Datasheet G8605-25, G8605-23, G8605-22, G8605-21, G8605-15 Datasheet (HAMAMATSU)

PHOTODIODE

InGaAs PIN photodiode

G8605 series

Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response

InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 ˚C)
and two-stage (-20 ˚C) thermoelectrically cooled types are provided.

Features

l

High-speed response

l

Low noise

l

Various active area sizes available from φ1 to φ5 mm

Specifications / Absolute maximum ratings

■

Dimensional

Type No.

G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25

outline/

Window

m aterial *

/K

➀

/K

➁

Package Cooling

One-stage
TE-cooled

TO-8

Two-stage
TE-cooled

Applications

l

Optical power meter

l

Water content analyzer

l

Laser diode life test

Accessories (Optional)

l

Preamp for InGaAs PIN photodiode C4159-02

(High-speed type)

l

Preamp for InGaAs PIN photodiode C4159-03
(High sensitivity type)

l

Heatsink for one-stage TE-cooled type A3179

l

Heatsink for two-stage TE-cooled type A3179-01

l

Temperature controller for TE-cooled type C1103-04

Absolute maximum ratings

Active

area

(mm) (mW) (A) (V) (°C) (°C)

φ
φ
φ
φ
φ
φ
φ
φ

1
2
3
5
1
2
3
5

Thermistor

power

dissipation

0.2

TE-cooler

allowable

current

1.5

1.0

Reverse

voltage

Max.

V

R

5
5
5
2
5
5
5
2

Operating

temperature

Topr

-40 to +70 -55 to +85

Storage

temperature

Tstg

Electrical and optical characteristics (Typ. unless otherwise noted)

■

Measurement

condition

Type No.

G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25

* Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)

Element

tem perature

(°C) (µm) (µm)

-10

-20

Spectral

response

range

λ

0.9 to 1.67

0.9 to 1.65

Peak

se nsitivity

wavelength

p

λ

1.55

Photo

sensitivity

S

1.3 µm
(A/W )

(A/W )

0.9 0.95

λ=λ

Dark current

I

D

VR=1 V

p

Typ.

Max.

(nA )

0.07 0.35

0.3 1.5
15

2.5 12.5

0.03 0.15

0.15 0.75

0.5 2.5

1.2 6

(nA )

Cut-off

frequency

fc

VR=1 V

=50

R

L

(MHz) (pF)

18 150 1500 5 × 10

4 550 300 1 × 10
2 1000 100 2 × 10

0.6 3500 30
18 150 3000 3 × 10

4 550 600 7 × 10
2 1000 200 1 × 10

0.6 3500 60

Ω

Terminal

capacitance

Ct

VR=1 V

f=1 MHz

Shunt

resistance

Rsh

VR=10 mV

(MΩ)

D

λ=λ

(cm ·Hz

2 × 10

3 × 10

∗

1/2

p

/W )

13

13

NEP

λ=λ

(W/Hz

3 × 10

2 × 10

p

1/2

)

-15

-14

-14

-14

-15

-15

-14

-14

1

InGaAs PIN photodiode

100 nA

0.01 0.1 1 10 100

REVERSE VOLTAGE (V)

DARK CURRENT

10 nA

100 pA

10 pA

1 nA

1 µA

(Typ. Ta=25

˚C

)

G8605-15/-25

G8605-13/-23

G8605-12/-22

G8605-11/-21

G8605 series

■

Spectral response

1

T=25 ˚C
T= -10 ˚C
T= -20 ˚C

0.5

PHOTO SENSITIVITY (A/W)

0.8 1.0 1.2 1.4 1.6 1.8

0.6

Spectral response shifts towards the
short wavelength side when cooled.
One-stage TE-cooled type: λc=1.67 µm
Two-stage TE-cooled type: λc=1.65 µm

WAVELENGTH (µm)

(Typ.)

2.0

KIRDB0184EA

■

Photo sensitivity temperature characteristic

2

1

0

(Typ. Ta=25

˚C

TEMPERATURE COEFFICIENT (%/˚C)

-1

1.0 1.2 1.4 1.6 1.80.8

WAVELENGTH (µm)

)

KIRDB0042EA

■

Photo sensitivity linearity

˚C

102

100

98

96

94

RELATIVE SENSITIVITY (%)

92

90

(Typ. Ta=25

G8605-13/-23

G8605-15/-25

02 6 1012 16

48 14

INCIDENT LIGHT LEVEL (mW)

, λ=1.3 µm, RL=2 Ω, VR=0 V)

G8605-11/-21

G8605-12/-22

KIRDB0241EA

■

Dark current vs. reverse voltage

Applying a reverse voltage increases
dark current, but improves frequency
characteristics and output linearity.

KIRDB0242EA

2

InGaAs PIN photodiode

G8605 series

■

Terminal capacitance vs. reverse voltage

˚C

10 nF

1 nF

G8605-12/-22

100 pF

10 pF

TERMINAL CAPACITANCE

G8605-11/-21

1 pF

0.01 0.1 1 10 100

(Typ. Ta=25

, f=1 MHz)

G8605-15/-25

G8605-13/-23

REVERSE VOLTAGE (V)

In applications requiring high-speed
response, the lead length should be as
short as possible to minimize the termi­nal capacitance.

■

Thermistor temperature characteristic

6

10

■

Shunt resistance vs. element temperature

R

=10 mV)

10 GΩ

1 GΩ

100 MΩ

10 MΩ

G8605-13/-23

SHUNT RESISTANCE

1 MΩ

100 kΩ

G8605-15/-25

-40 -20 0 40 60 80

(Typ. V

G8605-11/-21

G8605-12/-22

20

ELEMENT TEMPERATURE (˚C)

KIRDB0243EA KIRDB0244EA

■

Cooling characteristics of TE-cooler

(Typ.)

(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

40

5

10

4

10

RESISTANCE (Ω)

3

10

-40 -20 0 20

ELEMENT TEMPERATURE (˚C)

KIRDB0116EA KIRDB0231EA

■

Current vs. voltage characteristics of TE-cooler

(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

1.6

1.4

1.2

ONE-STAGE
TE-COOLED TYPE

1.0

0.8

0.6

CURRENT (A)

0.4

0.2

TWO-STAGE
TE-COOLED TYPE

20

ONE-STAGE
TE-COOLED TYPE

0

-20

TWO-STAGE
TE-COOLED TYPE

-40

ELEMENT TEMPERATURE (˚C)

-60
0 0.4 0.8 1.2 1.6

CURRENT (A)

0

0 0.5 1.0 1.5

VOLTAGE (V)

KIRDB0115EA

3

■

Dimensional outlines (unit: mm)

15.3 ± 0.2
14 ± 0.2

WINDOW
10 ± 0.2

6.4 ± 0.212 MIN.

4.4 ± 0.2

InGaAs PIN photodiode

➁ G8605-21/-22/-23/-25➀ G8605-11/-12/-13/-15

15.3 ± 0.2
14 ± 0.2

WINDOW
10 ± 0.2

G8605 series

10 ± 0.212 MIN.

6.7 ± 0.2

PHOTOSENSITIVE
SURFACE

0.45
LEAD

5.1 ± 0.2

5.1 ± 0.2

10.2 ± 0.2

DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR

KIRDA0152EA KIRDA0153EA

PHOTOSENSITIVE
SURFACE

0.45
LEAD

5.1 ± 0.2

5.1 ± 0.2

10.2 ± 0.2

DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

4

Cat. No. KIRD1049E01
Apr. 2001 DN