Datasheet hd1530fx Datasheet

Page 1
for High Definition and New Super-Slim CRT Display
Features
■ STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1
■ WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
■ LESS SENSITIV E TO OPER ATIN G
TEMPERATURE VARIATION
■ FULLY INSULA TED PO WE R PACKA GE
WHICH IS U.L COMPLIANT
HD1530FX
High Voltage NPN Power Transistor
3
2
1
Applications
■ HORIZONTAL DEFLECTION OUTPUT FOR
DIGITAL TV, HDTV, AND HIGH -END MONITORS
Description
The device uses a Diffused Collector in Planar technology which adopts ”Enhanced High Voltage Structure” (EHVS1) that was developed to fit High-Definition CRT displays.
The new HD product series features improved silicon efficiency , bringing updated performance to Horizontal Deflection output stages.
Order Codes
ISOWATT218FX
Internal Schematic Diagram
Part Number Marking Package Packing
HD1530FX HD1530FX ISOWATT218FX TUBE
rev.3
August 2005 1/7
www.st.com
7
Page 2

1 Absolute Maximum Ratings HD1530FX

1 Absolute Maximum Ratings

Table 1. Absolute Maximum Ratingsn

Symbol Parameter Value Unit
V V V
P
T
CES CEO EBO
I
I
CM
I
I
BM TOT
V
STG
T
Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitte-Base Voltage (IC = 0) Collector Current 26 A
C
Collector Peak Current (tP < 5ms) Base Current 10 A
B
Base Peak Current (tP < 5ms) Total dissipation at Tc = 25°C Insulation Withst and Volt age (RMS ) from All Three Leads to
ins
1500 V
700 V
10 V
40 A
20 A 70 W
2500 V
External Heatsink Storage Temperature -65 to 150 °C Max. Operating Junction Temperature 150 °C
J

1.1 Thermal Data

Table 2. Thermal Data

Symbol Parameter Value Unit
R
thJC
Thermal Resistance Junction-Case____________________Max 1.8 °C/W
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Page 3
HD1530FX 2 Electrical Char acteristics

2 Electrical Characteristics

Table 3. Electrical Characteristics (T
= 25°C; unless otherwise specified)
CASE
Symbol Parameter Test Conditions Min. T yp. Max. Unit
V
I
CES
I
EBO
V
CEO(SUS)
Note: 1
V
EBO
V
CE(sat)
Note: 1
V
BE(sat)
Collector Cut-off Current (V
= 0)
BE
Emitter Cut-off Current
= 0)
(I
C
Collector-Emitter Sustaining Voltage (I
= 0)
B
Emitter-Base Voltage Collec tor-Emitter saturatio n
Voltage Base-Emitter saturation Volt age
= 1500V
CE
V
= 1500V____TC = 125°C
CE
V
= 5V 10 μA
EB
I
= 10mA 700 V
C
I
= 10mA 10 V
E
I
= 13A _____ IB = 3.25A 2 V
C
I
= 13A _____ IB = 3.25A 1 1.5 V
C
0.2 2
Note: 1
h
FE
t
t
t
t
t
t
DC Current Gain IC = 1A _____ V
INDUCTIVE LOAD Storage Time
s
Fall Time
f
INDUCTIVE LOAD Storage Time
s
Fall Time
f
INDUCTIVE LOAD Storage Time
s
Fall Time
f
= 5V
CE
I
= 13A ____ V
C
= 12A ____ _ fh = 32KHz
I
C
I
= 1.4A ___ I
B(on)
= 12A _____ fh = 48KHz
I
C
= 2A ____ I
I
B(on)
= 6.5A _____ fh = 100KHz
I
C
I
= 0.8A ___ I
B(on)
CE
B(off)
B(off)
B(off)
= 5V
= -6.7A
5.5
= -6A
= -4.5A
30
9
3.2
230
2.8
200
1.4
100
mA mA
μs ns
μs ns
μs ns
Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%.
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Page 4

3 Package Mechani cal Data HD1530FX

3 Package M echanical Da ta
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Page 5
HD1530FX 3 Package Mechanical Data

Table 4. ISOWATT218FX Mechanica l Data

Figure 1. ISOWATT218FX Drawing
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Page 6
4 Revision Hist ory HD1530FX

4 Revision History

Date Revision Changes
05-July-2005 1 Initi al release. 25-July-2005 2 New Template, no content change 19-Aug-2005 3 New ECOPACK® label
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Page 7
HD1530FX 4 Revision History
I
s
o
d
b
ct
t
ot
a
nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence
f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grante y implic ation or otherwise under any patent or patent ri ghts of STM i croelectr onics. Specifications menti oned in thi s publicati on are subje
o change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are n
uthoriz ed for use as critical compo nents in life support devic es or systems without express writt en approval of STMicroel ectronics.
The ST logo is a registered t rademark of S TM i croelectr oni cs.
All other nam es are the pro perty of thei r respectiv e owners
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