Datasheet GP800NSS33 Datasheet (DYNEX)

GP800NSS33

GP800NSS33

Single Switch IGBT Module

Preliminary Information

Replaces February 2000 version, DS5358-2.0 DS5358-2.1 March 2001

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate with AL

■ Low Inductance Internal Construction

Substrate

2O3

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The Powerline range of high power modules includes dual,
half bridge and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.

The GP800NSS33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP800NSS33

Note: When ordering, please use the whole part number.

KEY PARAMETERS
V
V
I

C

I

C(PK)

CES
CE(sat)

(typ) 3.6V
(max) 800A
(max) 1600A

Aux C

G
Aux E

Fig. 1 Single switch circuit diagram

1

C

2

E

G

3300V

External connection

E1 E2

External connection

E1

E2

C1

C2

C2C1

2

E

- Aux Emitter

1

C

- Aux Collector

Outline type code: N

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9

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GP800NSS33

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor

Thermal resistance - diode

Parameter

Test Conditions

= 0V

V

GE

-

T

= 70˚C

case

1ms, T

T

case

= 110˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

-

Max.

3300

±20

800

1600

8.3

6

Max.

15

30

Units

V

V

A

A

kW

kV

Units

˚C/kW

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

8

(with mounting grease)

-

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

–40

Electrical connections - M4

Electrical connections - M8

125

-

125

125

-

-

-

5

2

10

˚C

˚C

˚C

Nm

Nm

Nm

2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP800NSS33

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 120mA, VGE = V

I

C

CES

CES

, T

CE

VGE = 15V, IC = 800A

= 15V, IC = 800A, , T

V

GE

DC

= 1ms

t

p

= 800A

I

F

= 800A, T

I

F

= 25V, VGE = 0V, f = 1MHz

V

CE

= 125˚C

case

-

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

3.6

4.5

-

-

2.3

2.4

200

15

Max.

2

70

12

7.5

4.3

5

800

1600

2.9

3

-

-

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9

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GP800NSS33

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

I

rr

E

REC

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Diode reverse current

Diode reverse recovery energy

Symbol

Parameter

Parameter

Test Conditions

= 800A

I

C

= ±15V

V

GE

= 1800V

V

CE

= = 3.3Ω

R

G(ON)

= 6.8Ω

R

G(OFF)

= 440nF, L ~ 100nH

C

GE

I

= 800A, VR = 1800V,

F

/dt = 3600A/µs-1

dI

F

Test Conditions

Min.

-

-

-

-

-

-

-

-

-

Min.

Typ.

3.2

0.7

1

1.1

0.4

1.2

750

400

0.45

Typ.

Max.

-

-

-

-

-

-

-

-

-

Max.

Units

µs

µs

J

µs

µs

J

µC

A

J

Units

t

E

t

E

d(off)

d(on)

E

Q

t

OFF

t

ON

I

rr

REC

3.4

= 800A

Turn-off delay time

f

Fall time

Turn-off energy loss

Turn-on delay time

r

rr

Rise time

Turn-on energy loss

Diode reverse recovery charge

C

Diode reverse current

I

C

= ±15V

V

GE

= 1800V

V

CE

= = 3.3Ω

R

G(ON)

= 6.8Ω

R

G(OFF)

= 440nF, L ~ 100nH

GE

I

= 800A, VR = 1800V,

F

/dt = 3000A/µs-1

dI

F

Diode reverse recovery energy

-

1.1

-

1.5

-

1.1

-

0.5

-

1.5

-

800

-

650

-

0.7

-

-

-

-

-

-

-

-

-

-

µs

µs

J

µs

µs

J

µC

A

J

4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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TYPICAL CHARACTERISTICS

0

600

800

200

400

1000

1200

1400

1600

1800

0 500 1000

1500

2000

2500

3000

3500

Collector-emitter voltage, V

ce

- (V)

Collector current, I

C

- (A)

T

case

= 125˚C

V

ge

= ±15V

R

g(ON)

= 3.3Ω

R

g(OFF)

= 6.8Ω

C

GE

= 440nF

GP800NSS33

Vge = 20/15/12/10V

1600

Common emitter

= 25˚C

T

case

1400

1200

- (A)

1000

c

800

600

Collector current, I

400

200

0

0 1.0 2.0 3.0 4.0 5.0 6.0

Collector-emitter voltage, V

ce

- (V)

Fig.3 Typical output characteristics Fig.4 Typical output characteristics

Vge = 20/15/12/10V

1600

Common emitter
T

= 125˚C

case

1400

1200

- (A)

1000

c

800

600

Collector current, I

400

200

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

Collector-emitter voltage, V

ce

- (V)

1600

1400

Tj = 25˚C

1200

Tj = 125˚C

1000

- (A)

F

800

600

Foward current, I

400

200

0

1.0

1.5 2.0 2.5 3.0 3.5
Foward voltage, V

- (V)

F

Fig.5 Diode typical forward characteristics Fig.6 Reverse bias safe operating area

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/9

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GP800NSS33

10000

IC max. (single pulse)

1000

- (A)

C

I

C

100

max. DC (continuous)

Collector current, I

10

Conditions:

= 125˚C, T

T

vj

1

1 10 100 1000 10000

= 70˚C

case

Collector-emitter voltage, V

ce

- (V)

Fig.7 Forward bias safe operating area Fig.8 Transient thermal impedance

t

=

p

t

=

p

t

= 1ms

p

50µs

100

µs

100

- (°C/kW )

th (j-c)

10

1

Transient thermal impedance, Z

0.1

0.001 0.01 10.1
Pulse width, t

- (ms)

p

Diode

Transistor

10

1400

300

290

1200

280

1000

- (A)

C

800

270

- (nF)

ies

260

250

600

400

DC collector current, I

240

230

Input capacitance, C

220

200

0

0 20 40 60 80 100 120 140 160

Case temperature, T

case

- (˚C)

210

200

0102030405060

Collector-emitter voltage, V

Fig. 9 DC current rating vs case temperature Fig.10 Typical input capacitance

Tvj = 25˚C, VCE = 25V
V

= 0V, f = 1MHz

GE

- (V)

CE

6/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP800NSS33

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

48.8

10.35

24.5

2

E

- Aux Emitter

1

C

- Aux Collector

10.65

6x M4

62

20

1

C

20

E1

2

E

62

C1

65

57

G

E2

40

20

C2

43.5 18
57

6x Ø7

65

45.2
4x M8

38

28

31.5

5

140

Nominal weight: 1600g

Module outline type code: N

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/9

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GP800NSS33

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Electrostatic handling precautions AN4502
An introduction to IGBTs AN4503
IGBT ratings and characteristics AN4504
Heatsink requirements for IGBT modules AN4505
Calculating the junction temperature of power semiconductors AN4506
Gate drive considerations to maximise IGBT efficiency AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508
Guidance notes for formulating technical enquiries AN4869
Principle of rating parallel connected IGBT modules AN5000
Short circuit withstand capability in IGBTs AN5167
Driving high power IGBTs with Concept gate drivers AN5190

POWER ASSEMBLY CAPABILITY

The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.

An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.

HEATSINKS

The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP800NSS33

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontarion, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Central Europe Tel: [phone]. Fax: [phone]
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SALES OFFICES

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Tel: [phone]. Fax: [phone].
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5358-2 Issue No. 2.1 March 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/9

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