Datasheet HA12231FP Datasheet (HIT)

Page 1
HA12231FP
Audio Signal Processor for Car Deck (PB 1 Chip)
ADE-207-327A (Z)
2nd Edition
Jan. 2001
Description
HA12231FP is silicon monolithic bipolar IC providing PB equalizer system and music sensor system in one chip.
PB equalizer × 2 channel
Music sensor × 1 channel
Line amp. × 2 channel
Line mute × 2 channel
Features
No use external parts for PB equalizer. (Fixed characteristics built-in)
Available to change music sensing level by external resistor.
Available to change frequency response of music sensor by external capacitor.
Different type of PB equalizer characteristics selection (120 µs/70 µs) is available.
Line mute ON/OFF is avalable.
This IC is strong for a cellular phone noise.
Ordering Information
Functions
Product Package PBOUT-Level PB-EQ Music Sensor Mute
HA12231FP FP-20DA 450 mVrms ❍❍❍
Page 2
HA12231FP
Pin Description, Equivalent Circuit (VCC = 9 V, A system of single supply voltage,
Ta = 25°C, No Signal, The value in the table shows typical value.)
Pin No. Pin Name Note Equivalent Circuit Description
16 TAI(L) V = V
CC
5 TAI(R) 14 RIP V = VCC/2
13 MS DET V = V
CC
/2
V
100 k
VCC/2
V
CC
V
GND
Tape input
Ripple filter
Time constant pin for rectifier
GND
15 PBOUT(L) V = VCC/2
V
CC
V
GND
PB output
6 PBOUT(R) 1 VREF V = VCC/2
V
CC
V
GND
Reference output
17 EQOUT(L) V = VCC/2 Equalizer output (120 µ) 4 EQOUT(R)
Note: MS: Music Sensor
2
Page 3
HA12231FP
Pin Description, Equivalent Circuit (VCC = 9 V, A system of single supply voltage,
Ta = 25°C, No Signal, The value in the table shows typical value.) (cont.)
Pin No. Pin Name Note Equivalent Circuit Description
11 V 19 FIN(L)
18 RIN(L) 3 RIN(R) 2 FIN(R) 9 Mute
10 FOR/REV 8 120/70 12 MS
CC
Power supply
Equalizer input
V
Mode control input
22 k
100 k
GND
MS V
I
CC
MS output (to MPU) *
200
7 MS G
20 GND GND pin Note: MS: Music Sensor
V
V = VCC/2
100 k
D GND
MS gain pin *
V
90 k
3
Page 4
HA12231FP
Block Diagram
GNDVREF
FIN(L)
RIN(L)
EQOUT(L)
TAI(L)
PBOUT(L)
RIP
+
MS DET
+
MS
CC
DV
V
CC
20 19 18 17 16 15 14
+
+
1
2 3 4 5
FIN(R)
RIN(R)
I.A.
I.A.
EQOUT(R)
LPF
TAI(R)
+
MA
6 7 8 9
PBOUT(R)
V
MS G
13 12 11
MS
RECT
+
120/70
Mute
S/R
10
FOR/REV
4
Page 5
HA12231FP
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit Note
Supply voltage V Power dissipation Pd 400 mW Ta 85°C Operating temperature Topr 40 to +85 °C Storage temperature Tstg 55 to +125 °C
Max 15 V
CC
5
Page 6
HA12231FP
Electrical Characteristics
Re-
mark
L
R
L
R
Unit
= 9 V, PBOUT Level = 450 mVrms (= 0 dB))
CC
Max
Typ
(Ta = 25°C, V
Min
PBOUT
level(dB)
1

15 6
16
516615
5
dB
dB
mA 9
24.5
6.0
23.5
13.0
22.5
12.050.0
No signal
THD = 1%
00
516615
%
0.3
0.05
15 6 19 2
dB
60.0
12
11
6
17171717 444
15
19
19
19/18
2
2
2/3
dB
dB
dB
43.0
39.0
35.0
40.0
36.0
32.0
37.0
33.0
29.0
120µs
120µs
70µs
000
Test Condition Application Terminal
1k
1k1k
1k
1k
10k
fin(Hz) Other
10k
1
17
4174
4
19/18
19/18
19/18 2/32/3
2/3
%
µVrms
mVrms
0.5
2.0
0.1
1.2
600
300
THD = 1%
Rg = 680, Din-Audio Filter
0
(0)
1k
1k
(1k)
12
15 6
16 5
dB
10.0
14.0
18.0
5k
12
15 6
16 5
V
1.5
1.0
0
5k
8, 9,
12
15 6
12
16
5
V
dB
µA
2.01.0
0.0
80.0
0.2
70.0
No signal
12
1k
10
CC
V
3.5
IC Condition InputSpecification Output
OUTPUT
INPUT
Item Symbol
PBOUT
PBOUTPBOUT
PBOUT
TAI
TAITAI
FIN
IA
V
Q
Vomax
I
G
Quiescent current
Input AMP. gain
CT RL
T.H.D. THD
Channel separation
Signal handling
EQOUT
EQOUT
EQOUT
FIN
FIN
FIN/RIN
EQ 1k
EQ 10k(1)
EQ 10k(2)
V
V
V
G
G
G
PB-EQ gain
PBOUT
EQOUT
EQOUT
EQOUT
FIN/RIN
FIN/RIN
FIN/RIN
OM
THD-EQ
VN
PB-EQ maximum output V
PB-EQ THD
Noise voltage level converted
PBOUT
MSOUT
TAI
TAITAI
ON
OL
V
in input
MS sensing level
MS output low level V
MSOUT
PBOUT
MSOUT
IH
IL
IOHMute
V
V
= 7.2 V
CC
MS output leak current
MUTE attenuation
Control voltage
Note: 1. V
6
Page 7
Test Circuit
PBL
DC VM
SW13
MS
PBR
AC VM2
Distortion
HA12231FP
Noise
meter
scope
Oscillo
analyzer
SW12
NOISE METER
WITH CCIR/ARM FILTER
Lch
Rch
AND DIN/AUDIO FILTER
EQ
SW8
PB
R11
10k
+
C11
0.47µ
DC SOURCE1
C7
+
R8
R9
330k
C8
0.33µ
+
1µ
C9
10k
R10
SW6
C12
0.1µ
R12
R13
5.1k
5.1k R14
680
22µ
C13
R15
680
++
22µ
C14
100µ
3.9k
C10
V
CC
MS
MS DET
13 12 11
MS
RECT
RIP
MA
+
PBOUT(L)
+
2.2µ
TAI(L)
I.A.
LPF
EQOUT(L)
RIN(L)
+
FIN(L)
GND VREF
20 19 18 17 16 15 14
FOR/REV
Mute
120/70
MS G
PBOUT(R)
TAI(R)
I.A.
EQOUT(R)
RIN(R)
+
FIN(R)
DC SOURCE2
DC SOURCE3
OFF ON
0.01µ
680
680
+
+
EXT
C3
R4
C2
C1
SW11
R7
R6
0.1µ
5.1k
22µ
22µ
FOR REV
24k
10k
EXT
+
C4
SW7
PB
EQ
R5
10k
0.47µ
10
SW10
EXT
SW9
120 70
V
C6
+
6 7 8 9
C5
2.2µ SW5
R3
5.1k R2
2 3 4 5
R1
1
TAI
RINSW3
FIN
FIN
RIN
SW4
TAI
Rch
Lch
SW2
OFFON
SW1
AUDIO SG
2. Capacitor tolerance ±1%
AC VM1
Notes: 1. Resistor tolerance ±1%
3. Unit R: , C: F
7
Page 8
HA12231FP
Functional Description
Power Supply Range
HA12231FP is designed to operate on single supply only.
Table 1 Supply Voltage Range
Product Single Supply
HA12231FP 7.2 V to 12.0 V
Reference Voltage
HA12231FP provides the reference voltage of half the supply voltage that is the signal grounds. As the peculiarity of this device, the capacitor for the ripple filter is very small about 1/100 compared with their usual value. The block diagram is shown as figure 1.
11 V
CC
+
MS block
20
14
+
RIP
C1 1µ
+
1
VREF to Line Amp.
: Internal reference voltage
Figure 1 The Block Diagram of Reference Supply Voltage
8
Page 9
HA12231FP
Operating Mode Control
HA12231FP provides fully electronic switching circuits. And each operating mode control are controlled by parallel data (DC voltage).
When a power supply of this IC is cut off, for a voltage, in addition to a mode control terminal even though as do not destruct it, in series for resistance.
Table 2 Threshold Voltage (VTH)
Pin No. Lo Hi Unit Test Condition
8, 9, 10 0.2 to 1.0 3.5 to V
CC
Table 3 Switching Truth Table
Pin No. Pin Name Low High
8 120/70 120 µ (Normal) 70 µ (Metal or Chrome) 9 Mute Mute OFF Mute ON 10 FOR/REV Forward Reverse
Notes: 1. Each pins are on pulled down with 100 k internal resistor.
Therefore, it will be low-level when each pins are open.
2. Over shoot level and under shoot level of input signal must be the standardized. (High: V
3. Reducing pop noise is so much better for 10 k to 22 k resisitor and 1 µF to 22 µF capacitor shown figure 2.
, Low: 0.2 V)
CC
V
Input Pin Measure
V
Input Pin
10 to 22 k
+
1 to 22 µF
MPU
Figure 2 Interface for Reduction of Pop Noise
9
Page 10
HA12231FP
Input Block Diagram and Level Diagram
60mVrms (22.2dBs)
EQOUT
FIN
RIN
VREF
EQ Amp.
+
PBIN
0.6mVrms (−62.2dBs)
R1
5.1k
R2
5.1k
PBOUT Level HA12231FP: 450 mVrms (4.7 dBs)
C1
0.1µF
TAI
30mVrms
(28.2dBs)
the other channel
The each level shown above is typical value when offering PBOUT level to PBOUT pin. (EQ Amp. Gv = 40 dB, f = 1 kHz)
Input Amp.
+
23.5dB
0dB
MUTE
PBOUT
Figure 3 Input Block Diagram
Adjustment of Playback Reference Operate Level
After replace R1 and R2 with a half-fix volume of 10 k, adjust playback reference operate level.
10
Page 11
HA12231FP
The Sensitivity Adjustment of Music Sensor
Adjusting MS Amp. gain by external resistor, the sensitivity of music sensor can set up. The music sensor block diagram is shown in figure 4, and frequency response is shown in figure 5.
S/R
V
CC
REX2 REX1 CEX2
16 7 13
TAI(L)
CEX1
+
R1
330k
23.5dB
6dB
LPF
25kHz
90k
+
33.3k
3.5dB
MS Amp.
66.7k
23.5dB
TAI(R)
5
MS DETMS Gv
RECT
+
C1
0.33µF
MS
GND
12
20
DV
CC
Micro computer
R
L
Figure 4 Music Sensor Block Diagram
f
G
V2
G
V1
(dB)
V
G
10 100k25k10k1k
3
100
Figure 5 Frequency Response
Repeat mode (REP)
f
1
Search mode (SER)
f (Hz)
f
4
f
2
11
Page 12
HA12231FP
1. Search mode
GV1 = (23.5dB 3.5dB) + 20log 1 + [dB]
f1 = [Hz], f2 = 25k [Hz]
2π CEX2 REX2
1
2. Repeat mode
GV2 = (23.5dB 3.5dB) + 20log 1 + [dB]
f3 = [Hz], f4 = 25k [Hz]
2π CEX1 REX1
1
The sensitivity of music sensor (S) is computed by the formula mentioned below.
S = 12.7 GV[dB]
S is 6 dB down in case of one-side channel.
90k
REX2
90k
REX1
Notes: 1. Search mode: GV1, Repeat mode: G
V2
2. Standard level of TAI pin (Dolby level correspondence) = 30 mVrms
3. Standard sensing level of music sensor = 130 mVrms
S (one side
Item REX1, 2 CEX1, 2 G
Search mode 24 k 0.01 µF 33.5 dB 663 Hz 25 kHz 14.8 dB 20.8 dB Repeat mode 2.4 k 1 µF 51.7 dB 66.3 Hz 25 kHz 33.0 dB 39.0 dB
Note: This MS presented hysteresis lest MS(OUT) terminal should turn over again High level or Low level,
in case of thresh S level constantly.
V1, 2
f
1, 3
f
2, 4
channel)
S (both channel)
Music Sensor Time Constant
1. Sensing no signal to signal (Attack) is determined by C1, 0.01 µF to 1 µF capacitor C1 can be
applicable.
2. Sensing signal to no signal (Recovery) is determined by C1 and R1, however preceding (1), 100 k to 1 M can be applicable.
Music Sensor Output (MS(OUT))
As for the internal circuit of music sensor block, music sensor output pin is connected to the collector of NPN type directly, therefore, output level will be “high” when sensing no signal. And output level will be “low” when sensing signal.
DV
MS(OUT)LO*
IL =
CC
* MS(OUT)
R
L
: Sensing signal (about 1V)
LO
Note: Supply voltage of MS(OUT) pin must be less than VCC voltage.
12
Page 13
Characteristic Curves
HA12231FP
0
EQOUT(L), VCC = 9 V, Vin = 0 dBm, 120 µs
10 toward Cellular phone noise
20
30
40
EQOUT Noise Output (dBs)
50
60
100 100001000
0
EQOUT(L), VCC = 9 V, 120 µs, f = 900 MHz
10
toward Cellular phone noise
20
EQOUT Noise Output vs. Transmission Frequency
FIN(L) RIN(L)
Transmission Frequency (MHz)
EQOUT Noise Output vs. Transmission Signal Input Level
FIN(L) RIN(L)
30
40
50
EQOUT Noise Output (dBs)
60
70
80
50 40 30 10 0 10 2020
High Frequency Input Vin (dBm)
13
Page 14
HA12231FP
7.0 No signal
70 µ
6.5
6.0
5.5
5.0
Quiescent Current (mA)
4.5
4.0
4 6 10 12 14 168
25
Quiescent Current vs. Supply Voltage
Supply Voltage (V)
Input Amp. Gain vs. Frequency
14
20
15
Gain (dB)
10
5
VCC = 9 V, TAI PBOUT
0
10 100 1k 100k 1M10k
Frequency (Hz)
Page 15
HA12231FP
1
Total Harmonic Distortion vs. Frequency
TAI PBOUT, 0 dB = 450 mVrms, V
= 9 V, Mute off
CC
10 dB 0 dB 10 dB
0.1
T.H.D. (%)
0.01
30 kHz LPF 400 Hz HPF
+
30 kHz LPF
0.001 10 100 1k 100k10k
Frequency (Hz)
Total Harmonic Distortion vs. Output Level
10
TAI PBOUT, 0 dB = 450 mVrms, V
= 9 V, Mute off
CC
100 Hz 1 kHz 10 kHz
(30 kHz LPF) (400 Hz HPF + 30 kHz LPF) (400 Hz HPF + 80 kHz LPF)
400 Hz HPF
+
80 kHz LPF
1
T.H.D. (%)
0.1
0.01
15 10 5 5 10 15 200 Output Level Vout (dB)
15
Page 16
HA12231FP
1
TAI PBOUT = 450 mVrms, Mute off
100 Hz 1 kHz 10 kHz
0.1
T.H.D. (%)
0.01
0.001 4 6 8 10 12 1614
30
TAI PBOUT, 0 dB = 450 mVrms, Mute off, f = 1 kHz, T.H.D. = 1%
25
PBOUT(L) PBOUT(R)
Total Harmonic Distortion vs. Supply Voltage
(30 kHz LPF) (400 Hz HPF + 30 kHz LPF) (400 Hz HPF + 80 kHz LPF)
Supply Voltage (V)
Signal Handling
16
20
15
Vomax (dB)
10
5
0
4 6 10 12 14 168
Supply Voltage (V)
Page 17
HA12231FP
70
60
50
40
30
EQ Gain (dB)
20
FIN EQOUT, VCC = 9 V
10
0
10 100 1k 100k10k
70
65
120 µ 70 µ
FIN EQOUT, Vout = 0 dB = 60 mVrms, DIN-AUDIO filter
120 µs 70 µs
Equalizer Amp. Gain vs. Frequency
Frequency (Hz)
Signal to Noise Ratio vs. Supply Voltage
60
55
50
Signal to Noise Ratio (dB)
45
40
4 6 10 12 14 168
Supply Voltage (V)
17
Page 18
HA12231FP
10
Total Harmonic Distortion vs. Frequency
FIN EQOUT, Vout = +20 dB, 0 dB = 60 mVrms
120 µs 70 µs
1
T.H.D. (%)
0.1
30 kHz LPF 400 Hz HPF
+
30 kHz LPF
0.01 100 1k 100k10k
Frequency (Hz)
Total Harmonic Distortion vs. Output Level (120 µs)
100
FIN EQOUT, 0 dB = 60 mVrms, V
= 9 V
CC
10
100 Hz 1 kHz 10 kHz
(30 kHz LPF) (400 Hz HPF + 30 kHz LPF) (400 Hz HPF + 80 kHz LPF)
400 Hz HPF
+
80 kHz LPF
18
1
T.H.D. (%)
0.1
0.01
510 353025155020 Output Level Vout (dB)
Page 19
HA12231FP
100
FIN EQOUT, 0 dB = 60 mVrms, V
= 9 V
CC
100 Hz 1 kHz
10
1
T.H.D. (%)
0.1
0.01
510 353025155020
10
10 kHz
FIN EQOUT, Vout = 60 mVrms, V
= 9 V
CC
100 Hz 1 kHz 10 kHz
Total Harmonic Distortion vs. Output Level (70 µs)
(30 kHz LPF) (400 Hz HPF + 30 kHz LPF) (400 Hz HPF + 80 kHz LPF)
Output Level Vout (dB)
Total Harmonic Distortion vs. Supply Voltage (120 µs)
(30 kHz LPF) (400 Hz HPF + 30 kHz LPF) (400 Hz HPF + 80 kHz LPF)
1
T.H.D. (%)
0.1
0.01 4 6 8 10 12 1614
Supply Voltage (V)
19
Page 20
HA12231FP
10
FIN EQOUT, Vout = 60 mVrms, V
= 9 V
CC
1
T.H.D. (%)
0.1
0.01 4 6 8 10 12 1614
45
FIN, RIN EQOUT, 120 µs, 0 dB = 60 mVrms, f = 1 kHz, T.H.D. = 1%
40
Total Harmonic Distortion vs. Supply Voltage (70 µs)
100 Hz 1 kHz 10 kHz
FIN RIN
(30 kHz LPF) (400 Hz HPF + 30 kHz LPF) (400 Hz HPF + 80 kHz LPF)
Supply Voltage (V)
Signal Handling
20
35
30
Vomax (dB)
25
20
15
4 6 10 12 14 168
Supply Voltage (V)
Page 21
HA12231FP
45
FIN, RIN EQOUT, 70 µs, 0 dB = 60 mVrms, f = 1 kHz, T.H.D. = 1%
40
35
30
Vomax (dB)
25
20
15
4 6 10 12 14 168
0
10
20
FIN RIN
FIN PBOUT, Vout = 12 dB (0 dB = 450 mVrms), 80 kHz LPF
LR RL
Signal Handling
Supply Voltage (V)
Crosstalk vs. Frequency (CTRL)
30
40
Crosstalk (dB)
50
60
70
80
10 100 1k 100k10k
Frequency (Hz)
21
Page 22
HA12231FP
0
RIN PBOUT, Vout = 12 dB (0 dB = 450 mVrms), 80 kHz LPF
10
20
30
40
Crosstalk (dB)
50
60
70
80
10 100 1k 100k10k
10
0
LR RL
TAI PBOUT, V 0 dB = 450 mVrms
SER LH SER HL REP LH REP HL
Crosstalk vs. Frequency (CTRL)
Frequency (Hz)
MS Amp. Sensitivity vs. Frequency
= 9 V,
CC
22
10
20
MS Sensing Level (dB)
30
40
10 100 1k 100k10k
Frequency (Hz)
Page 23
HA12231FP
1000
No-Signal Sensing Time vs. Resistance
TAI PBOUT, VCC = 9 V, f = 5 kHz, MSOUT L H
SER 0 dB
100
10
No-Signal Sensing Time (ms)
1
Signal Sensing Time vs. Capacitance
1000
TAI PBOUT, VCC = 9 V, f = 5 kHz, MSOUT H L
SER 0 dB
PBOUT
MSOUT
10M100k 1M10k
Resistance R10 ()
100
10
Signal Sensing Time (ms)
1
0.1
0.001 0.01 1010.1 Capacitance C8 (µF)
PBOUT
MSOUT
23
Page 24
HA12231FP
Package Dimensions
20
Unit: mm
12.6
13 Max
11
5.5
1
0.80 Max
1.27
*0.42 ± 0.08
± 0.06
0.40
*Dimension including the plating thickness
Base material dimension
10
0.12
0.10 ± 0.10
0.15
M
2.20 Max
7.80
0.20 ± 0.04
*0.22 ± 0.05
0.70 ± 0.20
Hitachi Code JEDEC EIAJ Mass
(reference value)
+ 0.20 – 0.30
1.15
0° – 8°
FP-20DA — Conforms
0.31 g
24
Page 25
HA12231FP
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
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Copyright Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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25
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