Datasheet G8909-01 Datasheet (HAMAMATSU)

PHOTODIODE

InGaAs PIN photodiode array

G8909-01

Photodiode array for DWDM monitor

Features

l

250 µm pitch, 40 ch parallel readout

l

Low cross-talk

l

Precise chip position tolerance: ±0.05 mm

Applications

l

DWDM monitor with AWG

■ General ratings

Parameter Value Unit

Active area f0.08 mm

Pixel pitch 250 µm
Number of elements 40 ch

■ Absolute maximum ratings

Parameter Symbol Remark Value Unit

Reverse voltage VR Max
Allowable input power P
Operating temperature Topr -40 to +85 °C
Storage temperature Ts tg

* In N environment or in vacuum

.

Max. 10 mV

in

*

6V

-40 to +85 °C

■ Electrical and optical characteristics (Ta=25 °C, per 1 element)

Parameter Symbol Condition Min. Typ . Max. Unit

Spectral response range l - 0.9 to 1.7 - µm

Photo sensitivity S

Photo response non-uniformity PRNU - - ±5 %
Dark current I
Shunt resistance Rsh VR=10 mV - 8 - GW
Terminal capacitance Ct VR=5 V, f=1 MHz - 1.4 - pF
Cross-talk - VR=0.1 V - -33 - dB

PRELIMINARY DATA

Apr. 2002

l=1.31 µm
l=1.55 µm

VR=5 V - 0.02 0.2 nA

D

0.8 0.9 -

0.85 0.95 -

A/W

1

InGaAs PIN photodiode array

G8909-01

■ Spectral response

1

0.5

PHOTO SENSITIVITY (A/W)

0.8 1.0 1.2 1.4 1.6 1.8

0.6

WAVELENGTH (µm)

(Typ. Ta=25 ˚C)

2.0

■ Terminal capacitance vs. reverse voltage

10 pF

(Typ. Ta=25 ˚C, f=1 MHz)

KIRDB0002EB

■ Dark current vs. reverse voltage

1 nA

100 pA

10 pA

DARK CURRENT

1 pA

0.01 0.1 1

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C)

■ Dark current vs. temperature

100 nA

10 nA

10

(Typ. V

R

=5 V)

100

KIRDB0266EA

1 pF

TERMINAL CAPACITANCE

100 fF

0.01 0.1 1

REVERSE VOLTAGE (V)

■ Cross-talk characteristic

(Typ. Ta=25 ˚C, λ=1.55 µm, SPOT= 20 µm, Pin=5 nW, VR=0.1 V)

100

250 µm

10

1

0.1

RELATIVE SENSITIVITY (%)

0.01

-250 -200 -100

1 nA

DARK CURRENT

100 pA

10

100

10 pA

20 30 50

7040 60

80

TEMPERATURE (˚C)

KIRDB0267EA KIRDB0268EA

-50-150

0

POSITION X (µm)

KIRDB0269EA

2

■ Dimensional outline (unit: mm)

ANODE PAD
(PITCH: 400 µm, 40 ch,

150 × 150 µm BOND PADS)

22.0

2.1

(0.1)

0.4

InGaAs PIN photodiode array

CATHODE PAD

0.80.5

G8909-01

2.52.0

10.5

DETAIL a

a

0.80

(0.15)

0.70 ± 0.05 *

* The center of the active area

to the bottom of the substrate

KIRDA0158EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.

Cat. No. KIRD1053E02
Feb. 2003 DN

3