Datasheet GP400LSS12 Datasheet (DYNEX)

GP400LSS12

2(E)

3(G

1

)

1(C)

5(E1)

4(C1)

12

3

5

4

GP400LSS12

Single Switch IGBT Module

Replaces February 2000 version, DS5306-1.2 DS5306-2.3 November 2000

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

■ 1200V Rating

■ 400A Per Module

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.

The GP400LSS12 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.

KEY PARAMETERS
V
V
I

C

I

C(PK)

CES
CE(sat)

(typ) 2.7V
(max) 400A
(max) 800A

Fig. 1 Single switch circuit diagram

1200V

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP400LSS12

Note: When ordering, please use the compete part number.

Outline type code: L

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

GP400LSS12

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor

Thermal resistance - diode

Parameter

Test Conditions

= 0V

V

GE

-

DC, T

1ms, T

T

= 75˚C

case

= 80˚C

case

= 25˚C, Tj = 150˚C

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

-

Max.

1200

±20

400

800

2980

2500

Max.

42

80

Units

V

V

A

A

W

V

Units

˚C/kW

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

15

˚C/kW

(with mounting grease)

-

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

–40

Electrical connections - M4

150

-

125

125

-

-

5

2

˚C

˚C

˚C

Nm

Nm

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP400LSS12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 20mA, VGE = V

I

C

CES

CES

, T

CE

VGE = 15V, IC = 400A

= 15V, IC = 400A, , T

V

GE

DC, T

t

p

I

F

I

F

V

= 50˚C

case

= 1ms, T

case

= 80˚C

= 400A

= 400A, T

= 25V, VGE = 0V, f = 1MHz

CE

= 125˚C

case

-

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

2.7

3.2

-

-

2.2

2.3

45

15

Max.

1

25

±2

6.5

3.5

4

400

800

2.4

2.5

-

-

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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GP400LSS12

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Symbol

t

d(off)

Turn-off delay time

Parameter

Parameter

Test Conditions

= 400A

I

C

= ±15V

V

GE

= 600V

V

CE

R

G(ON)

= R

G(OFF)

= 3.3Ω

L ~ 100nH

IF = 400A, VR = 50% V

/dt = 2000A/µs

dI

F

Test Conditions

= 400A

I

C

CES

Min.

,

Min.

Typ.

700

-

120

-

-

600

-

150

-

-

-

Typ.

900

-

Max.

60

35

30

Max.

1100

850

160

80

750

200

75

40

Units

ns

ns

mJ

ns

ns

mJ

µC

Units

ns

E

t

E

d(on)

Q

t

OFF

t

ON

200

= ±15V

R

G(ON)

V

GE

= 600V

V

CE

= R

G(OFF)

L ~ 100nH

= 3.3Ω

f

Fall time

Turn-off energy loss

Turn-on delay time

r

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

IF = 400A, VR = 50% V

/dt = 2000A/µs-1

dI

F

CES

,

-

-

-

-

-

-

85

700

180

55

55

250

100

850

230

80

70

ns

mJ

ns

ns

mJ

µC

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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TYPICAL CHARACTERISTICS

GP400LSS12

Vge = 20/15/12/10V

800

Common emitter

= 25˚C

T

case

700

600

- (A)

500

C

400

300

Collector current, I

200

100

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics

Vge = 20/15/12/10V

800

Common emitter

= 125˚C

T

case

700

600

- (A)

500

C

400

300

Collector current, I

200

100

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

80

70

60

50

- (mJ)

on

Conditions:

= 125˚C,

T

case

= 600V,

V

CE

VGE = ±15V

A
B

C

90

80

70

60

- (mJ)

off

50

Conditions:
T

= 125˚C,

case

= 600V,

V

CE

V

= ±15V

GE

40

40

30

Turn-on energy, E

20

10

A : Rg = 6.2Ω
B : Rg = 4.7Ω

= 3.3Ω

C : R

g

0

50 100 150 200 250 300 350 400 450

Collector current, I

- (A)

C

Turn-off energy, E

30

20

10

A : Rg = 6.2Ω
B : R
C : R

0

50 100 150 200 250 300 350 4000

Collector current, I

- (A)

C

Fig. 5 Typical turn-on energy vs collector current Fig. 6 Typical turn-off energy vs collector current

A

= 4.7Ω

g

= 3.3Ω

g

B

C

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10

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GP400LSS12

0

100

200

300

400

500

600

700

800

900

1000

0 200 400

600

800

1000 1200

Collector-emitter voltage, V

ce

- (V)

Collector current, I

C

- (A)

T

case

= 125˚C

V

ge

= ±15V

R

g

= 4.7Ω*

*Recommended minimum value

40

Conditions:
V

= 600V,

CE

V

GE

R

g

= 15V,

= 4.7Ω

T

case

= 125˚C

35

30

- (mJ)

25

off(Diode)

20

T

= 25˚C

case

15

10

Diode turn-off energy, E

5

0

0 100 200 300 400

Collector current, I

C

(A)

Fig. 7 Typical diode turn-off energy vs collector current

1000

900

800

t

d(off)

700

t

- (ns)

s

600

500

400

Switching times, t

300

d(on)

Conditions:
T

case

V

CE

V

GE

R

g

200

t

100

f

t

r

0

0 50 100 150 200 250 300 350 400

Collector currrent, I

- (A)

C

Fig.8 Typical switching characteristics

= 125˚C,
= 600V
= 15V

= 3.3Ω

800

700

600

500

- (A)

F

Tj = 25˚C

Tj = 125˚C

400

300

Forward current, I

200

100

0

0 0.5 1 1.5 2 2.5 3 3.5

Forward voltage, V

- (V)

F

Fig. 9 Diode typical forward characteristics

Fig. 10 Reverse bias safe operating area

6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP400LSS12

10000

1000

- (A)

C

IC max. (single pulse)

100

I

C

max. DC (continuous)

t

Collector current, I

10

1

1 10 100 1000 10000

Collector-emitter voltage, V

ce

- (V)

Fig. 11 Forward bias safe operating area

t

= 50µs

p

= 100µs

p

= 1ms

t

p

100

Diode

- (°C/kW )

th (j-c)

10

1

Transient thermal impedance, Z

0.1
1 10 1000100

Pulse width, t

Fig. 12 Transient thermal impedance

- (ms)

p

Transistor

10000

1000

900

PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1

700

600

800

- (A)

700

C(PK)

600

500

- (A)

C

400

500

400

300

Inverter phase current, I

200

Conditions:

100

= 125°C, Tc = 75°C,

T

j

R

= 3.3Ω, VCC = 600V

g

0

11050

f

- (kHz)

max

300

200

DC collector current, I

100

0

0 20 40 60 80 100 120 140 160

Case temperature, T

case

Fig. 13 3 Phase inverter operating frequency Fig. 14 DC current rating vs case temperature

- (˚C)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10

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GP400LSS12

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

4x Ø6.5

48

61.4

3x M4

23

40

46.5

3.5x6

4

5

24

5

27

3

20

2x M6

6x5.5

2

106.4

46.5
16

1

20

29

36max

Nominal weight: 270g

Recommeded fixings for mounting: M6

Recommended mounting torque: 5Nm (44lbs.ins)

Recommended torque for electrical connections (M4): 2Nm (17lbs.ins)

Module outline type code: L

8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ASSOCIATED PUBLICATIONS

Title Application Note

Number

Electrostatic handling precautions AN4502
An introduction to IGBTs AN4503
IGBT ratings and characteristics AN4504
Heatsink requirements for IGBT modules AN4505
Calculating the junction temperature of power semiconductors AN4506
Gate drive considerations to maximise IGBT efficiency AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508
Guidance notes for formulating technical enquiries AN4869

Principle of rating parallel connected IGBT modules AN5000
Short circuit withstand capability in IGBTs AN5167
Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384

POWER ASSEMBLY CAPABILITY

GP400LSS12

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10

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GP400LSS12

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.

Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.

Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Central Europe Tel: [phone]. Fax: [phone]
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5306-2 Issue No. 2.2 October 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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