Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT5551 is designed for general purpose applications
requiring high Breakdown Voltages.
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e............................................................................................. -55 + 150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
SOT-23
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 180 - - V IC=100uA
BVCEO 160 - - V IC=1.0mA
BVEBO 6 - - V IE=10uA
ICBO - - 50 nA VCB=120V
IEBO - - 50 nA VEB=4V
*VCE(sat)1 - - 0.15 V IC=10mA, IB=1.0mA
*VCE(sat)2 - - 0.2 V IC=50mA, IB=5mA
*VBE(sat)1 - - 1 V IC=10mA, IB=1mA
*VBE(sat)2 - - 1 V IC=50mA, IB=5mA
*hFE1 80 - - VCE=5V, IC=1mA
*hFE2 80 - 250 VCE=5V, IC=10mA
*hFE3 30 - - VCE=5V, IC=50mA
fT 100 - 300 MHz IC=10mA, VCE=10V, f=100MHz
Cob - - 6 pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMBT5551 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 2/3
1000
125oC
100
hFE
10
1
25oC
75oC
hFE @ VCE=5V
1 10 100 1000
Collector Current-IC (mA)
Sat urati on Voltage & Collector Current
1000
25oC
Cur rent Ga in & C o llector Current
100000
Sat uration Volta ge & Collect or Cu rrent
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
100
Capacitan ce & Reverse- B iased Vol tage
B
@ IC=10I
125oC
Collector Current-IC (mA)
75oC
25oC
75oC
125oC
Saturation Voltage (mV)
100
0.1 1 10 100 1000
Collector Current-IC (mA)
BE(sat)
V
@ IC=10I
Cut off Fr equency & Collector Current
1000
100
Cutoff Fr equen cy ( M Hz)...
VCE=10V
10
Capacitance (pF)
B
1
0.1 1 10 100 1000
10000
(mA)
C
Colleco tr Cu r rent-I
1000
100
PT=1s
10
Cob
Reverse Biased Vol t age (V)
Safe Operati ng Area
PT=1ms
PT=100ms
10
1 10 100
Collector Curren t ( m A )
1
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
HMBT5551 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 3/3
A
L
3
B
S
21
GV
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
G 1
Rank Code
Control Code
C
JK
DIM
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Min. Max. Min. Max.
DIM
D
H
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Marking:
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBT5551 HSMC Product Specification
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