Datasheet GP400DDM12 Datasheet (DYNEX)

GP400DDM12

13

24

12

11

10

7

6

5

8

9

GP400DDM12

Dual Switch IGBT Module

Advance Information

DS5503-1.0 October 2001

FEATURES

■ High Thermal Cycling Capability

■ 400A Per Switch

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Resonant Converters

The Powerline range of high power modules includes half
bridge, dual, chopper and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.

The GP400DDM12 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.

KEY PARAMETERS
V
V
I

C

I

C(PK)

CES
CE(sat)

(typ) 2.7V
(max) 400A
(max) 800A

5(E1)

6(G1)

1

)

7(C

Fig. 1 Dual switch circuit diagram

1(E1)

3(C1)

1200V

2(C2)

4(E2)

12(C

11(G2)

10(E

2

)

2

)

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP400DDM12

Note: When ordering, please use the whole part number.

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9

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Outline type code: D

GP400DDM12

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

= 80˚C

T

case

1ms, T

T

case

= 105˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

-

Max.

1200

±20

400

800

3470

4000

Max.

36

80

Units

V

V

A

A

W

V

Units

˚C/kW

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

8

(with mounting grease)

-

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

–40

Electrical connections - M4

Electrical connections - M8

150

-

125

125

-

-

-

5

2

10

˚C

˚C

˚C

Nm

Nm

Nm

29 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP400DDM12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

I

= 120mA, VGE = V

C

CES

CES

, T

CE

VGE = 15V, IC = 800A

= 15V, IC = 800A, , T

V

GE

DC, T

t

p

I

F

I

F

V

= 50˚C

case

= 1ms

= 800A

= 800A, T

= 25V, VGE = 0V, f = 1MHz

CE

= 125˚C

case

-

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

Typ.

-

-

-

5.5

2.7

3.2

-

-

2.2

2.3

45

20

Max.

1

20

±2

7.5

3.5

4

400

800

2.5

2.5

-

-

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9

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GP400DDM12

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Symbol

t

d(off)

Turn-off delay time

Parameter

Parameter

Test Conditions

= 400A

I

C

= ±15V

V

GE

= 600V

V

CE

R

G(ON)

= R

G(OFF)

= 4.7Ω

L ~ 100nH

I

= 400A, VR = 50% V

F

/dt = 2000A/µs

dI

F

Test Conditions

= 400A

I

C

CES

Min.

,

Min.

Typ.

800

-

110

-

-

700

-

170

-

-

-

Typ.

1000

-

Max.

65

45

30

Max.

Units

ns

-

ns

-

mJ

-

ns

-

ns

-

mJ

-

µC

-

Units

ns

-

E

t

E

t

OFF

d(on)

t

ON

Q

150

= ±15V

R

G(ON)

V

GE

= 600V

V

CE

= R

G(OFF)

L ~ 100nH

= 4.7Ω

f

Fall time

Turn-off energy loss

Turn-on delay time

r

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

IF = 400A, VR = 50% V

/dt = 2000A/µs

dI

F

CES

,

-

-

-

-

-

-

80

800

300

75

65

ns

-

mJ

-

ns

-

ns

-

mJ

-

µC

-

49 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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TYPICAL CHARACTERISTICS

GP400DDM12

Vge = 20/15/12/10V

800

Common emitter
T

= 25˚C

case

700

600

- (A)

500

C

400

300

Collector current, I

200

100

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics

Vge = 20/15/12/10V

800

Common emitter
T

= 125˚C

case

700

600

- (A)

500

C

400

300

Collector current, I

200

100

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

90

80

70

60

Conditions:

= 600V

V

ce

T

= 125°C

c

= 4.7Ω

R

g

160

140

120

- (mJ)

100

sw

Conditions:
Vce = 900V
IC = 400A
Tc = 125°C

50

80

40

60

30

Switching energy - (mJ)

20

10

0

0 100 200 300 400 500

Collector current, I

- (A)

C

E

off

E

on

Switching energy, E

40

20

0

0481216

Gate Resistance, R

- (Ohms)

g

Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance

E

off

E

on

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/9

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GP400DDM12

800

700

1000

900

800

600

700

- (A)

C

600

500

400

Collector current, I

300

- (A)

500

F

400

300

Forward current, I

Tj = 25˚C

Tj = 125˚C

200

200

T

= 125˚C

case

= ±15V

100

0

0 0.5 1 1.5 2 2.5 3 3.5

Forward voltage, V

- (V)

F

V

ge

100

R

= 4.7Ω *

g

*Recommended minimum value

0

0 200 400

Collector-emitter voltage, V

600

Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area

800

ce

- (V)

1000 1200

10000

1000

- (A)

C

IC max. (single pulse)

100

I

C

max. DC (continuous)

t

t

p

Collector current, I

10

1

1 10 100 1000 10000

Collector-emitter voltage, V

ce

- (V)

Fig.9 Forward bias safe operating area Fig.10 Transient thermal impedance

= 50µs

p

= 100µs

= 1ms

t

p

100

- (°C/kW )

th (j-c)

10

1

Transient thermal impedance, Z

0.1
1 10 1000100

Pulse width, t

Diode

- (ms)

p

Transistor

10000

69 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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700

600

500

- (A)

C

400

300

200

DC collector current, I

100

GP400DDM12

0

0 20 40 60 80 100 120 140 160

Case temperature, T

case

- (˚C)

Fig.11 DC current rating vs case temperature

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/9

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GP400DDM12

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

13

24

16

18

26

13

6x M4

12

7

14

11

9

10

11.5

62

15

15

5

6

8

35

20

62

65

13

24

4x M8

57

43.3 11.85
57

6x Ø7

65

38

28

5

140

Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3

Auxiliary and Gate pin plastic hole depth (M4) = 9± 0.3

Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1

Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1

Nominal weight: 1050g

Module outline type code: D

89 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

31.5

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GP400DDM12

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.

Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

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© Dynex Semiconductor 2001 Publication No. DS5503-1 Issue No. 1.0 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/9

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