Datasheet GP800DDM12 Datasheet (DYNEX)

GP800DDM12

13

24

12

11

10

7

6

5

8

9

GP800DDM12

Hi-Reliability Dual Switch IGBT Module

Advance Information

Replaces May 2000 version, DS5291-1.3 DS5291-2.0 October 2000

FEATURES

■ High Thermal Cycling Capability

■ 800A Per Switch

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Resonant Converters

The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.

The GP800DDM12 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.

KEY PARAMETERS
V
V
I

C

I

C(PK)

CES
CE(sat)

(typ) 2.7V
(max) 800A
(max) 1600A

2

12(C

)

2(C

)

2

1

7(C

)

Fig. 1 Dual switch circuit diagram

1200V

4(E2)

1(E1)

11(G
10(E

3(C1)

5(E
6(G

2

)

2

)

1

)

1

)

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP800DDM12

Note: When ordering, please use the whole part number.

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11

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Outline type code: D

GP800DDM12

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

= 80˚C

T

case

1ms, T

T

case

= 105˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

-

Max.

1200

±20

800

1600

6490

4000

Max.

18

40

Units

V

V

A

A

W

V

Units

˚C/kW

˚C/kW

R

th(c-h)

T

T

stg

-

Thermal resistance - case to heatsink (per module)

Junction temperature

j

Storage temperature range

Screw torque

junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M4

Electrical connections - M8

-

-

-

–40

-

-

-

8

150

125

125

5

2

10

˚C/kW

˚C

˚C

˚C

Nm

Nm

Nm

2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP800DDM12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

V

= 0V, VCE = V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 120mA, VGE = V

I

C

CES

CES

, T

CE

VGE = 15V, IC = 800A

= 15V, IC = 800A, , T

V

GE

DC, T

t

p

I

F

I

F

V

= 50˚C

case

= 1ms

= 800A

= 800A, T

= 25V, VGE = 0V, f = 1MHz

CE

= 125˚C

case

-

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

2.7

3.2

-

-

2.2

2.3

90

20

Max.

1

50

±4

7.5

3.5

4

800

1600

2.4

2.5

-

-

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11

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GP800DDM12

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Symbol

t

d(off)

Turn-off delay time

Parameter

Parameter

Test Conditions

= 800A

I

C

V

= ±15V

GE

= 600V

V

CE

R

G(ON)

= R

G(OFF)

= 3.3Ω

L ~ 100nH

IF = 800A, VR = 50% V

/dt = 2000A/µs

dI

F

Test Conditions

= 800A

I

C

Min.

,

CES

-1

Min.

Typ.

1100

-

150

-

130

-

800

-

320

-

-

150

-

Typ.

1300

-

Max.

1300

90

Max.

1500

200

170

900

400

130

200

Units

ns

ns

mJ

ns

ns

mJ

µC

Units

ns

E

t

E

t

OFF

d(on)

t

ON

Q

200

= ±15V

R

G(ON)

V

GE

= 600V

V

CE

= R

G(OFF)

L ~ 100nH

= 3.3Ω

f

Fall time

Turn-off energy loss

Turn-on delay time

r

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

IF = 800A, VR = 50% V

dI

/dt = 2000A/µs

F

,

CES

-1

-

170

-

950

-

350

-

150

-

200

-

250

250

1200

450

200

260

ns

mJ

ns

ns

mJ

µC

4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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TYPICAL CHARACTERISTICS

0

20

40

60

80

100

120

140

160

180

200

220

0 100 200 300 400 500 600 700 800

Collector current, I

C

- (A)

Turn-on energy, E

on

- (mJ)

A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω

A

B

C

Conditions:
T

case

= 125˚C,
VCE = 600V,
VGE = ±15V

GP800DDM12

Vge = 20/15/12/10V

1600

Common emitter
T

= 25˚C

1400

case

1200

- (A)

1000

C

800

600

Collector current, I

400

200

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics

Vge = 20/15/12/10V

1600

Common emitter
T

= 125˚C

case

1400

1200

- (A)

1000

C

800

600

Collector current, I

400

200

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

160

140

120

100

- (mJ)

on

80

60

Turn-on energy, E

40

20

Fig. 5 Typical turn-on energy vs collector current Fig. 6 Typical turn-off energy vs collector current

Conditions:

= 25˚C,

T

case

V

CE

V

GE

= 600V,
= ±15V

A

B

C

A : Rg = 6.8Ω
B : R
C : R

= 4.7Ω

g

= 3.3Ω

g

0

0 100 200 300 400 500 600 700 800

Collector current, I

- (A)

C

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/11

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GP800DDM12

180

160

140

Conditions:

= 25˚C,

T

case

= 600V,

V

CE

V

= ±15V

GE

A

250

200

Conditions:

= 125˚C,

T

case

= 600V,

V

CE

V

= ±15V

GE

B

120

- (mJ)

off

100

C

- (mJ)

150

off

80

100

60

Turn-off energy, E

40

A : Rg = 6.8Ω

20

B : R
C : R

0

0 100 200 300 400 500 600 700 800

Collector current, I

- (A)

C

= 4.7Ω

g

= 3.3Ω

g

Turn-off energy, E

50

A : Rg = 6.8Ω
B : R
C : R

0

0 100 200 300 400 500 600 700 800

Collector current, I

- (A)

C

Fig.7 Typical turn-off energy vs collector current Fig.8 Typical turn-off energy vs collector current

A
B

C

= 4.7Ω

g

= 3.3Ω

g

70

60

- (mJ)

50

off(Diode)

40

30

20

Diode turn-off energy, E

Conditions:

= 600V,

V

CE

= 15V,

V

GE

R

= 3.3Ω

g

T

case

T

= 125˚C

= 25˚C

case

2000

1800

1600

1400

- (ns)

s

1200

1000

800

Switching times, t

600

400

t

d(off)

t

f

t

d(on)

Conditions:
T

case

V

CE

V

GE

R

g

10

200

t

0

0 200 400 600 800

Collector current, I

C

(A)

0

r

0 100 200 300 400 500 600 700 800

Collector currrent, I

- (A)

C

Fig.9 Typical diode reverse recovery charge vs collector current Fig.10 Typical switching characteristics

= 125˚C,
= 600V
= 15V

= 3.3Ω

6/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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1600

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 200 400

600

800

1000 1200

Collector-emitter voltage, V

ce

- (V)

Collector current, I

C

- (A)

T

case

= 125˚C

V

ge

= ±15V

R

g

= 3.3Ω*

*Recommended minimum value

1400

1200

- (A)

1000

F

800

600

Forward current, I

400

200

Tj = 25˚C

GP800DDM12

Tj = 125˚C

0

0 0.5 1 1.5 2 2.5 3 3.5

Forward voltage, V

- (V)

F

Fig.11 Diode typical forward characteristics Fig.12 Reverse bias safe operating area

10000

IC max. (single pulse)

1000

- (A)

C

100

Collector current, I

10

I

C

max. DC (continuous)

t

= 50µs

p

t

= 100µs

p

= 1ms

t

p

100

- (°C/kW )

th (j-c)

10

1

Transient thermal impedance, Z

Diode

Transistor

1

1 10 100 1000 10000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/11

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0.1
1 10 1000100

Collector-emitter voltage, V

ce

- (V)

Pulse width, t

- (ms)

p

Fig.13 Forward bias safe operating area Fig.14 Transient thermal impedance

10000

GP800DDM12

2000

1800

PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1

1400

1200

1600

- (A)

1400

C(PK)

1200

1000

- (A)

C

800

1000

800

600

Inverter phase current, I

400

Conditions:

200

= 125°C, Tc = 75°C,

T

j

= 3.3Ω, VCC = 600V

R

g

0

11050

f

- (kHz)

max

600

400

DC collector current, I

200

0

0 20 40 60 80 100 120 140 160

Case temperature, T

case

Fig.15 3-Phase inverter operating frequency Fig.16 DC current rating vs case temperature

- (˚C)

8/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP800DDM12

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

13

24

16

18

26

13

6x M4

12

7

14

11

9

10

11.5

62

15

15

5

6

8

35

20

62

65

13

24

4x M8

57

43.3 11.85
57

6x Ø7

65

38

28

5

140

Nominal weight: 1000g

Module outline type code: D

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/11

31.5

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GP800DDM12

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Electrostatic handling precautions AN4502
An introduction to IGBTs AN4503
IGBT ratings and characteristics AN4504
Heatsink requirements for IGBT modules AN4505
Calculating the junction temperature of power semiconductors AN4506
Gate drive considerations to maximise IGBT efficiency AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508
Guidance notes for formulating technical enquiries AN4869
Principle of rating parallel connected IGBT modules AN5000
Short circuit withstand capability in IGBTs AN5167
Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

GP800DDM12

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Central Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Central Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5291-2 Issue No. 2.0 October 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/11

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