Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HM3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM3669 is designed for using in power amplifier applications,
power switching application.
Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2000.07.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Tstg Storage Temperature .................................................................................... -55 ~ +150 °C
Tj Junction Temperature................................................................................................ +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)...................................................................................... 1 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Breakdown Voltage................................................................... 80 V
BVCEO Collector to Emitter Breakdown Voltage................................................................ 80 V
BVEBO Emitter to Base Emitter Breakdown Voltage............................................................ 5 V
IC Collector Current (DC)...................................................................................................... 2 A
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 80 - - V IC=100uA
BVCEO 80 - - V IC=10mA
BVEBO 5 - - V IE=100uA
ICBO - - 1000 nA VCB=80V
IEBO - - 1000 nA VEB=5V
*VCE(sat) - 0.15 0.5 V IC=1A, IB=50mA
*VBE(sat) - 0.9 1.2 V IC=1A, IB=50mA
*hFE 300 - - VCE=2V, IC=500mA
fT - 100 - MHz VCE=2V, IC=500mA
Cob - 30 - pF VCB=10V, f=1MHz
Ton - 0.2 - uS
Tstg - 1 - uS
Tf - 0.2 - uS
(Ta=25°C)
(Ta=25°C)
IB1=-IB2=50mA, Duty Cycle1%
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2000.07.01
Page No. : 2/3
10000
1000
100
hFE
10
1
0.1 1 10 100 1000 10000
10000
Current Gain & Collector Current
VCE=10V
Collector Curren t ( mA)
Saturation Voltag e & Collector Current
100000
10000
1000
Satu r ation Voltage ( m V)
100
CE(s at)
V
10
0.1 1 10 100 1000 10000
Collector Curren t ( mA)
Capacitance & Reverse-Biased Voltage
100.0
Saturation Voltage & Collector Curr ent
@ IC=20I
B
1000
BE(sat)
Satu r ation Voltage ( m V)
100
0 1 10 100 1000 10000
V
Collector Curren t ( mA)
@ IC=20I
B
10.0
Capac itance (pF)
1.0
0.1 1.0 10.0 100.0
Reverse Biased Vol tage (V)
Cob
HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-89 Dimension
Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2000.07.01
Page No. : 3/3
Marking :
C
B
D
321
E
H
HSMC Logo
Date Code
Part Number
Style : Pin 1.Base 2.Collector 3.Emitter
Package Code
I
F
G
A
3-Lead SOT-89 Plastic Surface Mounted Package
HSMC Package Code : M
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1732 0.1811 4.40 4.60 F 0.0583 0.0598 1.48 1.52
B 0.1594 0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04
C 0.0591 0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60
D 0.0945 0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41
E 0.0141 0.0201 0.36 0.51
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sales office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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