Datasheet HA22033 Datasheet (HIT)

HA22033

GaAs MMIC

Low Noise Amplifier for Micro Wave Application

Features

• Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz)

• Low voltage and low current operation (2.7V, 1.7mA typ.)

• Low noise (1.4 dB typ. @1.5GHz)

• High power gain (14 dB typ. @1.5GHz)

• Built–in matching circuits (50Ω)

• Small surface mount package (MPAK–5)

ADE-207-266 (Z)

1st. Edition

October 1998

Outline

MPAK–5

This document may, wholly or partially, be subject to change without notice.

This Device si sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.

CAUTION

This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not

HA22033

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Supply voltage Vdd 5 V
Maximum current Idd 6 mA
Power dissipation Pd 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +125 °C
Operation temperature Topr –20 to +70 °C
Maximum input power Pin max +15 dBm

Electrical Characteristics (Ta = 25°C, Vdd = 2.7V)

Item Symbol Min Typ Max Unit Test Conditions Pin

Quiescent current Idd — 1.7 2.5 mA No signal
Power gain PG 12 14 — dB f = 1.5 GHz
Noise figure NF — 1.4 2 dB f = 1.5 GHz

Typical Performance (Ta = 25°C, Vdd = 2.7V)

Item Symbol Typ Unit Test Conditions Pin

VSWR (input) VSWR in 1.5 — f = 1.5 GHz 4
VSWR (output) VSWR out 2.2 — f = 1.5 GHz 1
3rd order intermodulation

distortion

IM3 50 dB f = 1.5 GHz, Pin = –30 dBm

Block Diagram

HA22033

in

Vdd

1.5pF

5.6nH

100pF

4

5

3

2

1

Cs

100pF

GND

out

HA22033

Pin Arrangement

G E A

Monthly code (variable)

Mark type

1

GEA

5

2

3

Top View

Pin No. Pin name Function

1 RF out RF output
2 GND Ground
3 Cs Bypath capacitor (>100 pF)
4 RF in RF input
5 Vdd Power supply

4

Pattern Layout

HA22033

scale 4/1
: φ0.5mm

: φ0.3mm

RF in

Front Side view of PCB Pattern

100pF

5.6nH

1.5pF
Vdd

Front Side view of Part Layout(1.5GHz)

cs

GEA

100pF

scale 4/1

: Capacitor
: Inductor

RF out

ER=4.8
H=1mm

HA22033

Main Characteristics

20

15

10

5

Power Gain PG (dB)

0

1.0 1.5 2.0 2.5

6

5

Power Gain vs. Frequency Noise Figure vs. Frequency

Vdd = 2.7 V
Ta = +25°C

Frequency f (GHz)

VSWR vs. Frequency

Vdd = 2.7 V
Ta = +25°C

4

3

2

1

Noise Figure NF (dB)

Vdd = 2.7 V
Ta = +25°C

0

1.0 1.5 2.0 2.5
Frequency f (GHz)

Output Power, 3rd Order Inter–

modlation Distortion vs. Input Power

20

Vdd = 2.7 V
f = 1.5 GHz
ud = 1.5006 GHz

0

Ta = +25°C

4

VSWR

3

2

1

1.0 1.5 2.0 2.5
Frequency f (GHz)

output

input

–20

–40

–60

Output Power Pout (dBm)

–80

–60 –50

Input Power Pin (dBm)

Pout

–30 –20 –10 0 10

–40

im3

HA22033

Power Gain vs. Supply Voltage

20

f = 1.5 GHz
Ta = +25°C

15

10

5

Power Gain PG (dB)

0

2.5 3 3.5 4 4.5

2

Supply Voltage Vdd (V)

5

4

3

VSWR

VSWR vs. Supply Voltage

f = 1.5 GHz
Ta = +25°C

Noise Figure vs. Supply Voltage

4

f = 1.5 GHz
Ta = +25°C

3

2

1

Noise Figure NF (dB)

0

5

2 3 3.5 4 4.5 5

2.5
Supply Voltage Vdd (V)

Pout @ 1dB Gain Compression, 3rd Order

Inter–cept Point (out) vs. Supply Voltage

20

f = 1.5 GHz
ud = 1.5006 GHz
Ta = +25°C

15

10

5

IP3o

2

1

2.5 3 3.5 4 4.5

2

Supply Voltage Vdd (V)

output

input

P1dB, IP3o (dBm)

0

–5

5

2 3 3.5 4 4.5 5

P1dB

2.5
Supply Voltage Vdd (V)

HA22033

20

15

10

Power Gain PG (dB)

Power Gain vs. Temperature

Vdd =2.7 V
f = 1.5 GHz

5

0
–250255075

Ambient Temperature Ta (°C)

VSWR vs. Temperature

5

Vdd = 2.7 V
f = 1.5 GHz

4

Noise Figure vs. Temperature

4

Vdd = 2.7 V
f = 1.5 GHz

3

2

1

Noise Figure NF (dB)

0
–250255075

Ambient Temperature Ta (°C)

Pout @ 1dB Gain Compression, 3rd Order

Inter–cept Point (out) vs. Ambient Temperature

20

Vdd = 2.7 V
f = 1.5 GHz
ud = 1.5006 GHz

15

3

VSWR

output

2

input

1
–250255075

Ambient Temperature Ta (°C)

10

5

P1dB, IP3o (dBm)

0

–5

–250255075

Ambient Temperature Ta (°C)

P1dB

IP3o

HA22033

Quiescent Current vs. Supply Voltage

5

Ta = +25°C

4

3

2

1

Quiescent Current Idd (mA)

0

2 3 3.5 4 4.5 5

2.5
Supply Voltage Vdd (V)

Quiescent Current vs.
Ambient Temperature

5

Vdd = 2.7 V

4

3

2

1

Quiescent Current Idd (mA)

0

–250255075

Ambient Temperature Ta (°C)

HA22033

Package Dimentions

2.9 ± 0.2

0.95 0.95

0.4 ± 0.1

1.9

0.3

+ 0.2

0.4 ± 0.1

– 0.1

1.1

0.6

0.16

+ 0.1
– 0.06

Unit: mm

0.4 ± 0.1

+ 0.2

1.6

– 0.1

0.6

+ 0.2

2.8

– 0.3

0 to 0.1

Hitachi code

EIAJ

JEDEC

MPAK–5

—
—

HA22033

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.

2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.

HA22033

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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

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