Datasheet G8421-05, G8421-03, G8371-03, G8371-01, G5851-21 Datasheet (HAMAMATSU)

PHOTODIODE

InGaAs PIN photodiode

G8421/G8371/G5851 series

Long wavelength type

Features

l

Long cut-off wavelength: 1.9 µm

l

3-pin TO-18 package: low price

l

Thermoelectrically cooled TO-18 package: low dark current

l

Active area: φ0.3 to φ3 mm

Specifications / Absolute maximum ratings

■

Dimensional

Type No.

G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
G5851-11
G5851-13
G5851-203
G5851-21
G5851-23

outline/
Window
material

➀

➁

➂

➃

Package Cooling

TO-18

Non-cooled

TO-5

TO-8

TO-8

One-stage
TE-cooled

Two-stage
TE-cooled

Applications

l

Optical power meter

l

Gas analyzer

l

NIR (near infrared) photometry

Absolute maximum ratings

Active

area

(mm) (mW) (A) (V) (°C) (°C)

f0.3
f0.5

f1
f3

f0.3

f1
f3

f0.3

f1
f3

Thermistor

power

dissipation

TE-cooler

allowable

current

Reverse

voltage

V

R

Operating

temperature

Topr

- - -40 to +85 -55 to +125

1.5

0.2

2

-40 to +70 -55 to +85

1.0

Storage

temperature

Tstg

Electrical and optical characteristics (Typ. unless otherwise noted)

■

Cut-off

frequency

Terminal

capacitance

fc

=1 V

V

R

R

=50 W

L

V

f=1 MHz

-3 dB

(MHz) (pF)

Ct

=1 V

R

Shunt

resistance

Rsh

4

=10 mV

V

(MW)

D

l=lp

(cm·Hz

*

NEP

l=lp

1/2

(W/Hz

/W)

Type No.

Measurement

Condition

Element

temperature

Spectral

response

range

l

Peak

sensitivity

wavelength

lp

(°C) (µm) (µm) (A/W)

Photo

sensitivity

S

l=lp

Dark current

I

D

VR=1 V

Typ.
(nA)

Max.

(nA)
G8421-03 30 300 100 8 1.5 9 × 10
G8421-05 50 500 80 20 1 1.5 × 10
G8371-01 100 1000 40 80 0.5 2 × 10
G8371-03
G5851-103 3 30 100 8 15 3 × 10
G5851-11 10 100 40 80 5 6 × 10
G5851-13

25 0.9 to 1.9

-10 0.9 to 1.87

2000 20000 3 800 0.05

1.75 1.1

200 2000 3 800 0.5

5 × 10

1.5 × 10

11

8 × 10

12

2 × 10
G5851-203 1.5 15 100 8 35 2 × 10
G5851-21 5 50 40 80 10 4 × 10
G5851-23

-20 0.9 to 1.85
100 1000 3 800 1

2.5 × 10

12

1.5 × 10

1/2

)

-14

-13

-13

-13

-14

-14

-13

-14

-14

-13

1

InGaAs PIN photodiode

10.8 1.6 2 2.2 2.6

WAVELENGTH (µm)

TEMPERATURE COEFFICIENT (%/˚C)

-1

(Typ.)

1.2 1.4 1.8 2.4

0

1

2

0.01 0.1 1 10

REVERSE VOLTAGE (V)

DARK CURRENT

100 pA

(Typ.)

1 nA

10 nA

100 nA

1 µA

G5851-13 (T= -10

˚C

)

G5851-23 (T= -20

˚C

)

G5851-11 (T= -10

˚C

)

G5851-103 (T= -10

˚C

)

G5851-203 (T= -20

˚C

)

G5851-21
(T= -20

˚C

)

G8421/G8371/G5851 series

■

Spectral response

1.4

1.2

1.0

0.8

0.6

0.4

PHOTO SENSITIVITY (A/W)

0.2

0

T= -10 ˚C

T= -20 ˚C

1.41.21.00.8

1.6 1.8 2.22.0

WAVELENGTH (µm)

■

Dark current vs. reverse voltage

Non-cooled type TE-cooled type

10 µA

T=25 ˚C

(Typ. Ta=25

(Typ.)

˚C

KIRDB0221EA

)

■

Photo sensitivity temperature characteristic

KIRDB0208EA

1 µA

G8371-01

100 nA

DARK CURRENT

10 nA

1 nA

0.01 0.1 1 10

G8421-05

REVERSE VOLTAGE (V)

■

Terminal capacitance vs. reverse voltage

10 nF

1 nF

100 pF

2

10 pF

TERMINAL CAPACITANCE

1 pF

0.1 1 10

G8421-05

REVERSE VOLTAGE (V)

G8421-03

(Typ. Ta=25 ˚C, f=1 MHz)

G8371-03
G5851-13/-23

G8371-01
G5851-11/-21

G8421-03
G5851-103/-203

G8371-03

KIRDB0232EB KIRDB0223EA

■

Shunt resistance vs. element temperature

R=10 mV)

10 MΩ

1 MΩ

100 kΩ

10 kΩ

G8371-01
G5851-11/-21

SHUNT RESISTANCE

1 kΩ

100 Ω

-40 -20 0 40 60

G8371-03
G5851-13/-23

20 80 90 100

(Typ. V

G8421-03
G5851-103/-203

G8421-05

ELEMENT TEMPERATURE (˚C)

KIRDB0233EA

KIRDB0234EA

InGaAs PIN photodiode

G8421/G8371/G5851 series

■

Thermistor temperature characteristic

6

10

5

10

4

10

RESISTANCE (Ω)

3

10

-40 -20 0 20

(Typ.)

ELEMENT TEMPERATURE (˚C)

KIRDB0116EA

■

Current vs. voltage characteristics of TE-cooler

(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

1.6

1.4

1.2

ONE-STAGE
TE-COOLED TYPE

1.0

■

Cooling characteristics of TE-cooler

(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

40

20

0

-20

TWO-STAGE
TE-COOLED TYPE

-40

ELEMENT TEMPERATURE (˚C)

-60
0 0.4 0.8 1.2 1.6

ONE-STAGE
TE-COOLED TYPE

CURRENT (A)

KIRDB0231EA

0.8

0.6

CURRENT (A)

0.4

0.2

0

0 0.5 1.0 1.5

TWO-STAGE
TE-COOLED TYPE

VOLTAGE (V)

KIRDB0115EA

3

InGaAs PIN photodiode

G8421/G8371/G5851 series

■ Dimensional outlines (unit: mm)

➀ G8421-03/-05, G8371-01 ➁ G8371-03

PHOTOSENSITIVE
SURFACE

0.45
LEAD

2.5 ± 0.2

5.4 ± 0.2

4.7 ± 0.1

WINDOW

3.0 ± 0.1

CASE

2.7 ± 0.2

3.6 ± 0.213 MIN.

9.2 ± 0.2

8.1 ± 0.1

WINDOW

5.9 ± 0.1

0.15 MAX.

PHOTOSENSITIVE
SURFACE

0.45
LEAD

5.1 ± 0.3

1.5 MAX.

CASE

KIRDA0150EA KIRDA0151EA

2.5 ± 0.2

4.2 ± 0.2

18 MIN.

0.4 MAX.

➂ G5851-103/-11/-13 ➃ G5851-203/-21/-23

0.45
LEAD

5.1 ± 0.2

5.1 ± 0.2

15.3 ± 0.2

14 ± 0.2

WINDOW
10 ± 0.2

10.2 ± 0.2

6.7 ± 0.2

10 ± 0.212 MIN.

DETECTOR (ANODE)
DETECTOR (CATHODE)

TE-COOLER (-)
TE-COOLER (+)
THERMISTOR

15.3 ± 0.2

14 ± 0.2

WINDOW

10 ± 0.2

4.4 ± 0.2

6.4 ± 0.212 MIN.

PHOTOSENSITIVE
SURFACE

0.45
LEAD

10.2 ± 0.2

5.1 ± 0.2

5.1 ± 0.2

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

DETECTOR (ANODE)
DETECTOR (CATHODE)

TE-COOLER (-)
TE-COOLER (+)
THERMISTOR

KIRDA0029EB

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.

PHOTOSENSITIVE
SURFACE

4

KIRDA0031EB

Cat. No. KIRD1046E02

Jan.2003 DN