HA12219NT is designed to operate on single supply, shown by table 1.
Table 1Supply Voltage
ItemPower Supply Range
Single Supply9.5 V to 15.0 V
Reference Voltage
As AC reference (Vref) of this IC has not a curr ent drivability, Vref fluctuates by A/B switching of PB-EQ.
Provided it causes you anxiety, please supply 7 pin with approximate 1/2 V
For example, a suitable circuit is shown by figure 1.
This IC has a capacitor charger for the Vref, indicated to the pin interface circuit figure.
voltage.
CC
470 Ω
V
CC
1
11
GND
7
Vref
+
470 µF
Figure 1 Reference Voltage Circuit
Lch PB-EQ Reference voltage
Lch REC-EQ Reference voltage
Rch REC-EQ Reference voltage
Rch PB-EQ Reference voltage
Rev.2, Jul. 1998, page 7 of 29
Page 8
HA12219NT
Operating Mode Control
HA12219NT provides fully electronic switching circuits. And each operating mode control is controlled
by parallel data (DC voltage).
Table 2 shows the control voltage of each control input pin.
Table 2Control Voltage (Vth)
Pin No.LoMidHiUnitTest Condition
18, 200.0 to 0.5—2.4 to V
CC
V
Input PinVMeasure
190.0 to 0.51.2 to 1.82.4 to V
CC
V
Note:1. Each pin is pulled down with 100 kΩ internal resistor. 16 to 18 pins are low-level when each pin
is open.
2. Over shoot level and under shoot level of input signal must be the standardi ze d.
(High: Less than V
, Low: More than –0.2 V)
CC
Block Diagram
Figure 2 shows the block diagram.
As this IC is built-in REC return switch, the configuration system can be simple system using a few
external component and the REC/PB head.
About these logics, please look at the Parallel Data Format.
REC-IN
22
PB-OUT
15
B head
A head
REC-OUT(L)
PB-IN B(L)
PB-IN A(L)
2
4
5
8
Return SW
B
+
−
A
REC - EQ
Vref
Rev.2, Jul. 1998, page 8 of 29
7
Figure 2 Block Diagram (Lch)
1310
Normal Speed
PB-A
Page 9
HA12219NT
Level Block Diagram
The gain establishment of PB-EQ considers PB output level
{(external AMP+PB AMP <HA12136A>) = 580 mV (Dolby Level)} like figure 3 as the target.
Regarding REC-EQ adjust the gain in front of input to this IC.
Similarly to PB, it consider Dolby level as a stan dard. And R1 needs the value more than 5.6 kΩ.
Because mode establishment resistances are built-in, REC-EQ frequ e n cy characteristics are respectiv ely
fixed value.
In case the change of the frequency characteristics are necessary, please inquire the responsible agent
because the adjustment of resistors is necessary.
580 mV
(Dolby level)
63.6 mV
HA12136A
0.6 mV
40.5 dB
PB-EQ
Figure 3 PB Level Block Diagram (120
Dolby IC
µµµµ
s, 1 kHz)
26 dB
Rev.2, Jul. 1998, page 9 of 29
Page 10
HA12219NT
Absolute Maximum Ratings (Ta = 25°C)
ItemSymbolRatingUnitNote
Maximum supply voltageV
Power dissipationP
Operating temperatureTopr–40 to +75°C
Storage temperatureTstg–55 to +125°C
Operating voltageVopr9.5 to 15V
Note: HA12219NT operates on single supply voltage.
PB-EQ Total Harmonic Distortion vs. Output Level (1)
Ain
PBOUT
Bin
VCC = 12V, Vref = 5.6V
NN
1.0
0.1
Total Harmonic Distortion T.H.D. (%)
0.01
100Hz
1kHz
10kHz
−20
Output Level Vout (dBs)
PB-EQ Total Harmonic Distortion vs. Output Level (2)
Ain
PBOUT
Bin
VCC = 12V, Vref = 5.6V
NC
1.0
0.1
Total Harmonic Distortion T.H.D. (%)
0.01
−20
100Hz
1kHz
10kHz
Output Level Vout (dBs)
010−10
010−10
20
20
Rev.2, Jul. 1998, page 16 of 29
Page 17
180
170
160
150
140
130
120
110
100
Noise (µVrms)
90
80
70
60
50
Ain
Vref = 1/2V
wait DIN/AUDIO
Rch 120µ
Rch 70µ
Lch 120µ
Lch 70µ
81513119
PB-EQ Noise Level vs. Supply Voltage (1)
CC
101214
Supply Voltage (V)
HA12219NT
16
180
170
160
150
140
130
120
110
100
Noise (µVrms)
90
80
70
60
50
Bin
Vref = 1/2V
wait DIN/AUDIO
Rch 120µ
Rch 70µ
Lch 120µ
Lch 70µ
81513119
PB-EQ Noise Level vs. Supply Voltage (2)
CC
101214
Supply Voltage (V)
16
Rev.2, Jul. 1998, page 17 of 29
Page 18
HA12219NT
45
39
33
27
REC-EQ Gain (dB)
21
15
1001k10k100k
Rin → RECOUT
Vin = 7.75mVrms
V
= 12V, Vref = 5.6V
CC
REC-EQ Gain vs. Frequency
NC
NN
Frequency (Hz)
REC-EQ Maximum Output Level vs. Supply Voltage (1)
5
NN
100Hz
1kHz
10kHz
4
3
2
Maximum Output Level Vomax (Vrms)
1
8
101214
Supply Voltage (V)
16
Rev.2, Jul. 1998, page 18 of 29
Page 19
REC-EQ Maximum Output Level vs. Supply Voltage (2)
5
NC
100Hz
1kHz
10kHz
4
3
2
Maximum Output Level Vomax (Vrms)
1
8
101214
Supply Voltage (V)
HA12219NT
16
REC-EQ Total Harmonic Distortion vs. Output Level (1)
100
Rin → RECOUT
NN
V
= 12V, Vref = 5.6V
CC
100Hz
1kHz
10kHz
10
1.0
Total Harmonic Distortion T.H.D. (%)
0.1
−20
Output Level Vout (dBs)
100−10
20
Rev.2, Jul. 1998, page 19 of 29
Page 20
HA12219NT
REC-EQ Total Harmonic Distortion vs. Output Level (2)
100
Rin → RECOUT
NC
V
= 12V, Vref = 5.6V
CC
100Hz
1kHz
10kHz
10
1.0
Total Harmonic Distortion T.H.D. (%)
0.1
−20
Output Level Vout (dBs)
100−10
20
REC-EQ Signal to Noise Ratio vs. Supply Voltage
70
RECOUT
A-WTG filter
NN
NC
65
60
Signal to Noise Ratio S/N (dB)
55
8
101214
Supply Voltage (V)
16
Rev.2, Jul. 1998, page 20 of 29
Page 21
PB-EQ Channel Separation vs. Frequency (L ↔ R) (1)
−30
Ain → PBOUT
Vin = +12dB
V
= 12V, Vref = 5.6V
CC
L ↔ R
−40
−50
−60
Channel Separation (dB)
−70
HA12219NT
NC
NN
−80
PB-EQ Channel Separation vs. Frequency (L ↔ R) (2)
−30
Bin → PBOUT
Vin = +12dB
V
= 12V, Vref = 5.6V
CC
L ↔ R
−40
−50
−60
Channel Separation (dB)
−70
−80
100101k10k100k
Frequency (Hz)
NN
NC
100101k10k100k
Frequency (Hz)
Rev.2, Jul. 1998, page 21 of 29
Page 22
HA12219NT
−20
−40
−60
−80
Crosstalk (dB)
−100
Ain → Bin
Vin = +12dB
V
= 12V, Vref = 5.6V
CC
NN, NC
PB-EQ Crosstalk vs. Frequency (Input: Ain → Bin)
−120
−20
Bin → Ain
Vin = +12dB
V
= 12V, Vref = 5.6V
CC
NN, NC
−40
−60
−80
Crosstalk (dB)
−100
−120
100101k10k100k
Frequency (Hz)
PB-EQ Crosstalk vs. Frequency (Input: Bin → Ain)
100101k10k100k
Frequency (Hz)
Rev.2, Jul. 1998, page 22 of 29
Page 23
0
RECOUT
Vin = 100mVrms
V
CC
−10
+
−20
Ripple Rejection Ratio vs. Frequency (REC)
= 12V, Vref = 5.6V
1
51Ω
V
CC
+
470µ
Vref
7
470Ω470Ω
11
HA12219NT
NC
−30
Ripple Rejection Ratio R.R.R. (dB)
−40
−50
100101k10k100k
Ripple Rejection Ratio vs. Frequency (PB)
0
PBOUT
Vin = 100mVrms
V
= 12V, Vref = 5.6V
CC
−20
−40
1
+
51Ω
V
CC
+
470µ
Vref
7
470Ω470Ω
−60
NN
Frequency (Hz)
11
NN
NC
Ripple Rejection Ratio R.R.R. (dB)
−80
−100
100101k10k100k
Frequency (Hz)
Rev.2, Jul. 1998, page 23 of 29
Page 24
HA12219NT
−40
−60
−80
−100
Mute Attenuation (dB)
−120
Rin → RECOUT
Vin = +12dB
V
= 12V, Vref = 5.6V
CC
Mute Attenuation vs. Frequency
NN
NC
−140
REC-EQ Channel Separation vs. Frequency (R → L)
−20
Rin → RECOUT
Vin = +12dB
V
= 12V, Vref = 5.6V
CC
Rch → Lch
−40
−60
−80
Channel Separation (dB)
−100
−120
100101k10k100k
Frequency (Hz)
NC
NN
100101k10k100k
Frequency (Hz)
Rev.2, Jul. 1998, page 24 of 29
Page 25
−20
Rin → RECOUT
Vin = +12dB
V
CC
Lch → Rch
−40
HA12219NT
REC-EQ Channel Separation vs. Frequency (L → R)
= 12V, Vref = 5.6V
NC
−60
−80
Channel Separation (dB)
−100
−120
Crosstalk vs. Frequency (Mode: REC-EQ → PB-EQ)
−20
Rin → PBOUT
Vin = 60mVrms
V
= 12V, Vref = 5.6V
CC
−40
−60
NN
100101k10k100k
Frequency (Hz)
NC
−80
Crosstalk (dB)
−100
−120
NN
100101k10k100k
Frequency (Hz)
Rev.2, Jul. 1998, page 25 of 29
Page 26
HA12219NT
0
−20
−40
−60
Crosstalk (dB)
Crosstalk vs. Frequency (Mode: PB-EQ → REC-EQ) (1)
Ain → RECOUT
Vin = +15dB
V
= 12V, Vref = 5.6V
CC
A70
−80
−100
−20
Bin → RECOUT
Vin = +15dB
V
= 12V, Vref = 5.6V
CC
−40
−60
−80
Crosstalk (dB)
A120
100101k10k100k
Frequency (Hz)
Crosstalk vs. Frequency (Mode: PB-EQ → REC-EQ) (2)
BI
BII
−100
−120
Rev.2, Jul. 1998, page 26 of 29
100101k10k100k
Frequency (Hz)
Page 27
Altered Reference Voltage vs. External Resistance
400
300
V
V
CC
1
R21
CC
R22
VCC = 12V (Vref = 1/2 VCC)
Vref
7
200
∆Vref (PB-A vs. PB-B) (mV)
100
0
1001k100k10k1M
Resistance (Ω) (R21, R22 same)
HA12219NT
−23
−24
−25
−26
RETURN Level (dB)
−27
−28
10
RETURN Level vs. Frequency
Pin 5 or 6
4
Vref
Vout
820Ω
+
22µ
Vin
V
Vin = 1Vrms
Vin = 800mVrms
Vin = 600mVrms
Vin = 400mVrms
1001k10k100k
Frequency (Hz)
Rev.2, Jul. 1998, page 27 of 29
Page 28
HA12219NT
Package Dimensions
22
Unit: mm
19.2
20.32 Max
12
6.3
1
0.89
1.17 Max
1.78 ± 0.25
1.0
0.48 ± 0.10
11
7.4 Max
0.51 Min
2.90 Min 5.06 Max
Hitachi Code
JEDEC
EIAJ
Weight
7.62
+ 0.10
0.25
Ð 0.05
0¡ Ð 15¡
(reference value)
DP-22NS
Ñ
Conforms
0.90 g
Rev.2, Jul. 1998, page 28 of 29
Page 29
HA12219NT
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with u se of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe: http://www.hitachi-eu.com/hel/ecg
Asia : http://sicapac.hitachi-asia.com
Japan: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
Rev.2, Jul. 1998, page 29 of 29
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