Datasheet GP800FSS12 Datasheet (DYNEX)

GP800FSS12

GP800FSS12

Powerline N-Channel Single Switch IGBT Module

Preliminary Information

Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000

The GP800FSS12 is a single switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.

Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.

These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.

The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.

Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.

12

11

KEY PARAMETERS

V

CES

V

CE(sat)

I

C

I

C(PK)

5

6

7

8

9

10

(typ) 2.7V
(max) 800A
(max) 1600A

13

24

1200V

FEATURES

■ n - Channel

■ Enhancement Mode

■ High Input Impedance

■ Optimised For High Power High Frequency Operation

■ Isolated Base

■ Full 1200V Capability

■ 800A Per Module

APPLICATIONS

■ High Power Switching

■ Motor Control

■ Inverters

■ Traction Systems

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

Outline type code: F

(See package details for further information)

Fig. 1 Electrical connections - (not to scale)

3/4(E)

8(E1)

1

9(G

)

Fig.2 Single switch circuit diagram

1/2(C)

7(C1)

ORDERING INFORMATION

Order As: GP800FSS12
Note: When ordering, please use the complete part number.

1/11

GP800FSS12

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In

extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.

T

= 25˚C unless stated otherwise.

case

Test ConditionsSymbol

V

V

I

C(PK)

CES

GES

I

C

max

isol

Collector-emitter voltage
Gate-emitter voltage

Collector current

Isolation voltageV

VGE = 0V 1200

­DC, T
DC, T
1ms, T
T

case

= 25˚C 1050

case

= 75˚C 800 A

case

= 75˚C A1600

case

= 25˚C (Transistor)

Commoned terminals to base plate.
AC RMS, 1 min, 50Hz

THERMAL AND MECHANICAL RATINGS

Symbol Conditions

DC junction to case

Mounting torque 5Nm
(with mounting grease)

Transistor
Diode

R

R
R

th(j-c)

th(j-c)

th(c-h)

T

j

Thermal resistance - transistor
Thermal resistance - diode DC junction to case

Thermal resistance - Case to heatsink
(per module)

Junction temperature

Max.Parameter

6000Maximum power dissipationP

Min.Parameter Units

-

-

-

Max.

8-

Units

V
V±20
A

W

V2500

o

C/kW21

o

C/kW40-

o

C/kW

o

C150

o

C125-

T

stg

- Mounting - M6 Nm5-

Storage temperature range
Screw torque

-

Electrical connections - M4 Nm2­Electrical connections - M8 Nm10-

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

2/11

–40

125

o

C

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP800FSS12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(SAT)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Conditions

VGE = 0V, VCE = V
VGE = 0V, VCE = V

CES

CES

, T

VGE = ±20V, VCE = 0V

= 125˚C mA50--

case

CE

Min.

VGE = 15V, IC =800A

Collector-emitter saturation voltage

= 125˚C

case

Diode forward current

Diode maximum forward current

DC
tp = 1ms A

Diode forward voltage IF = 800A 2.42.2-

Input capacitance
Module inductance

IF = 800A, T

VCE = 25V, VGE = 0V, f = 1MHz

= 125˚C 2.52.3-

case

-

Typ.

-

-

-

-

Max.

-

-

-4IC = 120mA, VGE = V

­1600

-

±4

3.52.7-

4.03.2-VGE = 15V, IC = 800A, T

800

Units

mA1

µA

V7.5
V
V

A

V

V

90

-

-

-

nF

nH

-20

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/11

GP800FSS12

INDUCTIVE SWITCHING CHARACTERISTICS

For definition of switching waveforms, refer to figure 3 and 4.

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

E

OFF

t

d(on)

E

ON

Q

Q

T

= 125˚C unless stated otherwise.

case

t

d(off)

t

E

OFF

t

d(on)

Turn-off delay time

Fall time

f

Turn-off energy loss

Turn-on delay time ns

Rise time

r

Turn-on energy loss

Diode reverse recovery charge

rr

Diode reverse recovery charge

rr

Turn-off delay time

Fall time

f

Turn-off energy loss

Turn-on delay time ns

Rise time

r

Parameter Min. Typ. Max. Units

Conditions

IC = 800A
VGE = ±15V
VCE = 600V

R

= R

G(ON)

G(OFF)

L ~ 100nH

IF = 800A

VR = 50%V

dIF/dt = 2000A/µs

IC = 800A
VGE = ±15V
VCE = 600V

R

= R

G(ON)

G(OFF)

L ~ 100nH

= 3.3Ω

,

CES

= 3.3Ω

-

1100

150

-

-

130

1300

200
170

ns
ns

mJ

900- 800

320

-t
90

-

150-

-

1300

200

-

170

-

400

130

200

1500

250
250

ns

mJ

µC

µC-170-

ns
ns

mJ

1200- 950

350

-t

450

ns

4/11

E

Q

Q

Turn-on energy loss

ON

Diode reverse recovery charge

rr

Diode reverse recovery charge

rr

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

IF = 800A

VR = 50%V

CES

,

dIF/dt = 2000A/µs

150

-

200

260200-

mJ

µC

µC-225-

SWITCHING DEFINITIONS

+15V

GP800FSS12

t4 + 5µs

E

= ∫ V

on

t

t

= t2 - t

d(on)

tr = t3 - t

10%

0V

V

ge

-15V

I

dt

ce.Ic

1

1

2

90%

10%

t

t

1

2

t

3

t

4

C

V

ce

Fig.3 Definition of turn-on switching times

t7 + 5µs

E

= ∫ V

off

t

= t6 - t

t

d(off)

tf = t7 - t

+15V

90%

0V

V

-15V

dt

ce.Ic

5

5

90%

10%

6

t

5

t

t

6

7

ge

I

C

V

ce

Fig.4 Definition of turn-off switching times

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

5/11

GP800FSS12

CURVES

Vge = 20/15/12/10V

1600

Common emitter
T

= 25˚C

1400

case

1200

- (A)

1000

C

800

600

Collector current, I

400

200

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

Fig.5 Typical output characteristics Fig.6 Typical output characteristics

Vge = 20/15/12/10V

1600

Common emitter
T

= 125˚C

case

1400

1200

- (A)

1000

C

800

600

Collector current, I

400

200

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

160

Conditions:

= 25˚C,

T

140

case

V

CE

V

GE

= 600V,
= ±15V

A

120

B

100

- (mJ)

on

80

C

60

Turn-on energy, E

40

20

A : Rg = 6.8Ω
B : R
C : R

0

0 100 200 300 400 500 600 700 800

Collector current, I

- (A)

C

= 4.7Ω

g

= 3.3Ω

g

220

Conditions:

= 125˚C,

T

200

case

V

= 600V,

CE

V

= ±15V

GE

180
160
140

- (mJ)

on

120
100

80

Turn-on energy, E

60
40
20

A : Rg = 6.8Ω
B : R
C : R

0

0 100 200 300 400 500 600 700 800

Collector current, I

- (A)

C

Fig.7 Typical turn-on energy vs collector current Fig.8 Typical turn-on energy vs collector current

A

B

C

= 4.7Ω

g

= 3.3Ω

g

6/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

GP800FSS12

180

Conditions:

160

V

CE

V

GE

= 600V,
= ±15V

= 25˚C,

T

case

140

120

- (mJ)

off

100

80

60

Turn-off energy, E

40

A : Rg = 6.8Ω

20

B : R
C : R

0

0 100 200 300 400 500 600 700 800

Collector current, I

- (A)

C

Fig.9 Typical turn-off energy vs collector current

A

B

C

= 4.7Ω

g

= 3.3Ω

g

250

Conditions:

= 125˚C,

T

case

= 600V,

V

CE

V

= ±15V

GE

200

- (mJ)

150

off

100

Turn-off energy, E

50

A : Rg = 6.8Ω
B : R
C : R

0

0 100 200 300 400 500 600 700 800

Collector current, I

C

- (A)

Fig.10 Typical turn-off energy vs collector current

A
B

C

= 4.7Ω

g

= 3.3Ω

g

70

60

- (mJ)

50

off(Diode)

40

30

20

Diode turn-off energy, E

Conditions:
V

= 600V,

CE

V

= 15V,

GE

R

= 3.3Ω

g

T

T

case

case

= 125˚C

= 25˚C

2000

1800

1600

1400

- (ns)

s

1200

1000

800

Switching times, t

600

400

t

d(off)

t

t

d(on)

Conditions:
T

case

V

CE

V

GE

R

f

g

10

200

t

0

0 200 400 600 800

Collector current, I

C

(A)

0

r

0 100 200 300 400 500 600 700 800

Collector currrent, I

- (A)

C

Fig.11 Typical diode reverse recovery charge vs collector current Fig.12 Typical switching characteristics

= 125˚C,
= 600V
= 15V

= 3.3Ω

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

7/11

GP800FSS12

1600

1400

1200

- (A)

1000

F

Tj = 25˚C

Tj = 125˚C

800

600

Forward current, I

400

200

0

0 0.5 1 1.5 2 2.5 3 3.5

Forward voltage, VF - (V)

Fig.13 Diode typical forward characteristics

2000

1800

1600

1400

- (A)

C

1200

1000

800

Collector current, I

600

400

T

= 125˚C

case

V

= ±15V

ge

200

R

= 3.3Ω*

g

*Recommended minimum value

0

0 200 400

Collector-emitter voltage, V

Fig.14 Reverse bias safe operating area

600

800

ce

- (V)

1000 1200

10000

IC max. (single pulse)

1000

- (A)

C

I

C

max. DC (continuous)

t

p

= 1ms

50µs

100µs

100

Collector current, I

10

1

1 10 100 1000 10000

Collector-emitter voltage, V

ce

- (V)

Fig.15 Forward bias safe operating area Fig.16 Transient thermal impedance

100

- (°C/kW )

th (j-c)

10

1

Transient thermal impedance, Z

0.1
1 10 1000100

Pulse width, t

- (ms)

p

Diode

Transistor

10000

8/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

GP800FSS12

2000

1200

1800

1600

- (A)

1400

C(PK)

1200

1000

PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1

1000

800

- (A)

C

600

800

600

Inverter phase current, I

400

Conditions:

200

T

= 125°C, Tc = 75°C,

j

R

= 3.3Ω, VCC = 600V

g

0

11050

f

- (kHz)

max

Fig.17 3-Phase inverter operating frequency

400

Collector current, I

200

0

0 20 40 60 80 100 120 140 160

Fig.18 DC current rating vs case temperature

Case temperature, T

case

- (˚C)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

9/11

GP800FSS12

Package Details

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.

16

2.5

18.5

6x M4

7

9

12

14.5

62

5

6

8

11
10

11 35

15

15

20

62

57

43.3 18
57

6x Ø7

65

65

13

24

4x M8

38

28

5

140

Nominal weight: 1600g

Module outline type code: F

31.5

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Electrostatic handling precautions AN4502
An introduction to IGBTs AN4503
IGBT ratings and characteristics AN4504
Heatsink requirements for IGBT modules AN4505
Calculating the junction temperature of power semiconductors AN4506
Gate drive considerations to maximise IGBT efficiency AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508
Guidance notes for formulating technical enquiries AN4869
Principle of rating parallel connected IGBT modules AN5000
Short circuit withstand capability in IGBTs AN5167
Driving high power IGBTs with concept gate drivers AN5190

10/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

GP800FSS12

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [e-mail]

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DYNEX SEMICONDUCTOR LTD

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Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

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Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2000 Publication No. DS5239-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

11/11