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HMMC-2007
Datasheet (HP)
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Datasheet HMMC-2007 Datasheet (HP)

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Page 1
DC – 8 GHz Terminated SPDT Switch
Technical Data

Features

• Outputs Terminated in 50 Ω
When Off
• Insertion Loss:
1.2 dB @ 8␣ GHz
• Isolation:
>70 dB @ 45 MHz >35 dB @ 8 GHz
• Return Loss:
25 dB (Both Input and Selected Output) 18 dB Unselected Output
• Switching Speed:
<20 µs (10%-90% RF)
•P
• Harmonics (DC Coupled):

Description

The HMMC-2007 is a GaAs mono­lithic microwave integrated circuit (MMIC) designed for low insertion loss and high isolation from DC to 8 GHz. It is intended for use as a general-purpose, single-pole, double-throw (SPDT), absorptive switch. Two series and two shunt MESFETs per throw provide
1.4␣ dB maximum insertion loss and 38 dB typical isolation at 6␣ GHz. HMMC-2007 chips use through-substrate vias to provide ground connections to the chip backside and minimize the number of wire bonds required.
: 27 dBm
-1dB
<-80 dBc @ 10 dBm
Chip Size: 660 x 960 µm (25.9 x 37.8 mils) Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 120 x 120 µm (4.7 x 4.7 mils)

Absolute Maximum Ratings

Symbol Parameters/Conditions Units Min. Max.
V
sel
P
in
T
op
T
STG
T
max
P
unsel
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. T
Select Voltages 1 and 2 V -10.5 +10.5
RF Input Power dBm 27
Operating Temperature °C -5 5 +125 Storage Temperature °C -6 5 +165 Maximum Assembly Temp. °C +200
Power into Unselected Output dBm 27
HMMC-2007
[1]
= 25°C except for T
A
, T
STG
, and T
op
max
.
5965-5451E
7-26
Page 2
DC Specifications/Physical Properties, T
= 25°C
A
Symbol Parameters and Test Conditions Units Min. Typ. Max.
I
SEL - 10V
I
SEL +10 V
V
p
BV
gss
RF Specifications, T
Leakage Current @ -10 V µA 200 Leakage Current @ +10 V µA20
Pinch-Off Voltage (V I
= 4 mA, V
RFout2
V
RFin
= GND
SEL1
Breakdown Voltage (Test FET w/VD = VS = GND, I
= -50 µA)
G
= 25°C, ZO = 50 Ω, V
A
= Vp, V
SEL2
= -10 V, V
= +2 V,
RFout2
= open circuit, V -6.75 -3.00
RFout1
V -13.0
sel-high
= +10 V, V
sel-low
= -10 V
Symbol Parameters and Test Conditions Units Min. Typ. Max.
BW Guaranteed Operating Bandwidth GHz DC 8.0
IL
ISO Isolation, RFin to Unselected RF
RL
in
RL
out-ON
RL
out-OFF
P
1 dB
t
s
Insertion Loss, RFin to Selected RF
, f = 6 GHz, OFF throw
out
, f = 6 GHz, OFF throw dB 38
out
d B 1.1 1.4
Input Return Loss @ 6 GHz dB 25
Output Return Loss, ON throw @ 6 GHz dB 25
Output Return Loss, OFF throw @ 6 GHz dB 18
Input Power where IL increases by 1 dB fin = 2 GHz dBm 27
Switching Speed, 10% –90% RF Envelope f
= 2 GHz µs20
in
7-27
Page 3

Applications

The HMMC-2007 can be used in instrumentation, communica­tions, radar, ECM, EW, and many other systems requiring SPDT switching. It can be used for pulse modulation, port isolation, transfer switching, high-speed switching, replacement of mechanical switches, and so on.

Assembly Techniques

Die attach should be done with conductive epoxy. Gold thermosonic bonding is recom­mended for all bonds. The top and bottom metallization is gold. For more detailed information see HP application note #999 “GaAs MMIC Assembly and Handling Guidelines.”
GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices.
S-Parameters
Freq. S
[1]
, T
=25°C, ZO = 50 Ω, V
A
11
high = 0 V, V
sel
S
21
sel
S
31
low = -10 V
S
22
S
33
GHz (Insertion Loss) (Isolation) (ON Throw) (OFF Throw)
dB Mag. Ang. dB Mag. Ang. dB dB Mag. Ang. dB Mag. Ang.
0.5 -26.41 0.048 -57.11 -1.08 0.88 -49.06 -67.74 -28.40 0.03 -47.94 -32.26 0.024 47.18
1.0 -27.53 0.042 -113.83 -1.13 0.88 -93.69 -60.55 -24.74 0.05 -117.54 -30.79 0.029 -38.11
1.5 -30.69 0.029 -176.73 -1.18 0.87 -138.08 -56.17 -31.91 0.02 168.76 -30.35 0.030 -64.68
2.0 -32.37 0.024 115.57 -1.21 0.87 177.39 -53.18 -31.31 0.02 119.22 -26.21 0.049 -134.70
2.5 -31.79 0.026 61.35 -1.25 0.87 133.00 -50.38 -28.90 0.03 68.41 -26.38 0.048 151.66
3.0 -30.60 0.030 4.27 -1.30 0.86 88.53 -47.63 -32.95 0.02 -11.68 -25.66 0.052 103.24
3.5 -28.53 0.037 -58.32 -1.33 0.86 44.08 -45.67 -29.26 0.03 -44.21 -22.99 0.071 38.61
4.0 -27.14 0.044 -124.01 -1.34 0.86 -0.53 -44.12 -30.61 0.02 -113.40 -22.41 0.076 -21.25
4.5 -26.46 0.048 172.69 -1.37 0.85 -45.16 -42.68 -32.21 0.02 165.53 -21.68 0.082 -75.25
5.0 -27.03 0.045 107.19 -1.40 0.85 -89.79 -41.45 -36.49 0.01 141.98 -19.88 0.101 -133.81
5.5 -28.64 0.037 32.44 -1.42 0.85 -134.56 -40.28 -34.51 0.01 4.26 -19.89 0.101 167.02
6.0 -29.55 0.033 -59.18 -1.45 0.85 -179.46 -39.16 -32.44 0.02 -100.27 -19.03 0.112 115.49
6.5 -26.88 0.045 -156.32 -1.51 0.84 135.54 -38.12 -27.18 0.04 176.54 -18.28 0.122 56.80
7.0 -23.24 0.069 130.95 -1.56 0.84 90.76 -37.13 -23.83 0.06 122.00 -18.67 0.117 -2.63
7.5 -21.53 0.084 70.91 -1.52 0.84 46.04 -36.36 -21.48 0.08 51.31 -18.61 0.117 -60.32
8.0 -21.21 0.087 15.06 -1.62 0.83 0.47 -35.64 -21.73 0.08 -15.06 -17.65 0.131 -124.25
8.5 -20.92 0.090 -41.26 -1.64 0.83 -44.44 -34.83 -22.22 0.07 -81.88 -16.95 0.142 172.46
9.0 -19.88 0.101 -104.30 -1.66 0.83 -90.23 -34.13 -20.42 0.09 -145.01 -16.07 0.157 115.03
9.5 -18.65 0.117 -175.05 -1.84 0.81 -135.81 -33.62 -18.17 0.12 145.14 -14.94 0.179 59.82
10.0 -17.04 0.141 116.96 -1.90 0.80 179.24 -34.14 -16.31 0.15 85.15 -14.31 0.193 3.39
Note:
1. Three-port-wafer-probed data: Port 1 = RF Input, Port 2 = Selected RF Output (i.e., ON throw), and Port 3 = Unselected RF Output (i.e., OFF throw).
7-28
Page 4
RF
COMMON
RF2
SEL2
Figure 1. HMMC-2007 Schematic.
Recommended Operating Conditions, T
=25°C
A
Select Line RF Path
RF IN to RF IN to
SEL1 SEL2 RF OUT2
+10 V - 1 0 V Isolated Low Loss
-10 V +10 V Low Loss Isolated
SEL1
RF OUT1
RF1
7-29
Page 5

HMMC-2007 Typical Performance

0
-1.0
-2.0
-3.0
INSERTION LOSS (dB)
-4.0
S
21-ON
, S
31-ON
0
-20
-40
-60
ISOLATION (dB)
-80
S
21-OFF
, S
31-OFF
0
-10
-20
-30
-40
INPUT RETURN LOSS (dB)
S
11
-5.0 0510
FREQUENCY (GHz)
Figure 2. Insertion Loss
[1]
vs.
Frequency.
0
-10
-20
-30
-40
OUTPUT RETURN LOSS (dB)
-50 0510
Figure 5. Output Return Loss
S
33
S
FREQUENCY (GHz)
22
[1]
vs.
Frequency.
-100 0510
FREQUENCY (GHz)
Figure 3. Input-to-Output Isolation vs. Frequency.
0
-1
-2
-3
-4
GAIN COMPRESSION (dB)
-5 10 20 302515
POWER INPUT (dBm)
10 MHz
Figure 6. Gain Compression vs. Power Input.
Note:
1. Data taken with the device mounted in modular breadboard package.
1 GHz
-50 0510
FREQUENCY (GHz)
[1]
Figure 4. Input Return Loss
[1]
vs.
Frequency.
7-30
Page 6
563
97
480
863
960
660
97
0
97
0
Figure 6. HMMC-2007 Bonding Pad Locations. (Dimensions in micrometers)
Note: All compression data measured in an individual device mounted in an HP83040 Series Modular Microcircuit Package @ T
case
= 25° C.
97
863
This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifica­tions. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative.
7-31
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