

FIGURE 3. ON RESISTANCE TEST

CIRCUIT (RON)

FIGURE 2. BREAK-BEFORE-MAKE TEST CIRCUIT (tBBM)

SD

10mA

ID(ON)

A

±14V

FIGURE 4. ON LEAKAGE CURRENT

TEST CIRCUIT (IDON)

14

ID(OFF)

A

±

14V

SD

IS(OFF)

A

±14V

FIGURE 5. OFF LEAKAGE CURRENT

TEST CIRCUIT (ISOFF,
IDOFF)

Spec Number 518526

HS-302RH/303RH/306RH/307RH/384RH/390RH/883S

Metallization Topology

DIE DIMENSIONS:

Die Size: 2130 x 1930µm
Die Thickness: 11 ±1 mils

METALLIZATION:

Type: Al, 12.5k

Å ± 2kÅ

Back: Gold

GLASSIVATION:

Type: SiO

2

Thickness: 8kű 1kÅ

Metallization Mask Layout

WORST CASE CURRENT DENSITY: 1.732e05 A/cm
SUBSTRATE POTENTIAL: Unbiased
PROCESS: DI Linear Metal Gate CMOS

HS-302RH/303RH/306RH/307RH/883S

V+

S3

S4

2

S3

D3

D1

S1

IN1

NC

HS-384RH/390RH/883S

D3

D1

GND

D4

D2

S2

IN2

V-

S1

IN1

V-

S4

D4

D2

15

S2

GND

V+

IN2

Spec Number 518526

HS-302RH/303RH/306RH/307RH/384RH/390RH/883S

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Office Headquarters

NORTH AMERICA

Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
FAX: [phone]

EUROPE

Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
FAX: [phone]

ASIA

Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: [phone]
FAX: [phone]

Spec Number

16