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DC – 6 GHz Unterminated SPDT
Switch
Technical Data
Features
• Frequency Range: DC-6 GHz
• Insertion Loss:
<1dB @ 6 GHz
• Isolation:
>70 dB @ 45 MHz
>35 dB @ 6 GHz
• Return Loss: >12 dB
(Both Input & Output)
• Switching Speed: <1 ns
•P
-1dB
:
23 dBm @ 50 MHz
>27dBm @ 6 GHz
• Harmonics: <-25 dBc @
20␣ dBm (DC coupled)
Description
The HMMC-2006 is a GaAs
monolithic microwave integrated
circuit (MMIC) designed for low
insertion loss and high isolation
from DC to 6 GHz. It is intended
for use as a general-purpose,
singlepole, double-throw (SPDT)
switch. One series and two shunt
MESFETs per throw provide
1.2␣ dB maximum insertion loss
and 35 dB minimum isolation at
6␣ GHz. HMMC-2006 chips use
through-substrate vias to provide
ground connections to the chip
backside and minimize the
number of wire bonds required.
The HMMC-2006 is also available
in an 8-lead flatpack (1GG7-4201).
Chip Size: 960 x 1070 µm (37.8 x 42.1 mils)
Chip Size Tolerance: +0, -10 µm (+0, -0.4 mils)
Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils)
Pad Dimensions: 80 x 80 µm (3.2 x 3.2 mils), or larger
Absolute Maximum Ratings
Symbol Parameters/Conditions Units Min. Max.
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
RF
OUT2
V
sel
P
in
T
op
T
STG
T
max
Select Voltages 1 and 2 V -12 +3
RF Input Power dBm 30
Operating Temperature °C -5 5 +125
Storage Temperature °C -6 5 +165
Maximum Assembly Temp.
(for 60 seconds max.)
= 25° C except for T
A
HMMC-2006
SEL1 SEL2
RF
IN
[1]
RF
OUT1
Chip ID
°C +300
, T
, and T
ch
STG
max
.
5965-9071E
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DC Specifications/Physical Properties, T
= 25°C
A
Symbol Parameters and Test Conditions Units Min. Typ. Max.
I
l
V
p
BV
gss
RF Specifications, T
Leakage Current @ -10 V µA 100
Pinch-off Voltage @ 8 mA V -6.75 -3.25
Breakdown Voltage Total V -18.0 -12.5
= 25°C, ZO = 50 Ω, V
A
high = 0 V, V
sel
low = -10 V
sel
Symbol Parameters and Test Conditions Units Min. Typ. Max.
BW Guaranteed Operating Bandwidth GHz DC 6
IL Insertion Loss, RFin to RF
ISO Isolation, RFin to RF
RL
RL
P
out
1 dB
t
s
in
Input Return Loss dB 12 14
Output Return Loss dB 12 15
Input Power where IL increases by 1 dB f = 50 MHz dBm 18 23
Switching Speed, 10% – 90% RF Envelope, f = 2 GHz ns 1
out
, f = 6 GHz, ON throw dB 1 1.2
out
, f = 6 GHz, OFF throw dB 35 40
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Applications
The HMMC-2006 can be used in
instrumentation, communications, radar, ECM, EW, and many
other systems requiring SPDT
switching. It can be used for
pulse modulation, port isolation,
transfer switching, high-speed
switching, replacement of mechanical switches, and so on. It
can also be used as a terminated
SPST (single-pole-single-throw)
switch by placing a 50 Ω load on
either RF output port.
Assembly Techniques
Die attach may be done with
either a AuSn solder preform or
conductive epoxy. Gold
thermosonic bonding is recommended for all bonds. The top
and bottom metallization is gold.
For more detailed information
see HP application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
S-Parameters
[1]
, T
=25°C, ZO = 50 Ω, V
A
Frequency S
GHz Mag. Ang. Mag. Ang. Mag. Ang.
0.1 0.93 -8 4.26 172 0.01 86
0.5 0.0365 -27.03 0.9366 -11.32 0.0010 78.03
1.0 0.0372 -41.81 0.9336 -17.35 0.0017 76.84
1.5 0.0448 -63.14 0.9311 -23.47 0.0026 76.05
2.0 0.0542 -80.60 0.9286 -27.67 0.0033 75.66
2.5 0.0631 -88.46 0.9271 -29.73 0.0039 77.4
3.0 0.0715 -93.98 0.9242 -33.03 0.0049 81.14
3.5 0.0795 -101.90 0.9199 -38.93 0.0059 82.09
4.0 0.0872 -108.90 0.9164 -45.14 0.0063 78.90
4.5 0.0951 -114.40 0.9123 -50.49 0.0068 78.94
5.0 0.1022 -120.90 0.9054 -56.36 0.0078 84.68
5.5 0.1074 -123.50 0.9032 -62.07 0.0084 84.71
6.0 0.1138 -132.70 0.9058 -69.04 0.0115 91.24
Note:
1. 3-port-wafer-probed data.
11
high = 0 V, V
sel
low = -10 V
sel
S21 (Insertion Loss) S31 (Isolation)
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RF IN
RF
OUT
SEL2
Figure 1. HMMC-2006 Schematic.
Recommended Operating Conditions, T
Select Line RF Path
RF IN to RF IN to
SEL1 SEL2 RF OUT1
-10 V 0 V Isolated Low Loss
0 V -10 V Low Loss Isolated
SEL2
=25°C
A
RF OUT2
RF
OUT
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HMMC-2006 Typical Performance
-40
S
-50
-60
-70
INSERTION LOSS (dB)
-80
Figure 2. Insertion Loss
21-ON
0246
FREQUENCY (GHz)
[1]
vs.
Frequency.
-40
-50
-60
ISOLATION (dB)
-70
S
23
-14
-18
-22
RETURN LOSS (dB)
-26
-30
0246
FREQUENCY (GHz)
Figure 3. Input and Output (On
Throw) Return Loss
S
11
S
22
[1]
vs. Frequency.
-40
-50
-60
ISOLATION (dB)
-70
-80
0246
S
21-OFF
S
21-ON
FREQUENCY (GHz)
Figure 4. Input-to-Output Isolation
vs. Frequency.
[1]
-80
0246
FREQUENCY (GHz)
Figure 5. Output-to-Output Isolation
[2]
vs. Frequency.
Notes:
1. Wafer-probed measurements
2. Calculated from wafer-probed measurements
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960
460
SEL1 SEL2
610
1070
995
880
RF
OUT2
RF
IN
0
0
535
Figure 6. HMMC-2006 Bonding Pad Locations. (Dimensions in micrometers)
Chip ID
RF
OUT1
730
75
This data sheet contains a variety of typical and guaranteed performance data. The
information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For
additional information contact your local HP sales representative.
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