
HCS244T
Data Sheet July 1999 File Number
Radiation Hardened Octal Buffer/Line
Driver, Three-State
Intersil‘s Satellite Applications FlowTM (SAF) devices are
fully tested and guaranteed to 100kRAD total dose. These
QML Class T devices are processed to a standard flow
intended to meet the cost and shorter lead-time needs of
large volume satellite manufacturers, while maintaining a
high level of reliability.
The Intersil HCS244T is a Radiation Hardened NonInverting Octal Buffer/Line Driver, Three-State, with two
active-low output enables.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HCS244T are
contained in SMD 5962-95731. A “hot-link” is provided from
our website for downloading.
www.intersil.com/spacedefense/ne wsafc lasst.asp
4616.1
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 10
- Latch-Up Free Under Any Conditions
- SEP Effective LET No Upsets: >100 MEV-cm
- Single Event Upset (SEU) Immunity < 2 x 10
Errors/Bit-Day (Typ)
• 3 Micron Radiation Hardened CMOS SOS
• Fanout (Over Temperature Range)
• Bus Driver Outputs - 15 LSTTL Loads
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
= 0.3 VCC Max
-V
IL
-V
= 0.7 VCC Min
IH
• Input Current Levels Ii ≤ 5µA at V
5
RAD(Si)
OL
, V
OH
2
/mg
-9
Intersil‘s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
TEMP.
ORDERING
INFORMATION
5962R9573101TRC HCS244DTR -55 to 125
5962R9573101TXC HCS244KTR -55 to 125
NOTE:
Minimumorderquantity for -T is150 units through
distribution, or 450 units direct.
PART
NUMBER
RANGE
(oC)
Pinouts
OE
1
A0
1
Y3
2
A1
1
Y2
2
A2
1
Y1
2
A3
1
Y0
2
GND
HCS244DTR (SBDIP), CDIP2-T20
TOP VIEW
OE
A0
Y3
A1
Y2
A2
Y1
A3
Y0
GND
1
1
2
1
3
2
4
1
5
2
6
1
7
2
8
1
9
2
10
20
V
CC
19
2
OE
18
1
Y0
17
2
A3
16
1
Y1
15
2
A2
14
1
Y2
13
2
A1
12
1
Y3
11
2
A0
HCS244KTR (FLATPACK), CDFP4-F20
TOP VIEW
120
2
3
4
5
6
7
8
9
10
19
18
17
16
15
14
13
12
11
V
CC
OE
2
Y0
1
A3
2
Y1
1
A2
2
Y2
1
A1
2
Y3
1
A0
2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
| Copyright © Intersil Corporation 1999

Functional Diagram
HCS244T
1OE
1Y0 1Y1 1Y2 1Y3 2Y0 2Y1 2Y2 2Y3
NPNPNPNPPNPNPNPN
1
2 4 6 8 11 13 15
1A0 1A1 1A2 1A3 2A0 2A1 2A2 2A3
357912141618
19
2OE
17
TRUTH TABLE
INPUTS OUTPUT
1OE, 2OE A Y
LLL
LHH
HXZ
H = High Voltage Level
L = Low Voltage Level
X = Immaterial
Z = High Impedance
2

Die Characteristics
HCS244T
DIE DIMENSIONS:
(2747µm x 2693µm x 533µm ±51.0µm)
108 x 106 x 21mils ±2mil
METALLIZATION:
Type: Al Si
Thickness: 11.0k
Å ±1kÅ
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
Metallization Mask Layout
A1 1 (4)
Y2 2 (5)
Y3 2
(3)
A0 1
(2)
HCS244T
OE
(1)
PASSIVATION:
Type: Silox (S
Thickness: 13.0k
)
iO2
Å ±2.6kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
224
PROCESS:
CMOS SOS
V
OE 2
CC
(20)
(19)
(18) Y0 1
(17) A3 2
(16) Y1 1
A2 1 (6)
(15) A2 2
Y1 2 (7)
(14) Y2 1
(8)
A3 1
(9)
Y0 2
(10)
GND
(11)
A0 2
(13)(12)
A1 2Y3 1
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only .Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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