Page 1
HA22039
GaAs IC
Low Distortion Mixer for Micro Wave Application
Features
• Suitable for low distortion of Micro Wave Application
• Low voltage and low current operation (3V, 7mA typ.)
• Low insertion loss (1.0 dB typ. @800MHz)
• Small surface mount package (MPAK–6)
Outline
ADE-207-271 (Z)
Preliminary
1st. Edition
August 1999
MPAK—6
This Device si sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
CAUTION
This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not
treat them mechanically in the manner which might expose to the Aer. And it should never be thrown
out with general industrial or domestic wastes.
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HA22039
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Supply voltage Vdd 5 V
Maximum current Idd 60 mA
Power dissipation Pd 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +125 °C
Operation temperature Topr –30 to +85 °C
Electrical Characteristics (Ta = 25°C, Vdd = 3V, Idd = 7mA)
Item Symbol Min Typ Max Unit Test Conditions
Insertion loss CL 0 1 3 dB f = 800 MHz, PRF = -10dBm, Plo = 0dBm
Typical Performance (Ta = 25°C, Vdd = 3V, Idd = 7mA)
Item Symbol Typ Unit Test Conditions
3rd order input intercept point IP3in 12 dBm f = 800 MHz, PRF = -10dBm, Plo = 0dBm
Noise Figure (DSB) NF 7 dB
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Block Diagram
HA22039
Lo in
Vd
IF out
*
0.16φ, 7.5T
**
0.16φ, 5.5T
*
1
*
2
3
*
6
5
4
10k
*
*1000pF
RF in
*
*
0.16φ, 7.5T
100
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HA22039
Pin Arrangement
1
2
3
GG : Mark Type
a to d : Year Code (variable)
e to f : Monthly Code (variable)
Pin No. Pin name Function
1 G1 Gate
2 D1 Drain
3 D2 Drain
4 S2 Source
5 S1 Source
6 G2 Gate
GG
e f g h
Top View
a b c d
6
5
4
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Pattern Layout
HA22039
RF
Front Side view of PCB Pattern
IF
GG
Local
Front Side view of Part Layout
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HA22039
Main Characteristics
Insertion loss vs. Input Power
8
fRF = 800MHz
fLo = 900MHz
6
4
Insertion loss (dB)
2
0
-20 -10 0 10 20 -20 -10 0 10 20
Input Local Power (dBm)
NF vs. Input Power
20
fRF = 800MHz
fLo = 900MHz
15
Vdd = 3V
Idd = 7mA
PRF = -10dBm
Ta = 25°C
Vdd = 3V
Idd = 7mA
PRF = -10dBm
Ta = 25°C
20
15
10
IP3in (dBm)
5
0
8
6
IP3in vs. Input Power
fRF = 800MHz
fLo = 900MHz
Vdd = 3V
Idd = 7mA
PRF = -10dBm
Ta = 25°C
Input Local Power (dBm)
Insertion loss vs. Supply Voltage
fRF = 800MHz
fLo = 900MHz
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Ta = 25°C
10
Noise Figure (dB)
5
0
-20-1001020 2345
Input Local Power (dBm)
4
Insertion loss (dB)
2
0
Supply Voltage (V)
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HA22039
IP3in vs. Supply Voltage
20
fRF = 800MHz
fLo = 900MHz
15
10
IP3in (dBm)
5
0
234 5
Supply Voltage (V)
Insertion loss vs. Operation current
8
fRF = 800MHz
fLo = 900MHz
6
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Ta = 25°C
Vdd = 3V
PRF = -10dBm
PLo = 0dBm
Ta = 25°C
NF vs. Supply Voltage
20
fRF = 800MHz
fLo = 900MHz
15
10
Noise Figure (dB)
5
0
234 5
Supply Voltage (V)
IP3in vs. Operation current
20
fRF = 800MHz
fLo = 900MHz
15
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Ta = 25°C
4
Insertion loss (dB)
2
0
246 108246108
Operation current (mA)
10
IP3in (dBm)
5
0
Operation current (mA)
Vdd = 3V
PRF = -10dBm
PLo = 0dBm
Ta = 25°C
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HA22039
NF vs. Operation current
20
fRF = 800MHz
fLo = 900MHz
15
10
Noise Figure (dB)
5
0
246810
Operation current (mA)
IP3in vs. Temparature
20
fRF = 800MHz
fLo = 900MHz
15
Vdd = 3V
PRF = -10dBm
PLo = 0dBm
Ta = 25°C
Insertion loss vs. Temparature
8
fRF = 800MHz
fLo = 900MHz
6
4
Insertion loss (dB)
2
0
-300 306090
Ambient Temparature (°C)
NF vs. Temparature
20
fRF = 800MHz
fLo = 900MHz
15
Vdd = 3V
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Vdd = 3V
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
10
IP3in (dBm)
5
0
Vdd = 3V
Idd = 7mA
PRF = -10dBm
PLo = 0dBm
Ambient Temparature (°C)
10
Noise Figure (dB)
5
0
-300 306090-300 306090
Ambient Temparature (°C)
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HA22039
Insertion loss vs. Input Power
8
fRF = 800MHz
fLo = 900MHz
6
4
Insertion loss (dB)
2
0
-20 -10 0 10 -20 -10 0 10
Vdd = 3V
Idd = 7mA
PLo = 0dBm
Ta = 25°C
RF Input Power (dBm)
20
15
10
IP3in (dBm)
5
0
IP3in vs. Input Power
fRF = 800MHz
fLo = 900MHz
Vdd = 3V
Idd = 7mA
PLo = 0dBm
Ta = 25°C
RF Input Power (dBm)
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HA22039
Package Dimentions
2.9 ±0.2
0.95 0.95
0.3 ±0.1
1.9
0.3
+ 0.2
0.4 ±0.1
– 0.1
1.1
0.6
0.16
+ 0.1
– 0.06
Unit: mm
0.3 ±0.1
+ 0.2
1.6
– 0.1
0.6
+ 0.3
2.8
– 0.2
0 to 0.15
Hitachi Code
EIAJ
JEDEC
MPAK–6
—
—
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HA22039
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.
2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.
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HA22039
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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