HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6326-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 1/4
HMPS651
NPN SILICON TRANSISTOR
Description
Amplifier transistor
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 80 V
VCEO Collector to Emitter Voltage ..................................................................................... 60 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current.............................................................................................................. 2 A
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=10mA, IB=0
BVCEO 60 - - V IC=100uA, IE=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 0.1 uA VCB=80V, IE=0
IEBO - - 0.1 uA VEB=4V, IC=0
*VCE(sat)1 - - 0.5 V IC=2A, IB=200mA
*VCE(sat)2 - - 0.3 V IC=1A, IB=100mA
*VBE(sat) - - 1.2 V IC=1A, IB=100mA
VBE(on) - - 1 V IC=1A, VCE=2V
*hFE1 75 - - IC=50mA, VCE=2V
*hFE2 75 - - IC=500mA, VCE=2V
*hFE3 75 - - IC=1A, VCE=2V
*hFE4 40 - - IC=2A, VCE=2V
fT 75 - - MHz IC=50mA, VCE=5V, f=100MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6326-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 2/4
1000
Current Gain & Collector Current
VCE=6V
VCE=2V
100
hFE
10
0.1 1 10 100 1000 10000
10000
Collector Curren t ( mA)
On Vol t age & Coll ect or Current
10000
1000
BE(sat)
V
100
Satu r ation Vol tage (m V)
10
0.1 1 10 100 1000 10000
Collector Curren t ( mA)
@ IC=10I
B
CE(sat)
V
@ IC=10I
Cut o ff Fr equenc y & Collector Current
1000
VCE=5V
Saturation Voltage & Collector Cu rrent
B
1000
BE(on)
V
On Voltage (mV)
100
10 100 1000 10000
@ VCE=2V
Collector Curren t ( mA)
Capa citance & Rev erse-Bi ased Voltage
100
10
Capac itance (pF)
Cob
100
Cutoff Frequency (MHz)
10
1 10 100 1000
Collector Curren t ( mA)
Safe Operating Area
100000
10000
(mA)
C
Collector Curren t- I
1000
100
PT=1ms
PT=100ms
PT=1s
10
1
0.1 1 10 100 1000
Reverse Biased Vol tage (V)
1
1 10 100
Forwar d Vol tage- VCE ( V )
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6326-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 3/4
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
0
0 20 40 60 80 100 120 140 160
Ambient Tem p er at ure- Ta(oC)
PD-Ta
HSMC Product Specification
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-92 Dimension
A
Spec. No. : HE6326-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 4/4
α
2
Marking :
C
B
31
2
α
3
HSMC Logo
Part Number
Date Code
HSMC Logo
D
Part Number
H
α
I
1
G
Style : Pin 1.Emitter 2.Base 3.Collec tor
Product Series
Rank
Laser Mark
Product Series
Ink Mark
E
DIM
F
Inches Millimeters Inches M illimeters
Min. Max. Min. Max.
3-Lead TO-92 Plastic Package
HSMC Packa
e Code : A
DIM
Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56
E - *0.0500 - *1.27
F 0.1323 0.1480 3.36 3.76
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
1
α
2
α
3
α
-
-
-
*5
*2
*2
°
°
°
-
-
-
*:Typical
*5
°
*2
°
*2
°
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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