Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT6517 is designed for general purpose applications requiring high
breakdown voltages.
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 1/3
Features
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• The HMBT6517 is complementary to HMBT6520
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150 °C
Junction Temp e rature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................ 350 V
VEBO Emitter to Base Voltage......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 500 mA
IB Base Current ......................................................................................................................... 250 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 350 - - V IC=100uA
BVCEO 350 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 50 nA VCB=250V
IEBO - - 50 nA VEB=5V
*VCE(sat)1 - - 300 mV IC=10mA, IB=1mA
*VCE(sat)2 - - 350 mV IC=20mA, IB=2mA
*VCE(sat)3 - - 500 mV IC=30mA, IB=3mA
*VCE(sat)4 - - 1 V IC=50mA, IB=5 mA
VBE(on) - - 2 V VCE=10V , IC=100mA
*VBE(sat)1 - - 750 mV IB=1mA, IC=10mA
*VBE(sat)2 - - 850 mV IB=2mA, IC=20mA
*VBE(sat)3 - - 900 mV IB=3mA, IC=30mA
*hFE1 20 - - VCE=10V, IC=1mA
*hFE2 30 - - VCE=10V, IC=10mA
*hFE3 30 - 200 VCE=10V, IC=30mA
*hFE4 20 - 200 VCE=10V, IC=50mA
*hFE5 15 - - VCE=10V, IC=100mA
fT 40 - 200 MHz IC=10mA, VCE=20V, f=20MHz
Cob - - 6 pF VCB=20V , f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMBT6517 HSMC Product Specification
Page 2
HI-SINCERITY
V
V
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 2/3
1000
Current Gain & Collector Current
100
hFE
10
1
0.1 1 10 100 1000
10000
hFE @ VCE=10
Collector Current (mA)
On Voltage & Collector Current
100000
10000
1000
BE(sat)
V
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
B
@ IC=10I
CE(sat)
V
Collector Current (mA)
Capacitan ce & R everse-Bia sed Voltage
10
Sat urati on Voltage & C ol lector Current
@ IC=10I
B
1000
On Vo ltage ( m V)
100
1 10 100 1000
BE(on)
V
@ VCE=10
Collector Current (mA)
Cutoff Frequency & Collector Cu rrent
100
VCE=20
Cutoff Frequency (MHz)
Capacitan ce ( p F)
1
0.1 1 10 100
Reverse- Biased Vol t a ge ( V)
Cob
Safe Operati ng Area
10000
PT=100ms
PT=1s
1000
(mA)
C
100
Collector Current -I
10
PT=1ms
10
1 10 100
Collector Current (mA)
1
1 10 100 1000
Forwar d Voltage- V
CE
(V)
HMBT6517 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 3/3
A
L
3
B
S
21
GV
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
1 Z
Rank Code
Control Code
C
JK
DIM
Style: Pin 1.Base 2.Emitter 3.Collector
Min. Max. Min. Max.
DIM
D
H
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Marking:
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
*: Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT6517 HSMC Product Specification
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