HI-SINCERITY
MICROELECTRONICS CORP.
HI3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI3669 is designed for using in power amplifier applications,
power switching application.
Spec. No. : HE9029-B
Issued Date : 1997.11.14
Revised Date : 2000.11.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Tstg Storage Temperature .................................................................................... -55 ~ +150 °C
Tj Junction Temperature................................................................................................ +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)................................................................................. 1.25 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Breakdown Voltage................................................................... 80 V
BVCEO Collector to Emitter Breakdown Voltage................................................................ 80 V
BVEBO Emitter to Base Emitter Breakdown Voltage............................................................ 5 V
IC Collector Current (DC)...................................................................................................... 2 A
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 80 - - V IC=100uA
BVCEO 80 - - V IC=10mA
BVEBO 5 - - V IE=100uA
ICBO - - 1000 nA VCB=80V
IEBO - - 1000 nA VEB=5V
*VCE(sat) - 0.15 0.5 V IC=1A, IB=50mA
*VBE(sat) - 0.9 1.2 V IC=1A, IB=50mA
*hFE 300 - - VCE=2V, IC=500mA
fT - 100 - MHz VCE=2V, IC=500mA
Cob - 30 - pF VCB=10V, f=1MHz
Ton - 0.2 - uS
Tstg - 1.0 - uS
Tf - 0.2 - uS
(Ta=25°C)
(Ta=25°C)
IB1=-IB2=50mA, Duty Cycle≤1%
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9029-B
Issued Date : 1997.11.14
Revised Date : 2000.11.01
Page No. : 2/3
10000
1000
100
hFE
10
1
0.1 1 10 100 1000 10000
10000
Current Gain & Collector Current
VCE=10V
Collector Curren t ( mA)
Saturation Voltag e & Collector Current
100000
10000
1000
Satu r ation Vol tage (m V)
100
CE(s at)
V
10
0.1 1 10 100 1000 10000
Collector Curren t ( mA)
Capacitance & Reverse-Biased Voltage
100.0
Saturation Voltage & Collector Curr ent
@ IC=20I
B
1000
BE(sat)
Satu r ation Vol tage (m V)
100
0 1 10 100 1000 10000
V
Collector Curren t ( mA)
@ IC=20I
B
Safe Operatin g Area
100000
10000
1000
100
Collector Curren t ( mA)
10
PT=1ms
PT=100ms
PT=1s
10.0
Capac itance (pF)
1.0
0.1 1.0 10.0 100.0
Reverse Biased Vol t age ( V)
Cob
1
1 10 100 1000
Forwar d Vol tage (V)
HSMC Product Specification
HI-SINCERITY
g
MICROELECTRONICS CORP.
TO-251 Dimension
Spec. No. : HE9029-B
Issued Date : 1997.11.14
Revised Date : 2000.11.01
Page No. : 3/3
A
C
B
HSMC Logo
D
Part Number
Date Code
Product Series
Rank
Ink Mark
F G
Style : Pin 1.Base 2.Collector 3.Emitter
3
I
Marking :
E
K
2
H
1
J
3-Lead TO-251 Plastic Package
DIM
HSMC Packa
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
e Code : I
DIM
Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.2559 - 6.50 B 0.0354 0.0591 0.90 1.50 H - *0.1811 - *4.60
C 0.0177 0.0236 0.45 0.60 I - 0.0354 - 0.90
D 0.0866 0.0945 2.20 2.40 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2677 0.2835 6.80 7.20
Notes :
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, pleas e contact your l ocal HSMC sal es office.
*:Typical
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringem ent of pat ents, or applic ati on assistance.
Head Office And Factory :
•
Head Office
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
Tel : 886-3-5977061 Fax : 886-3-5979220
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
HSMC Product Specification
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