Page 1
HRU0302A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-235G(Z)
Rev 7
Jul. 1998
Features
• Low forward voltage drop and suitable for high effifiency rectifying.
• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HRU0302A Z URP
Outline
Cathode mark
Mark
12
Z
1. Cathode
2. Anode
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HRU0302A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
*1
V
RRM
voltage
Average rectified current I
Non-Repetitive peak
*1
O
*2
I
FSM
forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Notes 1. See from Fig.4 to Fig.6
Notes 2. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Capacitance C — 70 — pF VR = 0V, f = 1 MHz
Thermal resistance R
th(j-a)
Notes 1. Polyimide board
— — 0.40 V IF = 300 mA
— — 100 µAVR = 20V
— 440 — °C/W Polyimide board
20 V
300 mA
3A
*1
3.0
1.5
1.5
20hx15wx0.8t
0.8
Unit: mm
2
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Main Characteristic
HRU0302A
10
Pulse test
1.0
Ta=75°C
(A)
F
-1
10
10
-2
Ta=25°C
Forward current I
-3
10
-4
10
0 0.2 0.4
Forward voltage V
0.6 0.8
F
Fig.1 Forward current Vs. Forward voltage
2
10
f=1MHz
Pulse test
(V)
1.0
-1
10
Pulse test
-2
10
(A)
R
-3
10
Ta=75°C
-4
10
Reverse current I
-5
10
-6
10
Ta=25°C
0510
15 20
Reverse voltage V R (V)
Fig.2 Reverse current Vs. Reverse voltage
25
10
Capacitance C (pF)
1.0
1.0
Reverse voltage V R (V)
Fig.3 Capacitance Vs. Reverse voltage
4010
3
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HRU0302A
Main Characteristic
0.25
(W)
d
0A
0.20
Tj =25°C
0.15
0.10
0.05
Forward power dissipation P
0
0
0.05
Forward current
Fig4. F
orward power dissipation Vs. Forward current
0.40
VR=V
RRM
(A)
@Io
Tj =125°C
Rth(j-a)=450°C/W
0.30
D=1/6
0.20
t
T
0.10
/2
D=
0.20
0V
D=1/6
t
\
T
D=1/3
Sin(˘=180°)
D=1/2
DC
(W)
d
0.15
0.10
T
Tj =125°C
t
t
D=
\
T
D=5/6
D=2/3
D=1/2
Sin(
˘=
180°)
0.05
Reverse power dissipation P
0.200.15
@@
0.25
I
F
@(A)
0.30
010
Reverse voltage
Fig5.
Reverse power dissipation Vs. Reverse voltage
@@
V
20515
@(V)
R
25
0
DC
D=1/2
Sin(˘=180°)
D=1/3
0.10
Average rectified current
0
0
050
-25
10025 75
Ambient temperature Ta ( °C)
Fig.6 Average rectified current Vs. Ambient temperature
4
125
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Package Dimensions
1
Cathode Mark
Z
2
1.7±0.15
2.5±0.15
HRU0302A
Unit : mm
1.25±0.15
0.3±0.150.9±0.15
1. Cathode
2. Anode
0.10
‘
0
Hitachi Code
JEDECCode
EIAJCode
Weight(g)
URP
—
—
0.004
5
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HRU0302A
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
6
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