HA12209F is silicon monolithic bipolar IC providing Dolby noise reduction system*, music sensor system,
REC equalizer system and each electronic control switch in one chip.
Functions
• Dolby B-NR× 2 channel
• REC equalizer× 2 channel
• Music sensor× 1 channel
• Each electronic control switch to change REC equalizer, bias, etc.
Features
• REC equalizer is very small number of external parts and have 4 types of frequency characteristics
built-in.
• 2 types of input for PB, 1 type of input for REC.
• 70µ-PB equalizer changing system built-in.
• Dolby NR with dubbing double cassette decks.
Unprocessed signal output available from recording out terminals during PB mode.
• Provide stable music sensor system, available to design music sensing time and level.
• Controllable from direct micro-computer output.
• Bias oscillator control switch built-in.
• NR ON/OFF and REC/PB fully electronic control switching built-in.
• Normal-speed/high-speed, TYPE I/TYPE II and PB equalizer fully electron ic control switching built-in.
• Available to reduce substrate-area because of high integration and small external parts.
*Dolby is a trademark of Dolby Laboratories Licensing Corporation.
A license from Dolby Laboratories Licensing Corporation is required for the use of this IC.
HA12209F❍❍❍❍
Note: Depending on the employed REC/PB head and test tape characteristics, there is a rare case that the
REC-EQ characteristics of this LSI can not be matched to the required characteristics because of
built-in resistors which determined the REC-EQ parameters in this case, please inquire the
responsible agent because the adjustment of built-in resistor is necessary.
Rev.2, Jun. 1999, page 2 of 49
Page 3
HA12209F
Pin Description, Equivalent Circuit (VCC=12V, Ta=25°C, No signal, The value in the
Single Supply10V to 15V
Note: The lower limit of supply voltage depends on the line output reference level.
The minimum value of the overload margin is specified as 12dB by Dolby Laboratories.
Reference Voltage
For this IC, the reference voltage (V
/2) occurrence device is built-in as AC grand. A capacitor for a
CC
ripple filter is greatly small characteristic with 1/1 00 co mpar ed with co nventional device.
And, the reference voltage are provided for the left channel and the right channel separately.
The block diagram is shown as figure 1.
V
22 23
V
CC
50 51 49
GNDPIR
CC
+
–
+
–
+
–
+
1µ
L channel Reference voltage
Music sensor Reference voltage
R channel Reference voltage
Unit
C : F
Figure 1 Reference Voltage
Rev.2, Jun. 1999, page 8 of 49
Page 9
HA12209F
Operating Mode Control
HA12209F provides fully electronic switching circuits. And each operating mode control is controlled by
parallel data (DC voltage).
Table 2Control Voltage
Pin No.LoHiUnitTest Condition
10, 11, 12, 14, 16,
–0.2 to 1.04.0 to 5.3V
17, 19, 20, 21
Note: 1. Each pins are on pulled down with 100kΩ internal resistor. Therefore, it will be low-level when
each pins are open.
2. Over shoot level and under shoot level of input signal must be the standardized.
(High: 5.3V, Low: –0.2V)
3. For reduction of pop noise, connect 1µF to 22µF capacitor with mode control pins. But it is
impossible to reduce completely in regard to Line mute, therefore, use external mute at the same
time.
Input Block Diagram and Lev e l Diagram
Input PinMeasure
MSREF
5.7dB
REC
300mVrms
12k
FLAT
(120µ)
70µs
15k
CEX1
0dB
PB
REC
PB/REC=0dB/17dB
42.4mVrmsABO
RIN
AIN
BIN
Note: The each level shown above is typical value when offering PBOUT level to PBOUT pin.
25.9mVrms
21.3dB
300mVrms
PB
300mVrms
DOLBY
B-NR
Figure 2 Input Block Diagram
PBOUT
580mVrms
RECOUT
300mVrms
Unit
R : Ω
C : F
Rev.2, Jun. 1999, page 9 of 49
Page 10
HA12209F
PB Equalizer
By switching logical input level of 11 pin (for Ain) and 14 pin (for Bin), you can equalize corresponding to
tape position at play back mode.
With the capacity CEX1 capacitance that we showed for figure 2 70 µs by the way figure seem to 3 they
are decided.
Gv
t1 = CEX1 · (12k + 15k)
t2 = CEX1 · 15k
(t1)(t2)
Figure 3 Frequency Characteristic of PB Equalizer
The sensitivity Adjustment of Music Sensor
Adjusting MS amp. gain by external resistor, the sensitivity of music sensor can set up.
f
PB(L)
–6dB
PB(R)
REP
45k
LPF
25kHz
MAI
100k
–
+
MS AMP
C26
0.01µ
MA
OUT
R12
330k
MSIN
100k
Figure 4 Music Sensor Block Diagram
V
CC
DET
MS
DET
+
C10
0.33µ
MS OUT
GND
DV
CC
R
L
Microcomputer
GND
Unit
R : Ω
C : F
Rev.2, Jun. 1999, page 10 of 49
Page 11
The sensitivity of Music Senso r
Gv
HA12209F
f1 =
f2 = 25k [Hz]
f
f1f2
1
2π· C26 · 100k
[Hz]
Figure 5 Frequency Characteristic of MSIN
Occasion of the external component of figure 4, f1 is 159Hz. A standard level of MS input pin
25.9mVrms, therefore, the sensitivity of music sensor (S) can request it, b y lower formulas.
A = MS Amp Gain
B = PB input Gain × (1/2)*
C = Sensed voltage
20log (A × B) = D [dB]
PB input Gain = 21.3 [dB]
1
S = 20log
S = 14 – D [dB]
C
25.9 · A · B
[dB]
Note: 1. Case of one-sided channel input.
Time Constant of Detection
Figure 6(1) generally shows that detection time is in proportion to value of capacitor C10. But, with
Attack*
2
and Recovery*3 the detection time differs exceptionally.
Recovery
Attack
Detection time
C10
Function Characteristic of MS (1)Function Characteristic of MS (2)Function Characteristic of MS (3)
RecoveryRecovery
AttackAttack
Detection time
R12
Detection level
Detection time
Input level
Figure 6 Function Characteristics of MS
Like the figure 6(2), Recovery time is variably possible by value of resistor R12. But Attack time gets
about fixed value. Attack time has dependence by input level. When a large signal is inputted, Attack time
is short tendency.
Note: 2. Attack :Non-music → Music
3. Recovery : Music → Non-music
Rev.2, Jun. 1999, page 11 of 49
Page 12
HA12209F
Music Sensor Output (MSOUT)
As for internal circuit of music sensor block, music sensor out pin is connected to the collector of NPN type
directly, output level will be “high” when sensing no signal. And ou tput lev el will be “low” when sensing
signal.
Connection with microcomputer, it is requested to use external pull up resistor (R
Note: Supply voltage of MSOUT pin must be less than V
voltage.
CC
= 10k to 22kΩ)
L
The Tolerances of External Components
For Dolby NR precision securing, please use external components shown at figure 7.
If leak-current are a few electrolytic-capacitor, it can be applicable to C2 and C15.
C15
0.1µ
±10%
39
DET (L)
HA12209
BIAS1
R1
33k
±2%
DET (R)
14
C2
0.1µ
±10%
Unit
R : Ω
C : F
Figure 7 Tolerance of External Components
Low-Boost
+
CEX2
2.2µ
Vin
Rev.2, Jun. 1999, page 12 of 49
EQIN
REX1
20k
REX2
6.8k
GND
REX3
5.1k
+
CEX3
0.47µ
+
CEX4
0.47µ
REC EQ
Figure 8 Example of Low Boost Circuit
EQOUT
Unit
R : Ω
C : F
Page 13
HA12209F
External components shown figure 8 gives frequency response to take 6dB boost. And cut off frequency
can request it, by lower formulas.
Gv
1
1
REX1 · REX2
R0 =[Ω]
REX1 + REX2
f1f2
f1 =[Hz]
2π· CEX3 · (REX3 + R0)
f2 =[Hz]
2π· CEX3 · REX3
f
Figure 9 Frequency Characteristic of Low-Boost
Bias Switch
This series built-in DC voltage gene rator for bias oscillator and its bias switches.
External resistor R8, R10 which corresponded with tape positions and bias out voltage are relater with
below.
Vbias =× (VCC – 0.7) [V]
R9
(R10 or R8) + R9
Bias switch follows to a logic of 14 pin (B 120/70).
Note: A current that flows at bias out pin, please use it less than 5mA.
BIAS (N)
BIAS (C)
26
25
R10
R8
Vbias
R9
GND
Figure 10 External Components of Bias Block
Rev.2, Jun. 1999, page 13 of 49
Page 14
HA12209F
Absolute Maximum Rating (Ta=25°C)
ItemSymbolRatingUnitNote
Max supply voltageV
Power dissipationP
Operating temperatureTopr–40 to +75°C
Storage temperatureTstg–55 to +125°C
VCC = 12V, EQin → EQOUT,
Vin = –26dBs = 0dB
Normal speed, TYPE I
10
1.0
EQ Total Harmonic Distortion EQ T.H.D (%)
0.1
–30
Input Level (dB)
0
30–20–101020
Rev.2, Jun. 1999, page 43 of 49
Page 44
HA12209F
EQ Total Harmonic Distortion vs. Input Level (2)
100
315Hz
1kHz
5kHz
10kHz
VCC = 12V, EQin → EQOUT,
Vin = –26dBs = 0dB
Normal speed, TYPE II
10
1.0
EQ Total Harmonic Distortion EQ T.H.D (%)EQ Total Harmonic Distortion EQ T.H.D (%)
0.1
–30
Input Level (dB)
0
30–20–101020
EQ Total Harmonic Distortion vs. Input Level (3)
100
315Hz
2kHz
10kHz
20kHz
VCC = 12V, EQin → EQOUT,
Vin = –26dBs = 0dB
High speed, TYPE I
10
1.0
0.1
–30
0
Input Level (dB)
30–20–101020
Rev.2, Jun. 1999, page 44 of 49
Page 45
EQ Total Harmonic Distortion vs. Input Level (4)
100
315Hz
2kHz
10kHz
20kHz
VCC = 12V, EQin → EQOUT,
Vin = –26dBs = 0dB
High speed, TYPE II
10
1.0
EQ Total Harmonic Distortion EQ T.H.D (%)
0.1
–30
0
Input Level (dB)
HA12209F
30–20–101020
REC-MUTE Attenuation vs. Frequency
–40
VCC = 12V
–60
–80
–100
REC-MUTE Attenuation (dB)
–120
–140
10
10k1k100100k
Frequency (Hz)
Rev.2, Jun. 1999, page 45 of 49
Page 46
HA12209F
40
30
20
10
MS AMP. Gain (dB)
MS AMP. Gain vs. Frequency
VCC =12V
MAOUT
MSIN
0
–10
10
10
VCC =12V
5
0
–5
MS Sensitivity (dB)
–10
10k1k100100k
Frequency (Hz)
MS Sensitivity vs. Frequency
Hi → Lo
Lo → Hi
–15
10
Rev.2, Jun. 1999, page 46 of 49
10k1k100100k
Frequency (Hz)
Page 47
No-Signal Sensing Time vs. Resistance
10000
V
1000
100
No-Signal Sensing Time (ms)
10
1
CC
22
R12C10
29
MSDET
10k100k1M
Resistance R12 (Ω)
HA12209F
PBOUT
MSOUT
+10dB
0dB
–10dB
VS = 12V, f = 5kHz
Signal Sensing Time vs. Capacitance
1000
PBOUT
MSOUT
100
10
Signal Sensing Time (ms)
1.0
0.1
V
CC
22
R12C10
29
MSDET
0.010.11.0
+10dB
0dB
–10dB
VS = 12V, f = 5kHz
Capacitor C10 (µF)
Rev.2, Jun. 1999, page 47 of 49
Page 48
HA12209F
Package Dimensions
12.8 ± 0.3
10.0
42
29
43
12.8 ± 0.3
56
1
*0.32 ± 0.08
0.30 ± 0.06
0.13
M
0.7750.775
0.35
0.10
*Dimension including the plating thickness
Base material dimension
14
28
15
+0.1
2.20
–0.09
0.1
0.65
2.54 Max
0.15 ± 0.04
*0.17 ± 0.05
Hitachi Code
JEDEC
EIAJ
Weight
1.40
0.60 ± 0.15
(reference value)
Unit: mm
0 – 8
FP-56
—
—
0.5 g
Rev.2, Jun. 1999, page 48 of 49
Page 49
HA12209F
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, in cluding
intellectual property rights, in connection with u se of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe: http://www.hitachi-eu.com/hel/ecg
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Japan: http://www.hitachi.co.jp/Sicd/indx.htm
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Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
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Electronic Components Group.
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Maidenhead
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Tel: <44> (1628) 585000
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URL : http://www.hitachi.com.sg
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(Taipei Branch Office)
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Tel : <886>-(2)-2718-3666
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Telex : 23222 HAS-TP
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Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
Rev.2, Jun. 1999, page 49 of 49
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