Page 1
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
SURF ACE MOUNT GLASS PASSIV ATED
HIGH EFFICIENCY SILICON RECTIFIER
VOL TAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEA TURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.067 (1.70
0.051 (1.29
)
)
HFM101
THRU
HFM108
)
0.180(4.57
)
0.160(4.06
DO-214AC
0.110 (2.79
0.086 (2.18
)
)
HFM108
1000
700
1000
)
)
)
)
0.012 (0.305
600
420
600
0.006 (0.152
0.008 (0.203
0.004 (0.102
)
)
HFM107
800
560
800
12
1.7
75
)
0.091 (2.31
)
0.067 (1.70
)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Pulse energy, non repetitive(inductive load switch off ) ER
Operating and Storage T emperature Range
ELECTRICAL CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC Volts
Maximum Full Load Reverse Current, Full cycle Average
Maximum DC Reverse Current at
Rated DC Blocking Voltage
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
TA = 55oC
@TA = 25oC
@TA = 125oC
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
TJ, T
STG
SYMBOL
V
F
I
R
trr
HFM101
50
35
50
HFM101 HFM106HFM103 HFM107 HFM108
0.059 (1.50
)
0.035 (0.89
0.209 (5.31
0.185 (4.70
Dimensions in inches and (millimeters)
HFM102
100
70
100
HFM102 HFM105
1.0
HFM103
200
140
200
15
50Maximum Reverse Recovery Time (Note 1)
HFM104
HFM105
300
400
210
280
300
400
30
20
-65 to + 150
HFM104
1.3
50
5.0
100 uAmps
HFM106
UNITS
Volts
Volts
Volts
Amps1.0
Amps
pF
mJ
0
C
UNITS
uAmps
uAmps
nSec
2002-2
Page 2
RATING AND CHARACTERISTIC CURVES
(
HFM101 THRU HFM108
)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE10NONINDUCTIVE
( + )
25 Vdc
(approx)
NOTES:
D.U.T
( - )
1
NONINDUCTIVE
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
OSCILLOSCOPE
(NOTE 1)
( - )
PULSE
GENERATOR
(NOTE 2)
( + )
+0.5A
-0.25A
-1.0A
trr
0
1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ = 150
TJ = 100
1.0
TJ = 25
.1
INSTANTANEOUS REVERSE CURRENT, (uA)
.01
400 20 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
10
1.0
.1
.01
INSTANTANEOUS FORWARD CURRENT, (A)
.001
0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
Single Phase
Half Wave 60Hz
Resistive or
1.0
0
0 25 50 75 100125 150175
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
HFM104~HFM105
HFM101~HFM103
Pulse Width = 300uS
1% Duty Cycle
Inductive Load
HFM106~HFM108
TJ = 25
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
60
50
8.3ms Single Half Sine-Wave
(JEDEC Method)
40
30
20
10
0
PEAK FORWARD SURGE CURRENT, (A)
1 2 5 10 20 50 100
NUMBER OF CYCLES AT 60Hz
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
HFM101~HFM105
TJ = 25
HFM106~HFM108
4
2
JUNCTION CAPACITANCE, (pF)
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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