Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8050
NPN EPITAXIAL TRANSISTOR
Description
The HMBT8050 is designed for general purpose amplifier
applications.
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
Features
• High DC Current hFE=150-400 at IC=150mA
• Complementary to HMBT8550
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 25 V
VCEO Collector to Emitter Voltage...................................................................................... 20 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ....................................................................................................... 700 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 25 - - V IC= 10uA, IE= 0
BVCEO 20 - - V IC= 1mA, IB= 0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 1 uA VCB=20V. IE=0
*VCE(sat) - - 500 mV IC=500mA, IB=50mA
VBE(on) - - 1 V VCE=1V, IC=150mA
*hFE 150 - 500 VCE=1V, IC=150mA
fT 150 - - MHz VCE=10V, IC=20mA, f=100MHz
Cob - - 10 pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank D9D D9E
Range 150-300 250-500
HMBT8050 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000 10000
10000
Current Gain & Collector Current
VCE=1V
Collector Current (mA)
On Vol ta ge & C ollector Cu rrent
10000
1000
100
Sat uratio n Volta g e (mV)
Sat ur ation Voltage & Coll ector Current
BE(sat)
V
CE(sat)
V
CE(sat)
V
10
0.1 1 10 100 1000 10000
B
@ IC=10I
@ IC=100I
@ IC=10I
B
B
Collector Curren t ( mA)
Cutoff Frequency & Collector Current
1000
VCE=10V
1000
BE(on)
V
On Voltage ( m V)
100
10 100 1000 10000
@ VCE=1V
Collector Curren t ( mA)
Capa citance & Rev er se-Bia sed Vol t age
100
10
Capacitan ce ( p F)
Cob
100
Cutoff Frequency (MHz)
10
1 10 100 1000
Collector Current (mA)
Safe Operat ing Area
10000
1000
100
Collector Curren t ( mA)
PT=1ms
PT=100ms
PT=1s
10
1
0.1 1 10 100 1000
Rev e r se- Biased Voltage ( V)
1
1 10 100
Forwar d Voltage ( V)
HMBT8050 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 3/3
A
L
3
B
S
21
GV
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
D 9
Rank Code
Control Code
C
JK
DIM
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Min. Max. Min. Max.
DIM
D
H
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Marking:
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT8050 HSMC Product Specification
Loading...