Datasheet HMC154S8 Datasheet (Hittite)

'99

new!

MICROWAVE CORPORATION

GaAS MMIC SMT LOW DISTORTION T/R SWITCH DC - 2.5 GHz

HMC154S8

7

FEBRUARY 2001

Features

HIGH THIRD ORDER INTERCEPT: +60 dBm

SINGLE POSITIVE SUPPLY: +3 TO +10V

HIGH RF POWER CAPABILITY

TTL/CMOS CONTROL

V01.0700

General Description

The HMC154S8 is a low-cost SPDT switch
in an 8-lead SOIC package for use in trans­mit-receive applications which require very
low distortion at high signal power levels.
The device can control signals from DC to

2.5 GHz and is especially suited for 900MHz
and 1.8-2.2 GHz applications. The design
provides exceptional intermodulation per­formance; providing a +60dBm third order
intercept at 8 Volt bias. RF1 or RF2 is a
reflective short when "Off". On-chip circuitry
allows single positive supply operation at
very low DC current with control inputs com­patible with CMOS and most TTL logic fami­lies.

Guaranteed Performance, Vdd = +5 Vdc, 50 Ohm System, -40 to +85 deg C

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SWITCHES

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SPDT

SMT

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 16

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zHG0.2-CD
zHG5.2-CD

zHG0.1-CD
zHG0.2-CD
zHG5.2-CD

zHG0.1-CD
zHG0.2-CD
zHG5.2-CD

zHG0.1-5.0
zHG0.2-5.0

zHG0.1-5.0
zHG0.2-5.0

zHG5.2-CD

22
91
51

02
41
01

53
43

55
45

5.0

7.0

0.1

52
22
81

03
81
31

93
83

06
06

01
42

7.0

9.0

3.1

Bd
Bd
Bd

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Bd
Bd

Bd
Bd
Bd

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sn

MICROWAVE CORPORATION

HMC154S8 SMT LOW DISTORTION T/R SWITCH DC - 2.5 GHz

new!

HMC154S8

'99

V01.0700

Insertion Loss

0

-1

-2

-3

-4

INSERTION LOSS (dB)

-5
01234

FREQUENCY (GHz)

Return Loss

FEBRUARY 2001

Isolation

0

-10

-20

ISOLATION (dB)

-30

-40
01 234

FREQUENCY (GHz)

7

0

-10

-20

-30

RETURN LOSS (dB)

-40
01234

FREQUENCY (GHz)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 17

SWITCHES

SPDT

SMT

'99

new!

MICROWAVE CORPORATION

HMC154S8 SMT LOW DISTORTION T/R SWITCH DC - 2.5 GHz

FEBRUARY 2001

Input Power for 0.1 and 1.0 dB
Compression vs Bias Voltage

45

1db at 1900MHz

40

35

30

COMPRESSION (dBm)

25

2 4 6 8 10 12

BIAS (Volts)

1dB at 900MHz

0.1dB at 900MHz

0.1dB at 1900MHz

HMC154S8

Input Third Order Intercept
vs Bias Voltage

65
60

55

50

IP3 (dBm)

45

40

35

2 4 6 8 10 12

900MHz

1900MHz

BIAS (Volts)

V01.0700

Compression vs Bias Voltage

7

SWITCHES

SPDT

Caution: Do not operate in 1dB compression at power levels above +35dBm and do
not "hot switch" power levels greater than +23 dBm (Vdd = +5V).

SMT

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Distortion vs Bias Voltage

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 18

MICROWAVE CORPORATION

HMC154S8 SMT LOW DISTORTION T/R SWITCH DC - 2.5 GHz

new!

HMC154S8

'99

V01.0700

Functional Diagram

GND

RF2 GND

A

B

RF1

RF

Vdd

Absolute Maximum Ratings

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)B&A(egnaRegatloVlortnoCcdVddV+ot2.0-

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erutarepmeTgnitarepOCged58+ot04-

Outline

PIN 8

0.188/0.196
(4.78/4.98)

GND

RF2 GND

RF1

T ruth Table

*Control Input Voltage Tolerances are ± 0.2 Vdc

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ddV

A

)cdV(

300 0351-51-FFOFFO
30 ddV5252-0NOFFO
3ddV0 52052-FFONO
500 01155-55-FFOFFO
50 ddV511001-51-NOFFO
5ddV0 511

0100 083091-091-FFOFFO
010 ddV594572-

01ddV0 594
5ddV-ddV006006-522NOFFO
5ddVddV-006522006-FFONO

LOT NUMBER

B

)cdV(

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)cdV(

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tnerruC

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)Au(

-51

-022

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001-FFONO

-022
572-FFONO

FEBRUARY 2001

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1FRotFR 2FRotFR

NOFFO

7

DATE CODE

0.150/0.157
(3.81/4.00) (5.82/6.20)

0.229/0.244

HMC154S8

A

PIN 1

0.054/0.068
(1.37/1.73)

0.050

(1.27)

TYP

1) MATERIAL:
A) PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC,
SILICA & SILICONE IMPREGNATED
B) LEADFRAME MATERIAL: COPPER ALLOY

2 . PLATING: LEAD-TIN SOLDER PLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS)
UNLESS OTHERWISE SPECIFIED TOLERANCE ARE ±0.005 (±0.13)

B

0.014/0.018
(0.36/0.46)

TYP

RF

Vdd

0.004/0.009

3 Deg / 8 Deg

NNNNN

0.016
MIN TYP

(0.41)

YY= YEAR

WW= WEEK

YYWW

PIN 1 (REF)

0.007/0.009
(0.18/0.25)

TYP

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 19

SWITCHES

SPDT

SMT

'99

new!

MICROWAVE CORPORATION

HMC154S8 SMT LOW DISTORTION T/R SWITCH DC - 2.5 GHz

FEBRUARY 2001

Typical Application Circuit for HMC154S8

RF2

GND

Pin 1

A

+Vdd

B

HMC154S8

V01.0700

RF1

GND

Vdd

Notes:

7

1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.

2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates and
to pin 4 of the RF switch.

3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.

4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF
power capability) at bias voltages down to +3V.

SWITCHES

SPDT

SMT

CTL

RF

74HC04 or

74HCT04

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 20

MICROWAVE CORPORATION

HMC154S8 SMT LOW DISTORTION T/R SWITCH DC - 2.5 GHz

new!

HMC154S8

'99

V01.0700

FEBRUARY 2001

Evaluation Circuit Board

The circuit board used in the final application should use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground leads should be connected directly to the ground plane
similar to that shown below. A sufficient number of VIA holes should be used to connect the top and bottom
ground planes. The evaluation circuit board as shown is available from Hittite upon request.

7

Evaluation Circuit Board Layout Design Details

Layout Technique Grounded Co-Planar Waveguide (GCPW)
Material FR4
Dielectric Thickness 0.028" (0.71 mm)
50 Ohm Line Width 0.037" (0.94 mm)
Gap to Ground Edge 0.010" (0.25 mm)
Ground VIA Hole Diameter 0.014" (0.36 mm)

Connectors SMA-F ( EF - Johnson P/N 142-0701-806)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

7 - 21

SWITCHES

SPDT

SMT