HI-SINCERITY
MICROELECTRONICS CORP.
HMJE3055T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE3055T is designed for general purpose of amplifier and
switching applications.
Spec. No. : HE6737-A
Issued Date : 1993.09.24
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperature
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature..................................................................................... 150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C).................................................................................... 75 W
Total Power Dissipation (Ta=25°C)................................................................................... 0.6 W
Maximum Voltages and Currents (Ta=25°C)
•
BVCBO Collector to Base Voltage...................................................................................... 70 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current ........................................................................................................... 10 A
IB Base Current.................................................................................................................... 6 A
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCEO 60 - - V IC=200mA, IB=0
BVCBO 70 - - V IC=10mA, IE=0
BVEBO 5 - - V IE=10mA, IC=0
ICBO - - 1. mA VCB=70V, IE=0
ICEX - - 1. mA VCE=70V, VEB(off)=1.5V
ICEO - - 700 uA VCE=30V, IB=0
IEBO - - 5 mA VEB=5V, IC=0
*VCE(sat)1 - - 1.1 V IC=4A, IB=400mA
*VCE(sat)2 - - 8.0 V IC=10A, IB=3.3A
*VBE(on) - - 1.8 V IC=4A, VCE=4V
*hFE1 20 - 100 IC=4A, VCE=4V
*hFE2 5 - - IC=10A, VCE=4V
fT 2 - - MHz VCE=10V, IC=500mA, f=0.5MHz
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6737-A
Issued Date : 1993.09.24
Revised Date : 1999.08.01
Page No. : 2/3
100
Current Gain & Collector Current
hFE @ VCE=4V
hFE
10
1 10 100 1000 10000
Collector Current (mA)
On Voltage & Collector Current
10000
10000
1000
100
Saturation Voltage (mV)
10
10
1
Satur ation Vol tage & Collect or Current
BE (sat)
V
CE (sat)
V
1 10 100 1000 10000
Collector Current (mA)
@ IC=10I
@ IC=10I
B
B
Switching Time & Collector Current
Tstg
1000
On Voltage (mV)
100
1 10 100 1000 10000
1000
100
Capac itan c e (pF)
Capacitance & Reverse- Bia sed Vol tage
BE (on)
V
@ VCE=4V
Collector Current (mA)
Cob
Ton
0.1
Switchin g T imes ( us)
0.01
0.1 1.0 10.0
100000
10000
(mA)
C
1000
100
Collector Current-I
10
Collector Current (A)
Sa fe Oper ating Area
Tf
PT=1 ms
PT=100 ms
PT=1 s
10
0.1 1 10 100
Reverse- Biased Vol t ag e ( V)
1
1 10 100 1000
Forwar d Voltage- VCE (V)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A B
D
H
I
G
Spec. No. : HE6737-A
Issued Date : 1993.09.24
Revised Date : 1999.08.01
Page No. : 3/3
Marking :
E
M
C
K
HSMC Logo
Part Number
Date Code
Style : Pin 1.Base 2.Collector 3.Emitter
Product Series
Rank
3
2
N
4
1
P
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I -
O
DIM
Min. Max. Min. Max.
*
0.1508 B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N -
*
0.1000 E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-*0.6398 -
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*
16.25
*:Typical
*
3.83
*
2.54
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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