Datasheet HI5810 Datasheet (Intersil Corporation)

Page 1
August 1997
HI5810
CMOS 10 Microsecond, 12-Bit, Sampling
A/D Converter with Internal Track and Hold
Features
• Conversion Time . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µs
• Throughput Rate . . . . . . . . . . . . . . . . . . . . . . .100 KSPS
• Single Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . .+5V
• Maximum Power Consumption. . . . . . . . . . . . . . .40mW
• Internal or External Clock
• 1MHz Input Bandwidth . . . . . . . . . . . . . . . . . . . . . -3dB
Applications
• Remote Low Power Data Acquisition Systems
• Digital Audio
• DSP Modems
• General Purpose DSP Front End
µP Controlled Measurement Systems
• Process Controls
• Industrial Controls
Description
The HI5810 is a fast, low power, 12-bit, successive­approximation, analog-to-digital conv erter. It can operate from a single 3V to 6V supply and typically draws just 1.9mA when operating at 5V. The HI5810 features a built-in track and hold. The conversion time is as low as 10µs with a 5V supply.
The twelve data outputs feature full high speed CMOS three­state bus driver capability, and are latched and held through a full conversion cycle. The output is user selectable: [i.e., 12-bit, 8-bit (MSBs), and/or 4-bit (LSBs)]. A data ready flag, and conversion-start input complete the digital interface.
An internal clock is provided and is available as an output. The clock may also be over-driven by an external source.
Ordering Information
INL (LSB)
PART
NUMBER
HI5810JIP ±2.5 -40 to 85 24 Ld PDIP E24.3 HI5810KIP ±2.0 -40 to 85 24 Ld PDIP E24.3 HI5810JIB ±2.5 -40 to 85 24 Ld SOIC M24.3 HI5810KIB ±2.0 -40 to 85 24 Ld SOIC M24.3 HI5810JIJ ±2.5 -40 to 85 24 Ld CERDIP F24.3 HI5810KIJ ±2.0 -40 to 85 24 Ld CERDIP F24.3
(MAX OVER
TEMP.)
TEMP.
RANGE
(oC) PACKAGE
PKG.
NO.
Pinout
HI5810
(PDIP, CERDIP, SOIC)
TOP VIEW
DRDY
1
(LSB) D0
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
2 3
D1
4
D2
5
D3
6
D4
7
D5
8
D6
9
D7
10
D8
11
D9
V
12
SS
6-1777
24
V OEL
23
CLK
22
STRT
21
V
20
V
19
V
18
V
17
VAA-
16
OEM
15
D11 (MSB)
14
D10
13
DD
REF REF IN AA
+
­+
File Number 3633.1
Page 2
Functional Block Diagram
HI5810
V
V V
REF
V
AA
VAA-
STRT
DD SS
V
IN
+
+
TO INTERNAL LOGIC
50 SUBSTRATE
64C
63
32C
16C
8C
4C
2C
C
32C
16C
8C
4C
2C
CONTROL
AND
TIMING
12-BIT
SUCCESSIVE
APPROXIMATION
REGISTER
12-BIT EDGE
TRIGGERED
“D” LATCHED
CLOCK
CLK
DRDY
OEM
D11 (MSB)
D10
D9
D8
D7
D6
D5
D4
V
REF
P1
-
C
C
D3
D2
D1
D0 (LSB)
OEL
6-1778
Page 3
HI5810
Absolute Maximum Ratings Thermal Information
Supply Voltage
VDD to VSS . . . . . . . . . . . . . . . . . . . .(VSS -0.5V) < VDD < +6.5V
VAA+ to VAA-. . . . . . . . . . . . . . . . . . . . (VSS -0.5V) to (VSS +6.5V)
VAA+ to VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.3V
Analog and Reference Inputs
V
IN,VREF+,VREF
Digital I/O Pins . . . . . . . . . . . . . . (VSS -0.3V) < VI/O < (VDD+0.3V)
-. . . . . . . . . (VSS -0.3V) < V
< (VDD +0.3V)
INA
Operating Conditions
Temperature Range
PDIP, SOIC, and CERDIP Packages . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W)
CERDIP Package . . . . . . . . . . . . . . . . 60 12
PDIP Package. . . . . . . . . . . . . . . . . . . 80 N/A
SOIC Package. . . . . . . . . . . . . . . . . . . 75 N/A
Maximum Junction Temperature
Plastic Packages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150oC
Hermetic Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering, 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Electrical Specifications V
PARAMETER
ACCURACY
Resolution 12 - - 12 - Bits Integral Linearity Error, INL
(End Point)
Differential Linearity Error, DNL J - - ±2.0 - ±2.0 LSB
Gain Error, FSE (Adjustable to Zero)
Offset Error, V (Adjustable to Zero)
DYNAMIC CHARACTERISTICS
Signal to Noise Ratio, SINAD
Signal to Noise Ratio, SNR
Total Harmonic Distortion, THD J fS = Internal Clock, fIN = 1kHz
Spurious Free Dynamic Range, SFDR J fS = Internal Clock, fIN = 1kHz
ANALOG INPUT
Input Current, Dynamic At VIN = V
OS
RMS Signal
RMS Noise + Distortion
RMS Signal
RMS Noise
= VAA+ = 5V, V
DD
Unless Otherwise Specified
J--±2.5 - ±2.5 LSB K--±2.0 - ±2.0 LSB
K--±2.0 - ±2.0 LSB J--±3.5 - ±3.5 LSB K--±2.5 - ±2.5 LSB J--±2.5 - ±2.5 LSB K--±1.5 - ±1.5 LSB
JfS = Internal Clock, fIN = 1kHz
fS = 1.5MHz, fIN = 1kHz
KfS = Internal Clock, fIN = 1kHz
fS = 1.5MHz, fIN = 1kHz
JfS = Internal Clock, fIN = 1kHz
fS = 1.5MHz, fIN = 1kHz
KfS = Internal Clock, fIN = 1kHz
fS = 1.5MHz, fIN = 1kHz
fS = 1.5MHz, fIN = 1kHz
KfS = Internal Clock, fIN = 1kHz
fS = 1.5MHz, fIN = 1kHz
fS = 1.5MHz, fIN = 1kHz
KfS = Internal Clock, fIN = 1kHz
fS = 1.5MHz, fIN = 1kHz
+ = +4.608V, VSS = VAA- = V
REF
TEST CONDITIONS
+, 0V - ±125 ±150 - ±150 µA
REF
- = GND, CLK = External 1.5MHz,
REF
25oC -40oC TO 85oC
MIN TYP MAX MIN MAX
- 68.8
62.1
- 71.0
63.6
- 70.5
63.2
- 71.5
65.0
- -73.9
-68.4
- -80.3
69.7
- 75.4
69.2
- 80.9
70.7
-- -dB
-- -dB
-- -dB
-- -dB
- - - dBc
- - - dBc
-- -dB
-- -dB
UNITS
dB
dB
dB
dB
dBc
dBc
dB
dB
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Page 4
HI5810
Electrical Specifications V
= VAA+ = 5V, V
DD
+ = +4.608V, VSS = VAA- = V
REF
- = GND, CLK = External 1.5MHz,
REF
Unless Otherwise Specified (Continued)
25oC -40oC TO 85oC
PARAMETER
TEST CONDITIONS
MIN TYP MAX MIN MAX
UNITS
Input Current, Static Conversion Stopped - ±0.6 ±10 - ±10 µA
Input Bandwidth -3dB - 1 - - - MHz Reference Input Current - 160 - - - µA Input Series Resistance, R Input Capacitance, C Input Capacitance, C
SAMPLE HOLD
S
In Series with Input C
SAMPLE
- 420 - - - During Sample State - 380 - - - pF During Hold State - 20 - - - pF
DIGITAL INPUTS OEL, OEM, STRT High-Level Input Voltage, V Low-Level Input Voltage, V Input Leakage Current, I Input Capacitance, C
IL
IN
IH
IL
Except CLK, VIN = 0V, 5V - - ±10 - ±10 µA
2.4 - - 2.4 - V
- - 0.8 - 0.8 V
-10- - - pF
DIGITAL OUTPUTS
High-Level Output Voltage, V Low-Level Output Voltage, V Three-State Leakage, I Output Capacitance, C
OZ
OUT
OH
OL
I
SOURCE
I
SINK
Except DRDY, V
= -400µA 4.6 - - 4.6 - V
= 1.6mA - - 0.4 - 0.4 V
= 0V, 5V - - ±10 - ±10 µA
OUT
Except DRDY - 20 - - - pF
CLOCK
High-Level Output Voltage, V Low-Level Output Voltage, V
OH
OL
I
SOURCE
I
SINK
= -100µA (Note 2) 4 - - 4 - V
= 100µA (Note 2) - - 1 - 1 V
Input Current CLK Only, VIN = 0V, 5V - - ±5- ±5mA
TIMING
Conversion Time (t
CONV
+ t
ACQ
)
10 - - 10 - µs
(Includes Acquisition Time) Clock Frequency Internal Clock, (CLK = Open) 200 300 400 150 500 kHz
External CLK (Note 2) 0.05 - 2.0 - - MHz
Clock Pulse Width, t
LOW
, t
HIGH
External CLK (Note 2) 100 - - 100 - ns
Aperture Delay, tDAPR (Note 2) - 35 50 - 70 ns Clock to Data Ready Delay, tD1DRDY (Note 2) - 105 150 - 180 ns Clock to Data Ready Delay, tD2DRDY (Note 2) - 100 160 - 195 ns Start Removal Time, tRSTRT (Note 2) 75 30 - 75 - ns Start Setup Time, tSUSTRT (Note 2) 85 60 - 100 - ns Start Pulse Width, tWSTRT (Note 2) 10 4 - 15 - ns Start to Data Ready Delay, tD3DRDY (Note 2) - 65 105 - 120 ns Clock Delay from Start, tDSTRT (Note 2) - 60 - - - ns Output Enable Delay, t Output Disabled Delay, t
EN
DIS
(Note 2) - 20 30 - 50 ns (Note 2) - 80 95 - 120 ns
POWER SUPPLY CHARACTERISTICS
Supply Current, IDD + I
AA
- 2.6 8 - 8.5 mA
NOTE:
2. Parameter guaranteed by design or characterization, not production tested.
6-1780
Page 5
Timing Diagrams
HI5810
CLK
(EXTERNAL
OR INTERNAL)
STRT
DRDY
D0 - D11
V
OEL = OEM = V
1
IN
SS
2
t
DRDY
D1
t
D2
DATA N - 1
TRACK N TRACK N + 1
3
DRDY
4
5 - 14
t
LOW
HOLD N
15
1
t
HIGH
2
DATA N
3
FIGURE 1. CONTINUOUS CONVERSION MODE
CLK
(EXTERNAL)
STRT
DRDY
15
HOLD
V
IN
1
tRSTRT
2
2
TRACK
2
3
tSUSTRT
t
STRT
W
tD3DRDY
4
5
HOLD
FIGURE 2. SINGLE SHOT MODE EXTERNAL CLOCK
6-1781
Page 6
Timing Diagrams (Continued)
HI5810
(INTERNAL)
OEL OR OEM
D0 - D3 OR
D4 - D11
HIGH
IMPEDANCE
TO HIGH
HIGH
IMPEDANCE
TO LOW
CLK
STRT
DRDY
V
50%
50%
15 1
STRT
t
R
HOLD
IN
2
TRACK
345
t
STRT
D
t
STRT
W
DON’T CARE
tD3DRDY
HOLD
FIGURE 3. SINGLE SHOT MODE INTERNAL CLOCK
t
t
EN
1.6mA
DIS
90%
10%
TO OUTPUT PIN
1.6mA
+2.1V
50pF
-1.6mA
50pF
-400µA
FIGURE 4. OUTPUT ENABLE/DISABLE TIMING DIAGRAM FIGURE 5. TIMING LOAD CIRCUIT
Typical Performance Curves
2.0
1.9
1.8
1.7
1.6
1.5
1.4
INL ERROR (LSBs)
1.3
1.2
1.1
1.0
-50
VDD = VAA+ = 5V, V
-20 -10 80 90
-30
-40
+ = 4.608V, CLK = 1.5MHz
REF
0
10 20 30 40 50 60 70
TEMPERATURE (oC)
FIGURE 6. NL vs TEMPERATUREI FIGURE 7. OFFSET ERROR vs TEMPERATURE
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
ERROR (LSBs)
0.55
OS
V
0.50
0.45
0.40
0.35
0.30
-50
VDD = VAA+ = 5V, V
-30
-40
-20 -10 80 90
+ = 4.608V, CLK = 1.5MHz
REF
0
10 20 30 40 50 60 70
TEMPERATURE (
o
+2.1V
C)
6-1782
Page 7
Typical Performance Curves (Continued)
HI5810
1.75
1.70
VDD = VAA+ = 5V, V
1.65
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
DNL ERROR (LSBs)
1.20
1.15
1.10
1.05
1.00
-50 -40-30 0 10203040506070
-20 -10 80 90
+ = 4.608V, CLK = 1.5MHz
REF
TEMPERATURE (
o
C)
-1.0
-1.1 VDD = VAA+ = 5V, V
-1.2
-1.3
-1.4
-1.5
-1.6
-1.7
-1.8
-1.9
FSE (LSBs)
-2.0
-2.1
-2.2
-2.3
-2.4
-2.5
-50 -40-30 0 10203040506070
-20 -10 80 90
+ = 4.608V, CLK = 1.5MHz
REF
TEMPERATURE (
FIGURE 8. DNL vs TEMPERATURE FIGURE 9. FULL SCALE ERROR vs TEMPERATURE
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
SUPPLY CURRENT (mA)
1.5
1.0
0.5
0.0
-50 -40-30 0 10203040506070
-20 -10 80 90 TEMPERATURE (
o
C)
AMPLITUDE (dB)
FREQUENCY
FIGURE 10. SUPPLY CURRENT vs TEMPERATURE FIGURE 11. FFT SPECTRUM
o
C)
INPUT FREQUENCY = 1kHz SAMPLING RATE = 100kHz SNR = 64.92dB SINAD = 63.82dB EFFECTIVE BITS = 10.30 THD = -69.44dBc PEAK NOISE = -70.1dB SFDR = 70.1dB
500
450
400
350
300
250
200
INTERNAL CLOCK FREQUENCY (kHz)
150
-60
VDD = VAA+ = 5V, V
-20 0 20 40 60 80 100 120 140
-40
+ = 4.608V
REF
TEMPERATURE (
o
C)
FIGURE 12. INTERNAL CLOCK FREQUENCY vs TEMPERATURE
6-1783
Page 8
HI5810
TABLE 1. PIN DESCRIPTIONS
PIN NO. NAME DESCRIPTION
1 DRDY Output flag signifying new data is av ailab le .
Goes high at end of clock period 15. Goes low
when new conversion is started. 2 D0 Bit-0 (Least Significant Bit, LSB). 3 D1 Bit 1. 4 D2 Bit 2. 5 D3 Bit 3. 6 D4 Bit 4. 7 D5 Bit 5. 8 D6 Bit 6. 9 D7 Bit 7.
10 D8 Bit 8. 11 D9 Bit 9. 12 V 13 D10 Bit 10. 14 D11 Bit 11 (Most Significant Bit, MSB) 15 OEM Three-State Enable for D4-D11. Active low
16 VAA- Analog Ground, (0V). 17 VAA+ Analog Positive Supply. (+5V) (See text.) 18 VINAnalog Input. 19 V
20 V
Digital Ground, (0V).
SS
input.
+ Reference Voltage Positive Input, sets 4095
REF
code end of input range.
- Reference Voltage Negative Input, sets 0
REF
code end of input range.
During the first three clock periods of a conversion cycle, the switchable end of every capacitor is connected to the input and the comparator is being auto balanced at the capacitor common node.
During the fourth period, all capacitors are disconnected from the input; the one representing the MSB (D11) is connected to the V capacitors to V charges balance out, will indicate whether the input was
1
above
/2 of (V
REF
REF
+ terminal; and the remaining
REF
-. The capacitor common node, after the + - V
-). At the end of the fourth
REF
period, the comparator output is stored and the MSB capacitor is either left connected to V was high) or returned to V comparison to be at either
REF
3
/4 or1/4 of (V
+ (if the comparator
REF
-. This allows the next
REF
+ - V
REF
-).
At the end of periods 5 through 14, capacitors representing D10 through D1 are tested, the result stored, and each capacitor either left at V
REF
+ or at V
REF
-.
At the end of the 15th period, when the LSB (D0) capacitor is tested, (D0) and all the previous results are shifted to the output registers and drivers. The capacitors are reconnected to the input, the comparator returns to the balance state, and the data ready output goes active. The conversion cycle is now complete.
Analog Input
The analog input pin is a predominately capacitive load that changes between the track and hold periods of the conversion cycle. During hold, clock period 4 through 15, the input loading is leakage and stray capacitance, typically less than 5µA and 20pF.
At the start of input tracking, clock period 1, some charge is dumped back to the input pin. The input source must have lo w enough impedance to dissipate the current spike by the end of the tracking period as shown in Figure 13. The amount of charge is dependent on supply and input voltages. The average current is also proportional to clock frequency.
21 STRT Start Conversion Input active low, recognized
after end of clock period 15.
22 CLK CLK Input or Output. Conversion functions are
synchronized to positive going edge (see text). 23 OEL Three-State Enable for D0 D3. Active lo w input. 24 V
Digital Positive Supply (+5V).
DD
Theory of Operation
The HI5810 is a CMOS 12-bit, Analog-to-Digital Converter that uses capacitor charge balancing to successively approximate the analog input. A binarily weighted capacitor network forms the A/D heart of the device. See the block diagram for the HI5810.
The capacitor network has a common node which is connected to a comparator. The second terminal of each capacitor is individually switchable to the input, V V
-.
REF
REF
+ or
6-1784
20mA
I
IN
10mA
0mA
CLK
DRDY
5V
0V 5V
0V
200ns/DIV.
CONDITIONS: VDD= VAA+ = 5.0V, V
V
= 4.608V, CLK = 750kHz, TA = 25oC
IN
FIGURE 13. TYPICAL ANALOG INPUT CURRENT
+ = 4.608V,
REF
Page 9
HI5810
As long as these current spikes settle completely by end of the signal acquisition period, converter accuracy will be preserved. The analog input is tracked for 3 clock cycles. With an external clock of 1.5MHz the track period is 2µs.
A simplified analog input model is presented in Figure 14. During tracking, the A/D input (V
) typically appears as a
IN
380pF capacitor being charged through a 420 internal switch resistance. The time constant is 160ns. To charge this capacitor from an external “zero ” source to 0.5 LSB (1/8192), the charging time must be at least 9 time constants or 1.4µs. The maximum source impedance (R
SOURCE
Max) for a 2µs acquisition time settling to within
0.5 LSB is 164Ω. If the clock frequency was slower, or the converter was not
restarted immediately (causing a longer sample time), a higher source impedance could be tolerated.
V
IN
R
SOURCE
R
SOURCE (MAX)
FIGURE 14. ANALOG INPUT MODEL IN TRACK MODE
=
C
SAMPLE
R
SW
-t
ACQ
ln [2
420Ω
-(N + 1)
- R
]
C
SAMPLE
SW
380pF
Reference Input
The reference input V
+ should be driven from a low
REF
impedance source and be well decoupled. As shown in Figure 15, current spikes are generated on the
reference pin during each bit test of the successive approxi­mation part of the conversion cycle as the charge balancing capacitors are switched between V
REF
- and V
REF
+ (clock periods 5 - 14). These current spikes must settle completely during each bit test of the conversion to not degrade the accuracy of the converter. Therefore V should be well bypassed. Reference input V connected directly to the analog ground plane. If V
REF
REF
+ and V
- is normally
REF
REF
- is biased for nulling the converters offset it must be stable during the conversion cycle.
20mA
+
I
10mA
REF
0mA
CLK
DRDY
5V 0V
5V 0V
2µs/DIV.
CONDITIONS: VDD= VAA+ = 5.0V, V
V
= 2.3V, CLK = 750kHz, TA = 25oC
IN
FIGURE 15. TYPICAL REFERENCE INPUT CURRENT
+ = 4.608V,
REF
The HI5810 is specified with a 4.608V reference, however, it will operate with a reference down to 3V having a slight degradation in performance.
Full Scale and Offset Adjustment
In many applications the accuracy of the HI5810 would be sufficient without any adjustments. In applications where accuracy is of utmost importance full scale and offset errors may be adjusted to zero.
The V
REF
+ and V
- pins reference the two ends of the
REF
analog input range and may be used for offset and full scale adjustments. In a typical system the V
- might be returned
REF
to a clean ground, and the offset adjustment done on an input amplifier. V scale error. When this is not possible, the V adjusted to null the offset error, however, V
+ would then be adjusted to null out the full
REF
- input can be
REF
- must be well
REF
decoupled. Full scale and offset error can also be adjusted to zero in the
signal conditioning amplifier driving the analog input (V
Control Signal
The HI5810 may be synchronized from an external source by using the sion, or if
STRT (Start Conversion) input to initiate conv er-
STRT is tied low, may be allowed to free run. Each
conversion cycle takes 15 clock periods. The input is tracked from clock period 1 through period 3,
then disconnected as the successive approximation takes place. After the start of the next period 1 (specified by t data), the output is updated.
The DRDY (Data Ready) status output goes high (specified by t
DRDY) after the star t of clock period 1, and returns
D1
low (specified by t
DRDY) after the start of clock period 2.
D2
The 12 data bits are available in parallel on three-state bus driver outputs. When low, the
­significant byte (D4 through D11) while the
enables the four least significant bits (D0 - D3). t
OEM input enables the most
OEL input
EN
specify the output enable and disable times. If the output data is to be latched externally, either the trailing
edge of data ready or the next falling edge of the clock after data ready goes high can be used.
When
STRT input is used to initiate conv ersions, oper ation is slightly different depending on whether an internal or external clock is used.
Figure 3 illustrates operation with an internal clock. If the STRT signal is removed (at least tRSTRT) before clock period 1, and is not reapplied during that period, the clock will shut off after entering period 2. The input will continue to track and the DRDY output will remain high during this time.
A low signal applied to now initiate a new conversion. The delay of (t
STRT)) causes the clock to restart.
D
STRT (at least tWSTRT wide) can
STRT signal (after a
Depending on how long the clock was shut off, the low portion of clock period 2 may be longer than during the remaining cycles.
IN
and t
).
D
DIS
6-1785
Page 10
HI5810
The input will continue to track until the end of period 3, the same as when free running.
Figure 2 illustrates the same operation as above but with an external clock. If STRT is removed (at least tRSTRT) before clock period 2, a low signal applied to
STRT will drop the DRDY flag as before, and with the first positive going clock edge that meets the (t
STRT) setup time, the converter will
SU
continue with clock period 3.
Clock
The HI5810 can operate either from its internal clock or from one externally supplied. The CLK pin functions either as the clock output or input. All converter functions are synchro­nized with the rising edge of the clock signal.
Figure 16 shows the configuration of the internal clock. The clock output drive is low power: if used as an output, it should not have more than 1 CMOS gate load applied, and stray wiring capacitance should be kept to a minimum.
The internal clock will shut down if the A/D is not restarted after a conversion. The clock could also be shut down with an open collector driver applied to the CLK pin. This should only be done during the sample portion (the first three clock periods) of a conversion cycle, and might be useful for using the device as a digital sample and hold.
If an external clock is supplied to the CLK pin, it must have sufficient drive to overcome the internal clock source. The external clock can be shut off, but again, only during the sample portion of a conversion cycle. At other times, it must be above the minium frequency shown in the specifications. In the above two cases, a further restriction applies in that the clock should not be shut off during the third sample period for more than 1ms. This might cause an internal charge pump voltage to decay.
If the internal or external clock was shut off during the conversion time (clock cycles 4 through 15) of the A/D, the output might be invalid due to balancing capacitor droop.
An external clock must also meet the minimum t t
times shown in the specifications. A violation may
HIGH
LOW
and
cause an internal miscount and invalidate the results.
Except for VAA+, which is a substrate connection to VDD, all pins have protection diodes connected to V Input transients above V
or below VSS will get steered to
DD
and VSS.
DD
the digital supplies. The V
+ and VAA- terminals supply the charge balancing
AA
comparator only. Because the comparator is autobalanced between conversions, it has good low frequency supply rejection. It does not reject well at high frequencies however; V
- should be returned to a clean analog ground and VAA+
AA
should be RC decoupled from the digital supply as shown in Figure 17.
There is approximately 50 of substrate impedance between V
and VAA+. This can be used, for example, as
DD
part of a low pass RC filter to attenuate switching supply noise. A 10µF capacitor from V
+ to ground would
AA
attenuate 30kHz noise by approximately 40dB. Note that back-to-back diodes should be placed from V
to VAA+ to
DD
handle supply to capacitor turn-on or turn-off current spikes.
Dynamic Performance
Fast Fourier Transform (FFT) techniques are used to evalu­ate the dynamic performance of the A/D. A low distortion sine wave is applied to the input of the A/D conver ter. The input is sampled by the A/D and its output stored in RAM. The data is than transformed into the frequency domain with a 4096 point FFT and analyzed to evaluate the conver ters dynamic performance such as SNR and THD. See Typical Performance Characteristics.
Signal-To-Noise Ratio
The signal to noise ratio (SNR) is the measured RMS signal to RMS sum of noise at a specified input and sampling frequency. The noise is the RMS sum of all except the fundamental and the first five harmonic signals. The SNR is dependent on the number of quantization levels used in the conver ter. The theo­retical SNR for an N-bit converter with no differential or integral linearity error is: SNR = (6.02N + 1.76)dB. For an ideal 12-bit converter the SNR is 74dB. Differential and integral linearity errors will degrade SNR.
SNR = 10 Log
Sinewave Signal Power
Total Noise Power
INTERNAL ENABLE
CLK
OPTIONAL
EXTERNAL
CLOCK
FIGURE 16. INTERNAL CLOCK CIRCUITRY
100k
CLOCK
18pF
Power Supplies and Grounding
and VSS are the digital supply pins: they power all
V
DD
internal logic and the output drivers. Because the output drivers can cause fast current spikes in the V
DD
and V
SS
lines, VSS should have a low impedance path to digital ground and V
should be well bypassed.
DD
6-1786
Signal-To-Noise + Distortion Ratio
SINAD is the measured RMS signal to RMS sum of noise plus harmonic power and is expressed by the following.
SINAD = 10 Log
Sinewave Signal Power
Noise + Harmonic Power (2nd - 6th)
Effective Number of Bits
The effective number of bits (ENOB) is derived from the SINAD data;
ENOB =
SINAD - 1.76
6.02
Page 11
HI5810
Total Harmonic Distortion
The total harmonic distortion (THD) is the ratio of the RMS sum of the second through sixth harmonic components to the fundamental RMS signal for a specified input and sampling frequency.
THD = 10Log
Total Harmonic Power (2nd - 6th Harmonic)
Sinewave Signal Power
Spurious-Free Dynamic Range
The spurious-free dynamic range (SFDR) is the ratio of the fundamental RMS amplitude to the RMS amplitude of the next largest spur or spectral component. If the harmonics are buried in the noise floor it is the largest peak.
SFDR = 10Log
Sinewave Signal Power
Highest Spurious Signal Power
TABLE 2. CODE TABLE
INPUT
BINARY OUTPUT CODE
VOLTAGE
V
CODE
DESCRIPTION
+ = 4.608V
REF
V
REF
- = 0V
(V)
DECIMAL
COUNT
MSB LSB
D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
Full Scale (FS) 4.6069 4095 1 1 1 1 1 1 1 1 1 1 1 1 FS - 1 LSB 4.6058 4094 1 1 1 1 1 1 1 1 1 1 1 0
3
/4 FS 3.4560 3072 1 1 0 0 0 0 0 0 0 0 0 0
1
/2 FS 2.3040 2048 1 0 0 0 0 0 0 0 0 0 0 0
1
/4 FS 1.1520 1024 0 1 0 0 0 0 0 0 0 0 0 0 1 LSB 0.001125 1 0 0 0 0 0 0 0 0 0 0 0 1 Zero 0 0 0 0 0 0 0 0 0 0 0 0 0 0
The voltages listed above represent the ideal lower transition of each output code shown as a function of the reference voltage.
+5V
0.1µF
0.01µF0.1µF10µF
VAA+V
V
REF
0.1µF4.7µF
ANALOG
INPUT
0.001µF
V
+
REF
V
IN
-VAA-V
V
REF
DD
D11
D0
DRDY
OEM
OEL
STRT
CLK
.
.
.
SS
4.7µF
OUTPUT DAT A
1.5MHz CLOCK
FIGURE 17. GROUND AND SUPPLY DECOUPLING
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Page 12
Die Characteristics
HI5810
DIE DIMENSIONS:
3200µm x 3940µm
METALLIZATION:
Type: AlSi Thickness: 11k
Å ±1kÅ
Metallization Mask Layout
D2
D3
D4
D1
D0 (LSB)
PASSIVATION:
Type: PSG Thickness: 13k
Å ±2.5kÅ
WORST CASE CURRENT DENSITY:
5
2
1.84 x 10
HI5810
DRDY VDDOEL
A/cm
CLK
STRT
V
REF
-
D5
V
D6
D7
D8
D9
SS
D11D10
(MSB)
OEMV
REF
V
IN
VAA+
VAA-
+
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Cor poration reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
6-1788
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