Datasheet GP800DDS18 Datasheet (DYNEX)

GP800DDS18

13

24

12

11

10

7

6

5

8

9

GP800DDS18

Dual Switch IGBT Module

Replaces October 2000 version, DS5165-4.2 DS5165-5.0 January 2001

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate With Al

■ Low Inductance Internal Construction

■ Full 1800V Rating

■ 800A Per Arm

Substrate

2O3

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.

The GP800DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.

KEY PARAMETERS
V
V
I

C

I

C(PK)

CES
CE(sat)

(typ) 3.5V
(max) 800A
(max) 1600A

2

12(C

)

2(C

)

2

1

7(C

)

Fig. 1 Dual switch circuit diagram

1800V

4(E2)

1(E1)

11(G
10(E

3(C1)

5(E
6(G

2

)

2

)

1

)

1

)

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP800DDS18

Note: When ordering, please use the complete part number.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

www.dynexsemi.com

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Outline type code: D

GP800DDS18

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

= 55˚C for Tj = 125˚C

T

case

1ms, T

T

case

= 100˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

-

Max.

1800

±20

800

1600

6000

4000

Max.

21

40

Units

V

V

A

A

W

V

Units

˚C/kW

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

8

(with mounting grease)

-

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

–40

Electrical connections - M4

Electrical connections - M8

150

-

125

125

-

-

-

5

2

10

˚C

˚C

˚C

Nm

Nm

Nm

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP800DDS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

I

= 40mA, VGE = V

C

CES

CES

, T

CE

VGE = 15V, IC = 800A

= 15V, IC = 800A, , T

V

GE

DC

= 1ms

t

p

= 800A

I

F

= 800A, T

I

F

= 25V, VGE = 0V, f = 1MHz

V

CE

= 125˚C

case

-

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

Typ.

-

-

-

5.5

3.5

4.3

-

-

2.2

2.3

90

20

Max.

1

25

4

6.5

4

5

800

1600

2.5

2.6

-

-

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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GP800DDS18

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

I

rr

E

REC

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Diode reverse current

Diode reverse recovery energy

Symbol

Parameter

Parameter

Test Conditions

= 800A

I

C

= ±15V

V

GE

= 900V

V

CE

R

G(ON)

= R

G(OFF)

= 2.2Ω

L ~ 100nH

I

= 800A, VR = 50% V

F

/dt = 3500A/µs

dI

F

Test Conditions

CES

Min.

,

Min.

Typ.

1000

-

200

-

200

-

300

-

200

-

200

-

180

-

450

-

120

-

Typ.

Max.

1200

Max.

300

300

400

300

300

240

-

-

Units

ns

ns

mJ

ns

ns

mJ

µC

A

mJ

Units

E

E

t

t

E

d(off)

d(on)

Q

t

OFF

t

ON

I

rr

REC

1200

= 800A

R

G(ON)

I

C

= ±15V

V

GE

= 900V

V

CE

= R

G(OFF)

L ~ 100nH

= 2.2Ω

Turn-off delay time

f

Fall time

Turn-off energy loss

Turn-on delay time

r

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Diode reverse current

= 800A, VR = 50% V

F

/dt = 3000A/µs

dI

F

CES

,

I

Diode reverse recovery energy

-

250

-

300

-

400

-

250

-

350

-

300

-

525

-

190

-

1400

350

400

550

350

450

400

ns

ns

mJ

ns

ns

mJ

µC

-

-

A

mJ

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

TYPICAL CHARACTERISTICS

GP800DDS18

Vge = 20/15/12V

1600

Common emitter

= 25˚C

T

case

1400

1200

- (A)

1000

c

800

600

Collector current, I

400

200

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

Collector-emitter voltage, V

ce

- (V)

Fig.3 Typical output characteristics Fig.4 Typical output characteristics

V

= 10V

ge

Vge = 20/15/12V

1600

Common emitter

= 125˚C

T

1400

case

1200

- (A)

1000

C

800

600

Collector current, I

400

200

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Collector-emitter voltage, V

ce

- (V)

Vge = 10V

350

T

case

V

GE

V

300

CE

R

= 2.2Ω

g

250

200

150

Energy - (mJ)

100

= 125˚C
= ±15V
= 900V

E

ON

E

OFF

E

REC

700

600

- (mJ)

500

off(diode)

400

300

200

T

case

V

= ±15V

GE

= 900V

V

CE

= 800A

I

C

= 125˚C

E

Diode turn-off energy, E

50

0

0800100 200

300 400 500 600

Collector current, I

- (A)

C

700

100

0

012345678910

Gate resistance, R

- (Ohms)

G

Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance

ON

E

E

OFF

REC

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10

www.dynexsemi.com

GP800DDS18

ge,

)

1600

1400

Tj = 25˚C

1200

1000

- (A)

F

800

600

Foward current, I

400

200

0

0

0.5 1.0 1.5
Foward volta

2.0
V

Fig.7 Diode typical forward characteristics

Tj = 125˚C

2.5 3.0 3.5

- (V

2000

1800

1600

1400

- (A)

C

1200

1000

800

Collector current, I

600

T

= 125˚C

case

400

V

= ±15V

ge

R

= 2.2Ω

g(min)

200

0

0 400 800

Fig.8 Reverse bias safe operating area

1200

Collector-emitter voltage, V

ce

- (V)

1600

2000

10000

IC max. (single pulse)

1000

50µs

- (A)

C

I

C

max. DC (continuous)

t

p

= 1ms

100µs

100

Collector current, I

10

Conditions:
T

= 125˚C, T

vj

1

1 10 100 1000 10000

= 50˚C

case

Collector-emitter voltage, V

ce

- (V)

Fig.9 Forward bias safe operating area

100

- (°C/kW )

th (j-c)

10

1

Transient thermal impedance, Z

0.1
1 10 1000100

Pulse width, tp - (ms)

Fig.10 Transient thermal impedance

Diode

Transistor

10000

6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

GP800DDS18

1600

1400

1200

- (A)

C(PK)

1000

PWM Sine Wave
Power Factor = 0.9,
Modulation Index =1

900

800

700

600

- (A)

C

500

800

400

600

300

400

Inverter phase current, I

DC collector current, I

200

Conditions:

200

T

= 125˚C, T

j

= 2.2Ω, VCC = 900V

R

g

0

11030

Fig.17 3-Phase inverter operating frequency

case

= 75˚C

f

max

- (kHz)

100

0

0 20 40 60 80 100 120 140 160

Fig.18 DC current rating vs case temperature

Case temperature, T

case

- (˚C)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10

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GP800DDS18

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

13

24

16

18

26

13

6x M4

12

7

14

11

9

10

11.5

62

15

15

5

6

8

35

20

62

65

13

24

4x M8

57

43.3 11.85
57

6x Ø7

65

38

28

5

140

Nominal weight: 1600g

Module outline type code: D

8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

31.5

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ASSOCIATED PUBLICATIONS

Title Application Note

Number

Electrostatic handling precautions AN4502
An introduction to IGBTs AN4503
IGBT ratings and characteristics AN4504
Heatsink requirements for IGBT modules AN4505
Calculating the junction temperature of power semiconductors AN4506
Gate drive considerations to maximise IGBT efficiency AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508
Guidance notes for formulating technical enquiries AN4869
Principle of rating parallel connected IGBT modules AN5000
Short circuit withstand capability in IGBTs AN5167
Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384

POWER ASSEMBLY CAPABILITY

GP800DDS18

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10

www.dynexsemi.com

GP800DDS18

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontarion, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Central Europe Tel: [phone]. Fax: [phone]
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SALES OFFICES

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Tel: [phone]. Fax: [phone].
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5165-5 Issue No. 5.0 January 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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