12-bit to 24-bit Registered Bus Exchanger with 3-state Outputs
ADE-205-178A (Z)
2nd. Edition
March 1998
Description
The HD74ALVCH162270 is used in applications where data must be transferred from a narrow high speed
bus to a wide lower frequency bus. The device provides synchronous data exchange between the two ports.
Data is stored in the internal registers on the low to high transition of the clock (CLK) input when the
appropriate CLKEN inputs are low. The select (SEL) line selects 1B or 2B data for the A outputs. For data
transfer in the A to B direction, a two stage pipeline is provided in the A to 1B path, with a single storage
register in the A to 2B path. Proper control of the CLKENA inputs allows two sequential 12-bit words to
be presented synchronously as a 24-bit word on the B port. Data flow is controlled by the active low output
enables (OEA, OEB). The control terminals are registered to synchronize the bus direction changes with
CLK. Active bus hold circuitry is provided to hold unused or floating data inputs at a valid logic level. All
outputs, which are designed to sink up to 12 mA, include 26 Ω resistors to reduce overshoot and
undershoot.
Features
• VCC = 2.3 V to 3.6 V
• Typical VOL ground bounce < 0.8 V (@VCC = 3.3 V, Ta = 25°C)
• Typical VOH undershoot > 2.0 V (@VCC = 3.3 V, Ta = 25°C)
• High output current ±12 mA (@VCC = 3.0 V)
• Bus hold on data inputs eliminates the need for external pullup / pulldown resistors
• All outputs have equivalent 26 Ω series resistors, so no external resistors are required.
Page 2
HD74ALVCH162270
Function Table
InputsOutputs
CLKOEAOEBA1B, 2B
↑HHZZ
↑HLZActive
↑LHActiveZ
↑LLActiveActive
Output enable
InputsOutputs
CLKENA1CLKENA2CLKA1B2B
XH↑L1B
XH↑H1B
LL↑LL
*1, 2
0
*1, 2
0
*2
LL↑HH *2H
HL↑L1B
HL↑H1B
HHXX1B
*1L
0
*1H
0
*12B0
0
A-to-B storage (OEB = L)
2B0
2B0
L
*1
*1
*1
Note: This functional table describes the case of transferring the same data for A to 1B path. For the case
of transferring different data, see logic diagrams.
H : High level
L : Low level
X : Immaterial
Z : High impedance
↑ : Low to high transition
Notes: 1. Output level before the indicated steady state input conditions were established.
2. Two CLK edges are needed to propagate data.
*1
0
*1
0
3
Page 4
HD74ALVCH162270
Pin Arrangement
OEA
CLKEN1B
2B3
GND
2B2
2B1
V
CC
A1
A2
A3
GND
A4
A5
A6
A7
A8
A9
GND
A10
A11
A12
V
CC
1B1
1B2
GND
1B3
CLKEN2B
SEL
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
OEB
1
2
3
4
5
6
7
8
9
56
CLKENA2
55
54
2B4
53
GND
2B5
52
51
2B6
50
V
2B7
49
2B8
48
47
2B9
46
GND
2B10
45
2B11
44
43
2B12
42
1B12
1B11
41
1B10
40
GND
39
38
1B9
1B8
37
1B7
36
35
V
34
1B6
33
1B5
32
GND
31
1B4
30
CLKENA1
29
CLK
CC
CC
(Top view)
4
Page 5
HD74ALVCH162270
Absolute Maximum Ratings
ItemSymbolRatingsUnitConditions
Supply voltageV
Input voltage
Output voltage
*1, 2
*1, 2
Input clamp currentI
Output clamp currentI
Continuous output currentI
VCC, GND current / pinICC or I
Maximum power dissipation
at Ta = 55°C (in still air)
*3
CC
V
I
V
O
IK
OK
O
GND
P
T
Storage temperatureTstg–65 to 150°C
Notes:Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage
to the device. These are stress ratings only, and functional operation of the device at these or
any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
1. The input and output negative voltage ratings may be exceeded if the input and output clamp
current ratings are observed.
2. This value is limited to 4.6 V maximum.
3. The maximum package power dissipation is calculated using a junction temperature of 150°C
and a board trace length of 750 mils.
–0.5 to 4.6V
–0.5 to 4.6VExcept I/O ports
–0.5 to VCC +0.5I/O ports
–0.5 to VCC +0.5V
–50mAVI < 0
±50mAVO < 0 or VO > V
±50mAVO = 0 to V
CC
±100mA
1WTSSOP
CC
Recommended Operating Conditions
ItemSymbolMinMaxUnitConditions
Supply voltageV
Input voltageV
Output voltageV
High level output currentI
Low level output currentI
CC
I
O
OH
OL
Input transition rise or fall rate∆t / ∆v010ns / V
Operating temperatureTa–4085°C
Note: Unused control inputs must be held high or low to prevent them from floating.
2.33.6V
0VCCV
0VCCV
—–6mAV
—–8V
= 2.3 V
CC
= 2.7 V
CC
—–12VCC = 3.0 V
—6mAVCC = 2.3 V
—8V
—12V
= 2.7 V
CC
= 3.0 V
CC
5
Page 6
HD74ALVCH162270
Logic Diagram
29
CLK
CLKEN1B
CLKEN2B
CLKENA1
CLKENA2
OEB
SEL
OEA
A1
2
27
30
55
56
28
1
8
C1
1D
G1
C1
1D
CE
C1
1D
1
1
CE
C1
1D
23
1B1
6
2B1
CE
C1
1D
1 of 12 Channels
CE
C1
1D
CE
C1
1D
6
Page 7
Electrical Characteristics (Ta = –40 to 85°C)
HD74ALVCH162270
ItemSymbol V
Input voltageV
IH
(V)MinMaxUnit Test Conditions
CC
2.3 to 2.7 1.7—V
2.7 to 3.6 2.0—
V
IL
2.3 to 2.7 —0.7
2.7 to 3.6 —0.8
Output voltageV
OH
2.3 to 3.6 VCC–0.2—VIOH = –100 µA
2.31.9—IOH = –4 mA, VIH = 1.7 V
2.31.7—IOH = –6 mA, VIH = 1.7 V
3.02.4—IOH = –6 mA, VIH = 2.0 V
2.72.0—IOH = –8 mA, VIH = 2.0 V
3.02.0—IOH = –12 mA, VIH = 2.0 V
V
OL
2.3 to 3.6 —0.2IOL = 100 µA
2.3—0.4IOL = 4 mA, VIL = 0.7 V
2.3—0.55IOL = 6 mA, VIL = 0.7 V
3.0—0.55IOL = 6 mA, VIL = 0.8 V
2.7—0.6IOL = 8 mA, VIL = 0.8 V
3.0—0.8IOL = 12 mA, VIL = 0.8 V
Input currentI
IN
I
IN (hold)
3.6—±5µAVIN = VCC or GND
2.345—VIN = 0.7 V
2.3–45—VIN = 1.7 V
3.075—VIN = 0.8 V
3.0–75—VIN = 2.0 V
*1
or GND
CC
Off state output currentI
Quiescent supply current I
∆I
3.6—±500VIN = 0 to 3.6 V
OZ
CC
CC
3.6—±10µAV
3.6—40µAVIN = VCC or GND
3.0 to 3.6 —750µAVIN = one input at (VCC–0.6) V,
= VCC or GND
OUT
other inputs at V
Note:1. This is the bus hold maximum dynamic current required to switch the input from one state to
Switching Characteristics (Ta = –40 to 85°C) (cont)
ItemSymbol VCC (V)MinTypMaxUnitFROM (Input)
Setup timet
Hold timet
Pulse widtht
su
h
w
2.5±0.24.1——nsA data before CLK↑
2.73.8——
3.3±0.33.1——
2.5±0.20.9——B data before CLK↑
2.71.2——
3.3±0.30.9——
2.5±0.23.5——CLKENA1 or
2.73.2——CLKENA2 before CLK↑
3.3±0.32.7——
2.5±0.23.4——CLKEN1B or
2.73.0——CLKEN2B before CLK↑
3.3±0.32.6——
2.5±0.24.4——OE before CLK↑
2.73.9——
3.3±0.33.2——
2.5±0.20——nsA data after CLK↑
2.70——
3.3±0.30.2——
2.5±0.21.4——B data after CLK↑
2.71.0——
3.3±0.31.7——
2.5±0.20——CLKENA1 or
2.70.1——CLKENA2 after CLK↑
3.3±0.30.3——
2.5±0.20——CLKEN1B or
2.70——CLKEN2B after CLK↑
3.3±0.30.6——
2.5±0.20——OE after CLK↑
2.70——
3.3±0.30.1——
2.5±0.23.3——nsCLK “H” or “L”
2.73.3——
3.3±0.33.3——
9
Page 10
HD74ALVCH162270
• Test Circuit
500 Ω
See under table
S1
OPEN
*1
L
500 ΩC = 50 pF
GND
Load Circuit for Outputs
Symbol
t / t
PLH PHL
t / t / t
su hw
t / t
ZH HZ
t / t
ZL LZ
Note: 1. C includes probe and jig capacitance.
L
Vcc=2.5±0.2V
OPEN
GND
4.6 V6.0 V
Vcc=2.7V,
3.3±0.3V
OPEN
GND
10
Page 11
HD74ALVCH162270
• Waveforms – 1
Input
Output
• Waveforms – 2
Timing Input
Data Input
Input
10 %
90 %
t
t
f
V
IH
V
ref
10 %
t
PHL
V
ref
r
90 %
V
ref
GND
V
OH
V
OL
V
IH
GND
t
h
V
IH
V
ref
t
r
90 %
V
ref
t
PLH
V
ref
10 %
t
su
V
ref
GND
t
w
V
IH
V
ref
V
ref
GND
11
Page 12
HD74ALVCH162270
• Waveforms – 3
t
f
Output
Control
Waveform - A
Waveform - B
90 %
V
ref
10 %10 %
t
ZL
V
ref
t
ZH
V
ref
Notes: 1. All input pulses are supplied by generators having the following characteristics:
PRR ≤ 10 MHz, Zo = 50 Ω, tr ≤ 2.5 ns, tf ≤ 2.5 ns.
2. Waveform – A is for an output with internal conditions such that the output is low
except when disabled by the output control.
3. Waveform – B is for an output with internal conditions such that the output is high
except when disabled by the output control.
4. The output are measured one at a time with one transition per measurement.
t
r
90 %
V
ref
t
LZ
V + 0.3 V
OL
t
HZ
V – 0.3 V
OH
IH
ref
OH1
OL1
Vcc=2.5±0.2V
2.3 V2.7 V
1.2 V1.5 V
2.3 V3.0 V
GND
TEST
V
V
V
V
V
GND
≈V
V
V
≈V
Vcc=2.7V,
3.3±0.3V
GND
IH
OH1
OL
OH
OL1
12
Page 13
Package Dimensions
14.00
+0.3
–0.1
HD74ALVCH162270
Unit : mm
2956
+0.3
–0.1
6.10
128
+0.1
0.20
–0.05
0.50
0.08
M
0.40 Max
0.10
0.05 Min
1.20 max
8.10 ± 0.3
0.15 ± 0.05
JEDEC code
Hitachi code
EIAJ code
10° Max
0.50 ± 0.1
TTP-56D
—
—
13
Page 14
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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