Datasheet HAL805UT-K, HAL805UT-E, HAL805UT-A Datasheet (Micronas Intermetall)

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PRELIMINARY DATA SHEET

MICRONAS

HAL805 Programmable Linear Hall Effect Sensor

Edition Feb. 2, 2000 6251-513-1PD

MICRONAS

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HAL805 PRELIMINARY DATA SHEET

Contents Page Section Title 3 1. Introduction

3 1.1. Major Applications 3 1.2. Features 4 1.3. Marking Code 4 1.4. Operating Junction Temperature Range (T 4 1.5. Hall Sensor Package Codes 4 1.6. Solderability 4 1.7. Pin Connections and Short Descriptions

5 2. Functional Description

5 2.1. General Function 7 2.2. Digital Signal Processing and EEPROM 9 2.3. Calibration Procedure 9 2.3.1. General Procedure 10 2.3.2. Calibration of the Angle Sensor

)

11 3. Specifications

11 3.1. Outline Dimensions 11 3.2. Dimensions of Sensitive Area 11 3.3. Position of Sensitive Area 12 3.4. Absolute Maximum Ratings 12 3.5. Recommended Operating Conditions 13 3.6. Electrical Characteristics 14 3.7. Magnetic Characteristics 14 3.8. Open Circuit Detection 15 3.9. Typical Characteristics

17 4. Application Notes

17 4.1. Application Circuit 17 4.2. Use of two HAL 805 in Parallel 17 4.3. Temperature Compensation 18 4.4. Undervoltage Behavior 18 4.5. Am bi ent Te mpe ratur e 18 4.6. EMC and ESD

19 5. Programming of the Sensor

19 5.1. Definition of Programming Pulses 19 5.2. Definition of the Telegram 21 5.3. Telegram Codes 22 5.4. Number Formats 23 5.5. Register Information 23 5.6. Programming Information

24 6. Data Sheet History

Note: Some exclusivity restrictions may apply for the use of this sensor in automotive applications.

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PRELIMINARY DATA SHEET HAL805

Programmable Linear Hall Effect Sensor

1. Introduction

The HAL 805 is a recent member of the Micronas family of programmable linear Hall sensors. As an extension to the HAL 800, it offers open-circuit detection and individual programmi ng of different sensors which are in parallel to the same supply voltage.

The HAL 805 is an universal magnetic field sensor with a linear output bas ed on the Hall effect. The IC i s designed and produ ced in sub-mic ron CMOS techn ology and can be used for angle or distance measurements if combined wit h a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are p rogrammable in a non-volatile memo ry. The sensor has a ratiometric output ch aracter isti c, which mean s th at the output voltage is propor ti on al to the m agn eti c flux and t he supply voltage.

The HAL 805 features a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redundancy and lock function for the calibration data, a serial interface for programming the EEPROM, and protection devices at all pins. The internal digital signal processing is of great b enefit because ana log offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy.

The sensor is des igned for hostile ind ustrial a nd automotive applications and operates with typically 5 V supply voltage in the amb ient temperature range fr om

−40 °C up to 150 °C. The HAL 805 is available in the

very small leaded package TO-92UT.

1.1. Major Applications

Due to the sensor’s versatile programming c haracteristics, the HAL 805 is the optimal s ystem solution for applications such as:

– contactless potentiometers, – angle sensors, – distance measurements, – magnetic field and current measurement.

1.2. Features

– high-precision linear Hall effect sensor with

ratiometric output and digital signal processing

– multiple programmable magnetic characteristics in a

non-volatile memory (EEPROM) with redundancy and lock function

– open-circuit detectio n (gro und and su ppl y li ne brea k

detection)

– for programming an individual sensor withi n several

sensors in parallel to the same supply voltage, a selection can be done via the output pin

The HAL 805 is programmable by modulating the s upply voltage. No additional programming pi n is needed. The easy programmab ility allows a 2-point calib ration by adjusting the output voltage directly to the input signal (like mechanic al angle, distance, or curren t). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final ass embly. This offers a low-cost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system.

In addition, the t emperature compensation of the Hall IC can be fit to all commo n magne tic mat er ials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high accuracy.

The calculation of the indiv idual se nsor cha racteristi cs and the programming of the EEPROM memory can easily be done with a PC and the applic ation kit from Micronas.

– to enable programming of an individual sensor

amongst several sensors running parallel to the same supply voltage, each sensor can be sel ected via its output pin

– temperature characteristics are programmable for

matching all common magnetic materials – programmable clamping function – programming through a modulation of the supply

voltage – operates from

ambient temperature – operates from 4.5 V up to 5.5 V supply voltage in

specification and functions up to 8.5 V – total error < 2.0% over operating voltage range and

temperature range – operates with static magnetic fields and dynamic

magnetic fields up to 2 kHz – overvoltage and reverse-voltage protection at all pins – magnetic characteristics extremely robust against

mechanical stress – short-circuit protected push-pull output

−40 °C up to 150 °C

– EMC and ESD optimized design

Micronas 3

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HAL805 PRELIMINARY DATA SHEET

HALXXXPA-T

Temperature Range: A, K, or E Package: UT for TO-92UT Type: 805

1.3. Marki n g C o de

The HAL 805 has a marking on the package surface (branded side). T his m ark ing in clud es the name o f th e sensor and the temperature range.

Type Temperature Range

A K E

HAL 805 805A 805K 805E

1.4. Operating Junction Temperature Range (T

)

The Hall sensors from Micronas are specified to the chip temperature (junction temperature T

A: TJ = K: TJ = E: TJ =

−40 °C to +170 °C

−40 °C to +140 °C

−40 °C to +100 °C

The relationship between ambient temperature (T

and junction temperature is explained in Section 4.5. on page 18.

1.6. Solderability

Package TO-92UT: according to IEC68-2-58 During soldering reflow processing and manual

reworking, a component body temperature of 260 °C should not be exceeded.

Components stored in the original packaging should provide a shelf life of at least 12 m onths, starting fro m the date code pr inted on the package labels, even in environments as extreme as 40 °C and 90% relative humidity.

1.7. Pin Connections and Short Descriptions

Pin Name Type Short Description

No.

IN Supply Voltage and

Programming Pin

)

2 GND Ground 3 OUT OUT Push Pull Output

and Selection Pin

1.5. Hall Sensor Package Codes

Example: HAL805UT-K

→ Type: 805 → Package: TO-92UT → Temperature Range: T

= −40°C to +140°C

Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Co des for Hall Sensors”.

OUT

GND

Fig. 1–1: Pin configuration

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PRELIMINARY DATA SHEET HAL805

2. Functional Description

2.1. General Function

The HAL 805 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall pla te an d pr oportional to the supply voltage (ratiometric behavior).

The external magnetic field component perpendi cular to the branded side of th e package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital S ignal Processing Unit (DSP) according to the se tti ngs o f th e E EPROM r egi sters, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 7.

The setting of the LOCK register disables the programming of the EE PROM memor y for all time. This r egister cannot be reset.

As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). In the supply voltage range from 4.5 V up to 5.5 V , the sensor generates an analog o utput voltage. After detecting a c ommand, the sensor reads or writes the memory and answers with a digital signal on the output pin. The

analog output is switched off during the communication.

Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin.

The open-circuit detection provides a defined output voltage if the V

or GND line is broken. Inte rnal tem-

perature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with mi nimal change s in accuracy a nd high offset stability. The circuitry also rejects offset shifts due to mechan ical st ress from the package. The non-volatile memor y consists of redundant EEPROM cells. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins.

HAL

8 7

(V)

805

GND

Fig. 2–1: Programming with V

OUT

(V)

OUT

digital

modulation

analog

Internally stabilized Supply and Protection Devices

Switched Hall Plate

Supply Level Detection

GND

Temperature Dependent Bias

A/D Converter

Fig. 2–2: HAL 805 block diagram

Oscillator

Digital Signal Processing

EEPROM Mem ory

Lock Control

D/A Analog Converter Output

Digital Output

Open Circuit Detection

10 k

100

Ω

Protection Devices

OUT

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HAL805 PRELIMINARY DATA SHEET

–40 –20 0 20 40

OUT

Clamp-high = 4 V

Sensitivity = 0.116

= 2.5 V

Clamp-low = 1 V

Range = 30 mT Filter = 500 Hz

Fig. 2–4: Example for output characteristics

ADC-READOUT Register

14 bit

Digital Signal Processing

TC 6 bit

A/D Converter

TCSQ 5 bit

Digital Filter

MODE Register RANGE 3 bit

FILTER 3 bit

Multiplier Adder Limiter D/A

SENSITIVITY LOW

14 bit

VOQ

11 bit

EEPROM Memory

Fig. 2–3: Details of EEPROM and Digital Signal Processing

CLAMP-

10 bit

CLAMPHIGH

11 bit

LOCKR 1 bit

Lock Control

Digital

Output

Converter

Micronas Registers

Range = 100 mT Filter = 2 kHz

Sensitivity = –1.36 V

= –0.5 V

Clamp-low = 0.5 V

Clamp-high = 4.5 V

OUT

0 –150 –100 –50 0 50 100 150

Fig. 2–5: Example for output characteristics

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PRELIMINARY DATA SHEET HAL805

2.2. Digital Signal Processing and EEPROM

The DSP is the m ain par t of t his sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM r egisters. The details are shown in Fig. 2–3.

Terminology:

SENSITIVITY: name of the register or register value Sensitivity: name of the parameter

The EEPROM registers consist of three groups: Group 1 contains the r egisters for the adaption of the

sensor to the magnetic system: MODE for selecting the magnetic field range an d filter frequency, TC a nd TCSQ for the temperature character istics of the magnetic sensitivity.

Group 2 contains the registers for defining the output characteristics: SENSITIVITY, VOQ, CLAMP-LOW, and CLAMP-HIGH. The output characteristic of the sensor is defined by these 4 parameters (see Fig. 2–4 and Fig. 2–5 for examples).

– The parameter V

(Output Quiescent Voltage) cor-

responds to the output voltage at B = 0 mT.

– The parameter Sensitivity defines the magnetic sen-

sitivity:

∆V

Sensitivity =

OUT

∆B

2000

1500

ADCREADOUT

1000

500

–500

–1000

–1500

–2000

–200–150–100–50 0 50 100 150 200

Fig. 2–6: Typical ADC-READOUT versus magnetic field for filter = 2 kHz

Filter = 2 kHz

Range 150 mT Range 90 mT Range 60 mT Range 30 mT

– The output voltage can be calculated as:

∼ Sensitivity × B + V

OUT

The output voltage range can be clamped by setting the registers CLAMP-LOW and CLAMP-HIGH in order to enable failure detection (such as short-circuits to

or GND and open connections).

Group 3 contains the Micronas registers and LOCK for the locking of all r egisters. The Mi cronas regi sters are programmed and locked during production and are read-only for the customer. These registers a re used for oscillator frequency tr imming, A/D converter offs et compensation, and several other special settings.

An external magnetic field g enerates a Hall voltage on the Hall plate. The ADC converts the amplified positive or negative Hall voltage (operates with m agnetic no r th and south poles at the branded side of the package) to a digital value. Positive values correspond to a magnetic nor th pole on the branded side of the package. The digital signa l is filt ered in th e inter nal low-pass fi lter and is readable in the ADC-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating range of the A/D converter i s

−30 mT...+30 mT up to −150 mT...+150 mT.

from

During further processing, the digital signal is multiplied with the se nsitivity factor, added to the quies cent output voltage and limited according to the clamping voltage. The result is converted to an analog signal and stabilized by a push-pull output transistor stage.

The ADC-READOUT at any given magnetic field depends on the programmed magnet ic field range but also on the filter frequenc y. F ig. 2–6 shows the typical ADC-READOUT values for the different magnetic field ranges with the filter frequen cy set to 2 kHz. The rela tionship between the minimum and maximum ADCREADOUT values and the filter frequency setting is listed in the following table.

Filter Frequency ADC-READOUT RANGE

80 Hz 160 Hz 500 Hz 1 kHz 2 kHz

−3968...3967

−1985...1985

−5292...5290

−2646...2645

−1512...1511

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HAL805 PRELIMINARY DATA SHEET

Note: During application design, it should be taken into consideration that the maximum and minimum ADC-READOUT is not exceeded during calibration and operation of the Hall IC. Consequently, the maximum and minimum magnetic fie lds that may occur in the operational range of a s pecific application should not saturate the A/D converter. Please note that the A/D converter saturates at magnetic fi elds well above, respectively below, the magnetic range limits. This large safety band between specified magnetic range and true operational range hel ps to avoid any saturation.

Range

The RANGE bits are the three lowest bits of the MODE register; they define the magnetic field range of the A/D converter.

Magnetic Field Range RANGE

−30 mT...30 mT 0

−40 mT...40 mT 4

−60 mT...60 mT 5

−75 mT...75 mT 1

−80 mT...80 mT 6

−90 mT...90 mT 2

−100 mT...100 mT 7

−150 mT...150 mT 3

TC and TCSQ

The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby , the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magne t and the sensor assembly. As a result, the output voltage characteristic can be fixed over the full temperature range. The sen sor can compensate for linear temperature coefficients ranging from about dratic coefficients fr om about

−3100 ppm/K up to 400 ppm/K and qua-

−5 ppm/K² to 5 ppm/K².

Please refer to Section 4.3. on page 17 for the recommended settings for different linear temperature coefficients.

Sensitivity

The SENSITIVITY register contains the parameter for the multiplier in the DSP. The Sensitivity is programmable between

−4 and 4. For V

= 5 V, the register

can be changed in steps of 0.00049. Sensitivity = 1 corresponds to an increase of the output voltage by

if the ADC-READOUT increases by 2048.

For all calculations, the di gi tal value from th e magnetic field of the A/D converter is use d. This digital i nformation is readable from the ADC-READOUT register.

∆V

* 2048

Sensitivity =

∆ADC-READOUT * V

OUT

VOQ

Filter

The VOQ register contains the parameter for the adder

The FILTER bits are the three highest bits of the MODE register; they define the

−3 dB frequency of the

digital low pass filter.

in the DSP. V magnetic field (B = 0 mT, respectively ADC-READOUT = 0) and programmable from

is the output voltage without external

−V

up to VDD. For V

= 5 V, the register can be changed in steps of 4.9 mV.

−3 dB Frequency FILTER

80 Hz 0 160 Hz 1 500 Hz 2 1 kHz 3 2 kHz 4

Note: If V

is programmed to a negative voltage, the

maximum output voltage is limited to:

OUTmax

= VOQ + V

For calibration in the system environment, a 2-point adjustment procedure (see Section 2.3.) is recommended. The suitable Sensitivity and V

valu es for

each sensor can be ca lculated indi viduall y by this procedure.

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PRELIMINARY DATA SHEET HAL805

Clamping Voltage

The output voltage range c an be clamped in order to detect failures like shor ts to V

or GND or an open

circuit. The CLAMP-LOW register co ntains the parameter for

the lower limit. The lower clamping voltage is programmable between 0 V and V

/2. For VDD = 5 V, the reg-

ister can be changed in steps of 2.44 mV. The CLAMP-HIGH reg ister co ntains the param eter for

the upper limit. The upper clamping voltage is programmable between 0 V and V

. For VDD = 5 V, in

steps of 2.44 mV.

LOCKR

By setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation.

Warning: This register cannot be reset!

ADC-READOUT

This 14-bit register delivers the actual digital value of the applied magnetic field before the signal processing. This regist er can be read out and is the bas is for the calibration pro cedure of the sensor in the s ystem environment.

2.3. Calibration Procedure

2.3.1. General Procedure

For calibration in the syste m environmen t, the appli cation kit from Mi cron as i s rec om men ded . It contains the hardware for the generation of the ser ial telegram for programming and the corresponding software for the input of the register values.

In this section, pro gramming of the sensor usin g this programming tool is explained. Please refer to Section 5. on page 19 for information ab out programming without this tool.

For the individual calibration of each sensor in the customer application, a two point adjustment is recommended (see Fig. 2–7 for an example). When using the application ki t, the c alibratio n can b e done in thr ee steps:

Step 1: Input of the registers which need not be adjusted individually

The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, and low and high clamping voltage are g iven for this application.

Therefore, the values of the following registers shou ld be identical for all sensors of the customer application.

– FILTER

(according to the maximum signal frequency)

– RANGE

(according to the maximum magnetic field at the sensor position)

– TC and TCSQ

(depends on the material of the magnet and the other temperature dependencies of the application)

– CLAMP-LOW and CLAMP-HIGH

(according to the application requirements)

Write the appr opriate settings i nto the HAL 805 registers.

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HAL805 PRELIMINARY DATA SHEET

Low clamping voltage ≤ V

OUT1,2

≤ High clamping voltage

OUT1

− V

OUT2

ADC-READOUT1 − ADC-READOUT2

Sensitivity =

2048

ADC-READOUT1 * Sensitivity * V

2048

VOQ = V

OUT1

−

Step 2: Calculation of VOQ and Sensitivity

The calibration points 1 and 2 can be set inside the specified range. The corresponding values for V and V

result from the application requirements.

OUT2

OUT1

For highest accuracy of the sensor, calibration points near the minimum and maximum inp ut signal are recommended. The difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 V.

Set the system to ca libration poin t 1 and read th e register ADC-READOUT. The result is the value ADCREADOUT1.

Now, set the system to calibration point 2, read the register ADC-READOUT again, and get the value ADC-READOUT2.

With these values and the target values V

, for the calibration points 1 and 2, re spectively,

OUT2

the values for Sensitivity and V

are calculated as:

OUT1

and

Clamp-high = 4.5 V

Calibration point 1

OUT

–30 –20 –10 0 10 20 30

Clamp-low = 0.5 V

Calibration point 2

Angle

Fig. 2–7: Example for output characteristics

This calculation has to be done individually for each sensor.

Next, write the calculated values for Sensitivity and

into the IC for adjusting the sensor.

The sensor is now calibrated for the customer appl ication. However, the programming can be changed again and again if necessary.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the “LOCK” command. The sensor is now locked and does not respond to any programming or reading commands.

Warning: This register cannot be reset!

2.3.2. Calibration of the Angle Sensor

The following description explains the calibrati on procedure using an angle sensor as an example. The required output characteristic is shown in Fig. 2–7.

– the angle range is from

−25° to 25°

Step 1: Input of the registers which need not be adjusted individually

The register values f or the following registers ar e g iven for all applications:

– FILTER

Select the filter frequency: 500 Hz

– RANGE

Select the magnetic field range: 30 mT

– TC

For this magnetic material: 6

– TCSQ

For this magnetic material: 14

– CLAMP-LOW

For our example: 0.5 V

– CLAMP-HIGH

For our example: 4.5 V

Enter these values in the software, and use the “write and store” command for per manently writing the values in the registers.

– temperature coefficient of the magnet:

10 Micronas

−500 ppm/K

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PRELIMINARY DATA SHEET HAL805

Step 2: Calculation of VOQ and Sensitivity

There are two ways to calculate the values for V

and Sensitivity. Manual Calculation: Set the system to calibration point 1 (a ngle 1 =

−25°)

and read the register ADC- READOUT. For our example, the result is ADC-READOUT1 =

−2500.

Next, set the system to calibration point 2 (angle 2 = 25°), and read the register ADC-READO UT again. For our example, the result is ADC-READOUT2 =

With these measurements and the targets V

4.5 V and V V

are calculated as

Sensitivity =

= 4.5 V −

= 0.5 V, the values for Sensiti vity and

OUT2

4.5 V − 0.5 V

−2500 − 2350

−2500 * (−0.3378) * 5 V

2048

−0.3378

= 2.438 V

+2350.

OUT1

Software Calibration: Use the menu CALIBRATE from the PC so ftware and

enter the values 4.5 V for V Set the system to calibrat ion point 1 (angle 1 =

and 0.5 V for V

OUT1

OUT2

−25°),

hit the button “Read ADC-Readout1”, set the system to calibration point 2 (angl e 2 = 25°), hi t the button “Read ADC-Readout2”, and hit the button “Calculate”. The software will then calculate the appropriate V

and

Sensitivity. This calculation has to be done individually for each

sensor. Now, write the calculated values with the “write and store” command into the HAL 805 for programming the sensor.

3. Specifications

3.1. Outline Dimensions

±0.1

0.48

0.55

0.42

4.06

123

1.271.27

(2.54)

branded side

1.5

0.3

0.36

45°

SPGS0014-3-A/1E

Fig. 3–1:

±0.2

0.75

4.05

±0.2

2.1

13.0 min.

sensitive area

±0.1

0.8

Plastic Transistor Single Outline Package

(TO-92UT)

Weight approximately 0.14 g Dimensions in mm

Note: A mechanical tolerance of

±50 µm applies t o all

dimensions where no tolerance is explicitly given.

3.2. Dimensions of Sensitive Area

0.25 mm x 0.25 mm

Step 3: Locking the Sensor

The last step is activating the LOCK function with the

3.3. Position of Sensitive Area

“LOCK” command. The sensor is now locked and does not respond to any programming or reading com-

TO-92UT

mands.

x1 − x2/ 2 ≤ 0.2 mm

Warning: This register cannot be reset!

y = 1.5 mm

± 0.2 mm

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HAL805 PRELIMINARY DATA SHEET

3.4. Absolute Maximum Ratings

Symbol Parameter Pin No. Min. Max. Unit

V V

−I

I V

OUT

− V

Supply Voltage 1 −8.5 8.5 V Supply Voltage 1 −14.4 Reverse Supply Current 1 − 50 Current through Protection Device 1 or 3 −300 Output Voltage 3 −5

Excess of Output V oltage over Supply Voltage

OUT

as long as T

t < 10 min (V

as long as T

t < 2 ms

t < 1000h

internal protection resistor = 100 Ω

Continuous Output Current 3 −10 10 mA Output Short Circuit Duration 3 − 10 min Storage Temperature Range −65 150 °C Junction Temperature Range −40

is not exceeded

Jmax

= −15 V for t < 1 min, V

DDmin

is not exceeded, output is not protected to external 14 V-line (or to −14 V)

Jmax

3,1 2 V

= 16 V for t < 1 min)

DDmax

−5

−40

1) 2)

14.4

300

8.5

14.4

170 150

1) 2)

3) 2)

V mA mA V

°C °C

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating onl y. Functional operation of the device at these or any oth er condi tions beyond those indic ated i n the “Rec ommended Operating Conditions/Character istics” of this specificati on is not i mplied. Ex posure to abs olute maximum ratings conditions for extended periods may affect device reliability.

3.5. Recommended Operating Conditions

Symbol Parameter Pin No. Min. Typ. Max. Unit

V I

OUT

R C

Supply Voltage 1 4.5 5 5.5 V Continuous Output Current 3 −1 − 1mA Load Resistor 3 4.5 −−kΩ Load Capaci tance 3 0.33 10 1000 nF

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PRELIMINARY DATA SHEET HAL805

3.6. Electrical Characteristics

= −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.

at T

Typical Characteristics for T

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

= 25 °C and VDD = 5 V.

DDZ

Supply Current over Temperature Range

Overvoltage Protection at Supply

Overvoltage Protection at Output

Resolution 3 12 bit ratiometric to V

Accuracy Error over all 3 −202%R

INL Non-Linearity of Output Voltage

over Temperature

∆V

OUTCL

Ratiometric Error of Output over Temperature (Error in V

OUT

/ VDD)

Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range

∆V

OUTCH

Accuracy of Output Voltage at Clamping High Voltage over

Temperature Range V V

OUTH

OUTL

Output High Voltage 3 4.65 4.8 V V

Output Low Voltage 3 0.2 0.35 V V

1710mA

1 17.5 20 V IDD = 25 mA, TJ = 25 °C, t = 20 ms

31719.5VI

3 −1 0 1 % % of supply voltage

−101% V

−45 0 45 mV R

= 10 mA, TJ = 25 °C, t = 20 ms

= 4.7 kΩ (% of supply voltage)

- V

OUT2

 > 2 V

= 5 V

OUT

≤ 1mA ≤ 1mA

OUT1

during calibration procedure

= 4.7 kΩ, V

= 5 V, −1 mA ≤ I

ADC

r(O)

d(O)

POD

Internal ADC Frequency − 120 128 140 kHz TJ = 25 °C

Internal ADC Frequency over

Temperature Range

Response Time of Output 3 − 5

− 110 128 150 kHz V

10 4 2 1

ms ms ms ms

= 4.5 V to 8.5 V

3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz C

= 10 nF, time from 10% to 90% of

final output voltage for a steplike signal B

step

Delay Time of Output 3 0.1 0.5 ms CL = 10 nF Power-Up Time (Time to reach

stabilized Output Voltage)

6 5 3 2

ms ms ms ms

3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 160 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 2 kHz C

= 10 nF, 90% of V

BW Small Signal Bandwidth (−3dB) 3 − 2 − kHz BAC < 10 mT;

3 dB Filter frequency = 2 kHz

OUTn

OUT

thJA

TO-92UT

Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096

peak-to-peak value exceeded: 5%

if more than 50% of the selected magnetic field range are used

Noise Output Voltage

Output Resistance over Recommended Operating Range

Thermal Resistance Junction to Soldering Point

3 − 36mV2) magnetic range = 90 mT 3 − 110Ω V

OUTLmax

≤ V

−−150 200 K/W

from 0 mT to B

OUT

≤ V

OUT

OUTHmin

max

Micronas 13

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HAL805 PRELIMINARY DATA SHEET

3.7. Magnetic Characteristics

= −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.

at T

Typical Characteristics for T

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

= 25 °C and VDD = 5 V.

Offset

∆B

Offset

Hysteresis

SR Magnetic Slew Rate 3

meff

Cflicker

Magnetic Offset 3 −101mTB = 0 mT, I

/∆T Magnetic Offset Change

due to T

Magnetic Hysteresis −20 0 20 µT Range = 30 mT, Filter = 500 Hz

Magnetic RMS Broadband Noise

Corner Frequency of 1/f Noise 3 − 20 Hz B = 0 mT Corner Frequency of 1/frms

Noise

3 − 10 −µT BW = 10 Hz to 2 kHz

3 − 100 Hz B = 65 mT, TJ = 25 °C

−15 0 15 µT/K B = 0 mT, I

− 2

3.8. Open Circuit Detection

at T

= −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C

4 12 25 50

= 0 mA, TJ = 25 °C

OUT

= 0 mA

OUT

− mT/ms Filter frequency = 80 Hz

Filter frequency = 160 Hz Filter frequency = 500 Hz Filter frequency = 1 kHz Filter frequency = 2 kHz

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

OUT

Output voltage at open V

Output voltage at open GND line

line

3 000.2V V

34.74.85VV

= 5 V

= 10 kΩ to GND

= 5 V

= 10 kΩ to GND

14 Micronas

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PRELIMINARY DATA SHEET HAL805

3.9. Typical Characteristics

–5

–10

–15

= –40 °C

= 25 °C

TA=150 °C

–20

–15 –10 –50 5101520

Fig. 3–2: Typical current consumption versus supply voltage

= 25 °C

= 5 V

–1.5 –1.0 –0.5 0.0 0.5 1.0 1.5

OUT

Fig. 3–4: Typical current consumption versus output current

= 5 V

–50 0 50 100 150 200

Fig. 3–3: Typical current consumption versus ambient temperature

OUT

–5

–3

–10

–15

–20

–25

–30

–35

–40

10 100 1000 10000Hz

Filter: 80 Hz Filter: 160 Hz Filter: 500 Hz

Filter: 2 kHz

signal

Fig. 3–5: Typical output voltage versus signal frequency

Micronas 15

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HAL805 PRELIMINARY DATA SHEET

–1

–0.8

–0.6

–0.4

–0.2

–0.0

0.2

0.4

0.6

0.8

1.0

45678

OUT/VDD

= 0.82

OUT/VDD

= 0.66

OUT/VDD

= 0.34

OUT/VDD

= 0.18

OUT/VDD

= 0.5

Fig. 3–6: Typical ratiometric error versus supply voltage

100

120

–50 0 50 100 150 200

°C

1/sensitivity

TC = 16, TCSQ = 8 TC = 0, TCSQ = 12 TC = –20, TCSQ = 12 TC = –31, TCSQ = 0

Fig. 3–7: Typical 1/sensitivity versus ambient temperature

1.0 TC = 16, TCSQ = 8

TC = 0, TCSQ = 12 TC = –20, TCSQ = 12

0.8

Offset

0.6

0.4

0.2

–0.0

–0.2

–0.4

–0.6

–0.8

–1

–50 0 50 100 150 200

Fig. 3–8: Typical magnetic offset versus ambient temperature

°C

1.0

0.8

INL

0.6

0.4

0.2

–0.0

–0.2

–0.4

–0.6

–0.8

–1

–40 –20 0 20 40

Range = 30 mT

Fig. 3–9: Typical nonlinearity versus magnetic field

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PRELIMINARY DATA SHEET HAL805

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to connect one ceramic 4.7 nF capacitor each between ground and the supply voltage, respecti vely the o utput voltage pin. In addition, the input of the controller unit should be pulled-down with a 4.7 kOhm resistor and a ceramic

4.7 nF capacitor. Please note that during programming , the sensor will

be supplied repeatedl y with the programming voltage of 12 V for 100 ms. All components conn ected to the

line at this time must be able to resist this voltage.

OUT

GND

4.7 k

Ω

4.7 nF

HAL805

4.7 nF 4.7 nF

4.3. Temperature Compensation

The relationship between the temperature coefficient of the magnet and the corresponding TC an d TCSQ codes for linear compens ation is given in the following table. In addition to the linear chan ge of the magnetic field with temperature, the cu rvature can be adjusted as well. For this purpose, other TC and TCSQ combi nations are required whi ch are not shown in the table. Please contact MICRONAS for more detailed information on this higher order temperature compensation.

The HAL 800 and HAL 805 contain the same temperature compensation cir cuits. If an o ptimal s etting for the HAL 800 is already available, the same settings may be used for the HAL 805.

Temperature

TC TCSQ Coefficient of Magnet (ppm/K)

400 31 6 300 28 7 200 24 8

Fig. 4–1: Recommended application circuit

4.2. Use of two HAL 805 in Parallel

Two different HAL 805 sens ors which are operated in parallel to the same supply and ground line can be programmed individually. In order to select the IC which should be programmed, bo th Hal l ICs ar e inac tivated by the “Deactivate” command on the common supply line. Then, the appropri ate IC is activated by an “Activate” pulse on its output . Only the activated sensor will react to all following read, write, and program commands. If the second IC has to be programmed, the “Deactivate” command is sent agai n, and the second IC can be selected.

OUT A & Select A

OUT B & Select B

10 nF

HAL 805

Sensor A Sensor B

HAL 805

100 21 9

01810

−50 17 10

−90 16 11

−130 15 11

−170 14 11

−200 13 12

−240 12 12

−280 11 12

−320 10 13

−360 9 13

−410 8 13

−450 7 13

−500 6 14

−550 5 14

4.7 nF

4.7 nF GND

−600 4 14

−650 3 14

Fig. 4–2: Parallel operation of two HAL 805

−700 2 15

−750 1 15

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HAL805 PRELIMINARY DATA SHEET

Temperature

TC TCSQ Coefficient of Magnet (ppm/K)

−810 0 15

−860 −116

−910 −216

−960 −316

−1020 −417

−1070 −517

−1120 −617

−1180 −718

−1250 −818

−1320 −919

−1380 −10 19

−1430 −11 20

−1500 −12 20

−1570 −13 20

−1640 −14 21

−1710 −15 21

4.4. Undervoltage Behavior

In a voltage range below 4.5 V to approximately 3.5 V, the operation of the HAL 805 is typically given and predictable for the most sensors. So me of the parameters may be out of the speci ficat ion . B el ow abo ut 3.5 V, the digital processing is reset. If the supply voltage once again rises a bove about 3.5 V, a s tar tup time of about

µs elapses for the digital processing to occur. As

20 long as the supply voltage is still above about 2.8 V, the analog output is kept at its last valid value ratiometric to V

. Below about 2.5 V, the entire sensor will

reset.

4.5. Ambient Temperature

Due to the intern al power dissipation, th e temperature on the silicon chi p (junction temperature T

) is higher

than the temperature outside the package (ambient temperature T

= TA + ∆T

At static conditions, the following equation is valid:

∆T = I

* VDD * R

thJA

For typical values, use the typical parameters. For worst case calculation, use the max. parameters for I

and Rth, and the max. value for VDD from the appli-

cation.

−1780 −16 22

−1870 −17 22

−1950 −18 23

−2030 −19 23

−2100 −20 24

−2180 −21 24

−2270 −22 25

−2420 −24 26

−2500 −25 27

−2600 −26 27

−2700 −27 28

−2800 −28 28

−2900 −29 29

−3000 −30 30

−3100 −31 31

For V temperature difference

For all sensors, the junction tem perature T fied. The maximum ambient temperature T

= 5.5 V, Rth = 200 K/W and IDD = 10 mA the

∆T = 11 K.

is speci-

can be

Amax

calculated as: T

Amax

= T

Jmax

−∆T

4.6. EMC and ESD

The HAL 805 is designe d for a stabilized 5 V suppl y. Interferences and disturbances conducted along the 12 V onboard system (product standards DIN40839 part 1 or ISO 7637 part 1) are not relevant for these applications.

For applications with disturbances by capacitive or inductive coupling on the supply line or radiat ed disturbances, the application circuit shown in Fig. 4–1 is recommended. Applications with this arrangement passed the EMC tests acc ording to the product standards DIN 40839 pa rt 3 (Ele ctrical transient transmission by capacitive or inductive coupling) and part 4 (Radiated disturbances).

Please contact M icronas for the detailed investigation reports with the EMC and ESD results.

18 Micronas

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PRELIMINARY DATA SHEET HAL805

5. Programming of the Sensor

5.1. Definition of Programming Pulses

The sensor is addre ssed by modulating a serial telegram on the supply voltage. The se nsor answers with a serial telegram on the output pin.

The bits in the serial telegram have a different bit time for the V V

-line is defined through the length of the S ync Bit

-line and the output. The bit time for the

at the beginning of each tel egram. The bit time for the output is defined through the Acknowledge Bit.

A logical “0” is coded as no voltage change within the bit time. A logical “1” is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs.

5.2. Definition of the Telegram

Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), th e Comm and Parity B it (CP), 4 bits for the Address ( ADR), and the Address Parity Bit (AP).

– Read a register (see Fig. 5–3)

After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output.

– Programming the EEPROM cells (see Fig. 5–4)

After evaluating this command, the sensor answers with the Acknowledge Bit. After the delay time t the supply voltage ris es up to the p ro gramming voltage.

– Activate a sensor (see Fig. 5–5))

If more than one sensor is conne cted to the supply line, selection ca n be done by first deactivating all sensors. The output of all sensors will be pulled to ground by the internal 10 k

Ω resistors. With an Acti-

vate pulse on the appropria te output pin, an ind ividual sensor can be selected. A ll following co mm and s will only be accepted from the activated sensor.

logical 0

DDH

DDL

There are 4 kinds of telegrams:

DDH

DDL

– Write a register (see Fig. 5–2)

After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been proces sed, th e sens or answers

logical 1

with an Acknowledge Bit (logical 0) on the output.

Fig. 5–1: Definition of logical 0 and 1 bit

Table 5–1: Telegram parameters

Symbol Parameter Pin Min. Typ. Max. Unit Remarks

t t t

DDL

DDH

Supply Voltage for Low Level during Programming

Supply Voltage for High Level during Programming

Rise time 1 0.05 ms Fall time 1 0.05 ms Bit time on V

155.66V

16.88.08.5V

1 1.7 1.75 1.8 ms tp0 is defined through the Sync Bit

pOUT

DDPROG

PROG

Bit time on output pin 3 2 3 4 ms t

Voltage Change for logical 1 1, 3 50 65 80 % % of t Supply Voltage for

Programming the EEPROM Programming Time for EEPROM 1 95 100 105 ms

1 11.95 12 12.1 V

pOUT

Acknowledge Bit

is defined through the

or t

pOUT

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HAL805 PRELIMINARY DATA SHEET

Table 5–1: Telegram parameters, continued

Symbol Parameter Pin Min. Typ. Max. Unit Remarks

act

Rise time of programming voltage 1 0.2 0.5 1 ms Fall time of programming voltage 1 0 1 ms Delay time of programming voltage

10.50.71ms

after Acknowledge Voltage for an Activate pulse 3 3 4 5 V Duration of an Activate pulse 3 0.05 0.1 0.2 ms

WRITE

Sync COM CP ADR AP DAT DP

OUT

Fig. 5–2: Telegram for coding a Write command

READ

Sync COM CP ADR AP

Acknowledge

OUT

Fig. 5–3: Telegram for coding a Read command

DDPROG

ERASE, PROM, LOCK, and LOCKI

Sync COM CP ADR

Acknowledge

OUT

Fig. 5–4: Telegram for coding the EEPROM programming

DA T DPAcknowledge

PROG

OUT

ACT

Fig. 5–5: Activate pulse

20 Micronas

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PRELIMINARY DATA SHEET HAL805

5.3. Telegram Codes

Sync Bit

Each telegram star ts wi th the Sync Bit. Thi s log ical “0” pulse defines the exact timing for t

Command Bits (COM)

The Command code contains 3 bits and is a binary number. Table 5–2 shows the available commands and the corresponding codes for the HAL 805.

Command Parity Bit (CP)

This parity bit is “1” if the number of zeros within the 3 Command Bits is uneven. The parity bit is “0”, if the number of zeros is even.

Address Bits (ADR)

The Address code contains 4 bits and is a binary number. Table 5–3 shows the available addresses for the HAL 805 registers.

Data Bits (DAT)

The 14 Data Bits contain the register information. The registers use different number formats for the

Data Bits. These formats are explained in Section 5.4. In the Write command, the last bits are valid. If, for

example, the TC register (6 bits) is written, only the last 6 bits are valid.

In the Read command, the first bits are valid. If, for example, the TC register (6 bits) is read, only the first 6 bits are valid.

Data Parity Bit (DP)

This parity bit is “1” if the number of zeros within the binary num ber is even. The p arity bit is “0” if the number of zeros is uneven.

Acknowledge

After each telegram, the output answers with the Acknowledge signal. This logical “0” pulse defines the exact timing for t

pOUT

Address Parity Bit (AP)

This parity bit is “1” if the number of zeros within the 4 Address bits is uneven. The par ity b it is “0” if the number of zeros is even.

Table 5–2: Available commands

Command Code Explanation

READ 2 read a register WRITE 3 write a register PROM 4 program all nonvolatile registers (except the lock bits) ERASE 5 erase all nonvolatile registers (except the lock bits) LOCKI 6 lock MICRONAS lockable register LOCK 7 lock the whole device and switch permanently to the analog-mode Please note:

The MICRONAS lock bit (LOCKI) has already been set during production and cannot be reset.

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HAL805 PRELIMINARY DATA SHEET

5.4. Number Formats

Binary number:

The most significant bit i s given as first, the least significant bit as last digit.

Example:

Signed binary number:

The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign).

Example:

101001 represents 41 decimal.

0101001 represents +41 decimal 1101001 represents −41 decimal

Table 5–3: Available register addresses

Bits

Format Customer Remark

Two-complementary number:

The first digit of positive numbers is “0”, the rest of the number is a binary number. Negative numbers start with “1”. In or der to calc ulate the ab solut e value of the number, calculate the complement of the remaining digits and add “1”.

Example:

0101001 represents +41 decimal 1010111 represents −41 decimal

CLAMP-LOW 1 10 binary read/write/program Low clamping voltage CLAMP-HIGH 2 11 binary read/write/program High clamping voltage VOQ 3 11 two compl.

binary SENSITIVITY 4 14 signed binary read/write/program MODE 5 6 binary read/write/program Range and filter settings LOCKR 6 1 binary lock Lock Bit ADC-READOUT 7 14 two compl.

binary TC 11 6 signed binary read/write/program TCSQ 12 5 binary read/write/program DEACTIVATE 15 12 binary write Deactivate the sensor

MICRONAS registers (read only for customers)

Bits

Format Remark

read/write/program

read

OFFSET 8 4 two compl. binary ADC offset adjustment FOSCAD 9 5 binary Oscillator frequency adjustment SPECIAL 13 6 special settings IMLOCK 14 1 binary Lock Bit for the Micronas registers

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PRELIMINARY DATA SHEET HAL805

5.5. Register Information

CLAMP-LOW

– The register range is from 0 up to 1023. – The register value is calculated by:

Low Clamping Voltage

* 2048CLAMP-LOW =

CLAMP-HIGH

– The register range is from 0 up to 2047. – The register value is calculated by:

High Clamping Voltage

VOQ

– The register range is from

−1024 up to 1023.

– The register value is calculated by:

* 1024VOQ =

ADC-READOUT

– This register is read only. – The register range is from

−8192 up to 8191.

DEACTIVATE

– This register can only be written. – The register has to be written with 2063 decimal

(80F hexadecimal) for the deactivation.

– The sensor can be r eset with an Activate pulse on

the output pin or by switching off and o n the suppl y voltage.

5.6. Programming Information

* 2048CLAMP-HIGH =

If the content of any register (except the lock registers) is to be changed, th e desired value must first be written into the correspond ing RAM registe r. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM.

Permanently storin g a value in the EEP ROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands is not important. ERASE and PROM act on all registers in parallel.

SENSITIVITY

– The register range is from

−8192 up to 8191.

– The register value is calculated by:

SENSITIVITY =

Sensitivity

2048

TC and TCSQ

– The TC register range is from

−31 up to 31 .

– The TCSQ register range is from 0 up to 31. Please refer Section 4.2. on page 17 for the recom-

mended values.

MODE

– The register range is f rom 0 up to 63 and conta ins

the settings for FILTER and RANGE:

MODE = FILTER * 8 + RANGE

If all HAL 805 registers are to be cha nged, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end.

Please refer Section 2.2. on page 7 for the available FILTER and RANGE values.

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HAL805 PRELIMINARY DATA SHEET

6. Data Sheet History

1. Preliminary data sheet: “HAL805 Programmable Linear Hall Effect Sensor”, Feb. 2, 2000, 6251-513-1PD. First release of the preliminary data sheet.

Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: [email protected] Internet: www.micronas.com

Printed in Germany Order No. 6251-513-1PD

All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infr ingements or other right s of third parties whic h may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its conte nt, at any t ime, withou t obligatio n to noti fy any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH .

24 Micronas