Datasheet G8941-03, G8941-02, G8941-01 Datasheet (HAMAMATSU)

PHOTODIODE

InGaAs PIN photodiode

G8941 series

Sub-mount type photodiode for LD monitor

Features

l

Active area
G8941-01: φ1 mm
G8941-02: φ0.5 mm
G8941-03: φ0.3 mm

l

Miniature package: 2 × 2 × 1 mm

l

Precise chip position tolerance: ±0.075 mm

Applications

l

LD monitor

■ General rating

Parameter G8941-01 G8941-02 G8941-03 Unit

Active area

f1 f0.5 f0.3

■ Absolute maximum ratings

Parameter Symbol Remark G8941-01 G8941-02 G8941-03 Unit

Reverse voltage

Operating
temperature
Storage
temperature

* In N environment or in vacuum

VR

Max

.

Topr -40 to +85 °C

*

Ts t g

10 20 20 V

-55 to +125 °C

■ Electrical and optical characteristics (Ta=25 °C)

Parameter Symbol Condition

Spectral
response range

Photo sensitivity S

Dark current I
Shunt resistance Rsh VR=10 mV - 100 - - 300 - - 1000 ­Te rm in al
capacitance
Cut-off
frequency
Noise equivalent
power
Detectivity

l

D

Ct

fc

NEP

D*

l=1.31 µm
l=1.55 µm

VR=5 V - 1 5 - 0.5 2.5 - 0.3 1.5 nA

=5 V,

R

V
f=1 MHz
VR=5 V,
RL=50 W

l=lp

l=lp

G8941-01 G8941-02 G8941-03

Min. Typ . Max. Min. Typ. Max. Min. Typ. Max.

0.9 to 1.7 0.9 to 1.7 0.9 to 1.7 µm

0.8 0.9 - 0.8 0.9 - 0.8 0.9 -

0.85 0.95 - 0.85 0.95 - 0.85 0.95 -

-90- -12- - 5 - pF

- 35 - - 200 - - 400 - MHz

2 × 10

5 × 10

-14

12

8 × 10

5 × 10

-15

12

4 × 10

5 × 10

-15

12

mm

Unit

A/W

MW

W/Hz

cmHz

1/2

1/2

/W

1

InGaAs PIN photodiode

G8941 series

■ Spectral response

1

0.5

PHOTO SENSITIVITY (A/W)

0.8 1.0 1.2 1.4 1.6 1.8

0.6

WAVELENGTH (µm)

(Typ. Ta=25 ˚C)

2.0

■ Terminal capacitance vs. reverse voltage

1 nF

100 pF

(Typ. Ta=25 ˚C, f=1 MHz)

G8941-01

KIRDB0002EB

■ Dark current vs. reverse voltage

10 nA

G8941-01

1 nA

100 pA

DARK CURRENT

10 pA

0.01 0.1 1 10 100

G8941-03

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C)

G8941-02

■ Dark current vs. temperature

100 nA

10 nA

1 nA

G8941-01

G8941-02

(Typ. V

R

=5 V)

KIRDB0270EB

CAPACITANCE

10 pF

G8941-03

1 pF

0.01 0.1 1 10 100

REVERSE VOLTAGE (V)

G8941-02

100 pA

DARK CURRENT

10 pA

1 pA

-60 -40 -20 0 20 40 60 80 100

G8941-03

TEMPERATURE (˚C)

KIRDB0271EA KIRDB0272EA

2

■ Dimensional outline (unit: mm)

1.175

0.05

G8941-01 G8941-02

InGaAs PIN photodiode

G8941 series

1.175

1.175

1

0.2

0.2

1 ± 0.1

0.2

0.2

0.5

2 ± 0.05

0.925

2 ± 0.05

2 ± 0.05

1.0

PHOTOSENSITIVE
SURFACE

(0.25)

0.40.4

1

2 ± 0.0512 ± 0.05

(0.1) 0.1

ACTIVE AREA

Tolerance unless otherwise noted: ± 0.075
Values in parentheses are not
guaranteed, but for reference.

G8941-03

PHOTOSENSITIVE
SURFACE

(0.25)

0.40.4

1

2 ± 0.0512 ± 0.05

(0.1) 0.1

ACTIVE AREA

0.3

0.2

0.3

1 ± 0.1

(0.8)

1 ± 0.1

(0.8)

ANODE

(0.1)

(0.4)(0.4)

(1)

CATHODE

KIRDA0159EA

ANODE

(0.1)

(0.4)(0.4)

(1)

CATHODE

PHOTOSENSITIVE

2 ± 0.05

2 ± 0.05

(0.25)

0.40.4

1

1

2 ± 0.05

2 ± 0.05

(0.1) 0.1

ACTIVE AREA

Tolerance unless otherwise noted: ± 0.075
Values in parentheses are not
guaranteed, but for reference.

0.2

0.2

1

0.6

1 ± 0.1

SURFACE

0.2

0.5

1 ± 0.1

(0.8)

ANODE

(0.1)

(0.4)(0.4)

(1)

CATHODE

KIRDA0160EA

1 ± 0.1

2 ± 0.05

Tolerance unless otherwise noted: ± 0.075
Values in parentheses are not
guaranteed, but for reference.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.

KIRDA0161EA

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Cat. No. KIRD1054E03
Jul. 2002 DN

3