HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6343
Issued Date : 1993.03.24
Revised Date : 2001.05.01
Page No. : 1/4
HMPSA13
NPN SILICON DARLINGTON TRANSISTOR
Description
The HMPSA13 is designed for applications requiring extremely high
current gain at collector to 500mA.
Features
High D.C. Current Gain
•
Complementary to HMPSA63
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 600 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current....................................................................................................... 500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 30 - - V IC=100uA, IE=0
BVCES 30 - - V IC=100uA, VBE=0
BVEBO 10 - - V IE=10uA, IC=0
ICBO - - 100 nA VCB=30V, IE=0
IEBO - - 100 nA VEB=10V, IC=0
*VCE(sat)1 - - 1.5 V IC=100mA, IB=0.1mA
*VCE(sat)2 - 1.0 - V IC=500mA, IB=0.5mA
*hFE1 5 - - K VCE =5V, IC=10mA
*hFE2 10 - - K VCE=5V, IC=100mA
*hFE3 - 50 - K VCE=5V, IC=500mA
fT 125 - - MHz VCE=5V, IC=10mA, f=100MHz
Cob - - 6 pF VCB=10V, f=1MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE3
Rank VCE(sat)2 hFE3
SUN
N VCE(sat)2 hFE3
HMPSA13 HSMC Product Specification
1.2V
<
20K
>
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6343
Issued Date : 1993.03.24
Revised Date : 2001.05.01
Page No. : 2/4
1000k
100k
hFE
10k
0.1 1 10 100 1000
Current Gain & Collector Current
hFE @ VCE=5V
Collector Current (mA)
On Voltage & Coll ector Current
10000
10000
1000
Satu r ation Vol tage (m V)
100
1 10 100 1000
BE(sat)
V
@ IC=1000I
CE(sat)
V
@ IC=1000I
Collector Current (mA)
B
B
Capa citance & Rev erse-Bi ased Volt age
10
Saturation Voltage & Collector Current
1000
On Voltage ( m V)
100
0.1 1 10 100 1000
Collector Current (mA)
BE(on)
V
@ VCE=5V
Cutoff Frequency & Collector Current
1000
VCE=5V
100
Cutoff Frequency (MHz)
Capac itance (pF)
1
1 10 100
Reverse- Biased Voltage ( V)
Cob
Safe Operating Area
1000
PT=1s
(mA)
100
C
10
Collector Current-I
PT=100ms
PT=1ms
10
1 10 100 1000
Collector Curren t ( mA)
1
1 10 100
Forwar d Voltage- VCE (V)
HMPSA13 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6343
Issued Date : 1993.03.24
Revised Date : 2001.05.01
Page No. : 3/4
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
0
0 20 40 60 80 100 120 140 160
Ambient Tem p er at ure- Ta(oC)
PD-Ta
HMPSA13 HSMC Product Specification
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6343
Issued Date : 1993.03.24
Revised Date : 2001.05.01
Page No. : 4/4
α
2
Marking :
B
C
HSMC Logo
31
2
α
3
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Base 3.Collec tor
Product Series
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H C 0.5000 - 12.70 - I D 0.0142 0.0220 0.36 0.56
E-*0.0500 -
1.27
*
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your l ocal HSMC sales office.
1
α
2
α
3
α
-
-
-
0.1000 -
*
0.0500 -
*
5
°
*
2
°
*
2
°
*
-
-
-
*:Typical
2.54
*
1.27
*
5
°
*
2
°
*
2
°
*
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
HMPSA13 HSMC Product Specification
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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