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PHOTODIODE
InGaAs PIN photodiode
G8370 series
Large active areas from φ1 to φ5 mm
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes
with active areas from φ1 to φ5 mm.
Features
l
Low noise, low dark current
l
Large active area
l
Various active area sizes available
Specifications / Absolute maximum ratings
■
Dimensional
Type No.
G8370-01
G8370-02
G8370-03
G8370-05
outline/
Window
material *
1
/K TO-18
➀
/K TO-5
➁
/K TO-8
➂
Package
Applications
l
Laser monitor
l
Optical power meter
l
Laser diode life test
Absolute maximum ratings
Active area
(mm) (V) (°C) (°C)
1
φ
2
φ
3
φ
5
φ
Reverse
voltage
VR Max.
10
5
2
Operating
temperature
Topr
-40 to +85 -55 to +125
temperature
Storage
Tstg
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
■
Cut-off
D
Max.
(nA)
frequency
fc
=1 V
V
R
=50
R
L
-3 dB
(MHz) (pF)
2
35 *
455025
2 1000 10
0.6 3500 3
Spectral
response
Type No.
G8370-01 1 *25 *
G8370-02 525
G8370-03 15 75
G8370-05
*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
=5 V
*2: V
R
range
(µm) (µm)
0.9 to 1.7 1.55 0.9 0.95
Peak
se nsitivity
wavelength
p
λ
Photo
sensitivity
1.3 µm
(A/W)
S
λ=λ
(A/W)
p
Dark
current
I
VR=1 V
Typ.
(nA)
25 125
Ω
2
Terminal
capacitance
Ct
=1 V
V
R
f=1 MHz
2
90 *
Shunt
resistance
Rsh
=10 mV
V
R
(MΩ)
100 2 × 10
D
λ=λ
(cm ·Hz
5 × 10
∗
p
1/2
/W )
12
NEP
λ=λ
(W/Hz
4 × 10
6 × 10
1 × 10
p
1/2
)
-14
-14
-14
-13
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InGaAs PIN photodiode
G8370 series
■ Spectral response
1
0.5
(Typ. Ta=25 ˚C)
■ Photo sensitivity temperature characteristic
2
1
0
PHOTO SENSITIVITY (A/W)
TEMPERATURE COEFFICIENT (%/˚C)
0.8 1.0 1.2 1.4 1.6 1.8
0.6
WAVELENGTH (µm)
2.0
KIRDB0002EB KIRDB0042EA
-1
1.0 1.2 1.4 1.6 1.80.8
WAVELENGTH (µm)
■ Photo sensitivity linearity ■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
102
100
98
96
94
RELATIVE SENSITIVITY (%)
92
90
02 6 1012 16
(Typ. Ta=25 ˚C, λ=1.3 µm, R
G8370-05
48 14
L=2 Ω, VR=0 V)
G8370-01
G8370-02
INCIDENT LIGHT LEVEL (mW)
G8370-03
1 µA
100 nA
10 nA
1 nA
G8370-05
(Typ. Ta=25 ˚C)
G8370-03
G8370-02
DARK CURRENT
100 pA
10 pA
0.01 0.1 1 10 100
G8370-01
REVERSE VOLTAGE (V)
KIRDB0245EA KIRDB0246EA
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InGaAs PIN photodiode
G8370 series
■ Terminal capacitance vs. reverse voltage
10 nF
1 nF
100 pF
10 pF
TERMINAL CAPACITANCE
1 pF
0.01 0.1 1 10 100
(Typ. Ta=25
G8370-01
REVERSE VOLTAGE (V)
˚C, f=1 MHz)
G8370-05
G8370-03
G8370-02
■ Dimensional outlines (unit: mm)
KIRDB0247EA
■ Shunt resistance vs. ambient temperature
10 GΩ
1 GΩ
100 MΩ
10 MΩ
SHUNT RESISTANCE
1 MΩ
100 kΩ
-40 -20 0 40 60 80 100
G8370-05
AMBIENT TEMPERATURE (˚C)
G8370-01
20
(Typ. V
G8370-02
G8370-03
R=10 mV)
KIRDB0248EA
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.5 ± 0.2
5.4 ± 0.2
4.7 ± 0.1
WINDOW
2.2 MIN.
CASE
± 0.2
2.7
± 0.2
3.7
13 MIN.
➁ G8370-02/-03➀ G8370-01
9.2 ± 0.2
8.3 ± 0.1
WINDOW
4.5 MIN.
2.5 ± 0.20.4 MAX.
4.9 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.1 ± 0.3
1.5 MAX.
CASE
18 MIN.
KIRDA0154EC
KIRDA0155EB
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➂ G8370-05
13.8 ± 0.2
12.4 ± 0.1
WINDOW
7.0 MIN.
4.9 ± 0.2
2.8 ± 0.2
InGaAs PIN photodiode
G8370 series
PHOTOSENSITIVE
SURFACE
0.45
LEAD
1.0
CASE
7.5 ± 0.2
0.5
14 MIN.
INDEX MARK
KIRDA0052EC
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
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Cat. No. KIRD1050E03
Feb. 2002 DN
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