Datasheet G2119, G1127-02, G1126-02 Datasheet (HAMAMATSU)

PHOTODIODE

GaAsP photodiode

G1126-02, G1127-02, G2119

Schottky type for UV to visible range

Features

l

Low dark current

l

High UV sensitivity

General ratings / Absolute maximum ratings

■

Dimensional

Type No.

G1126-02 ➀/Q * TO-5 2.3 × 2.3 5.2
G1127-02 ➁/Q TO-8 4.6 × 4.6 21
G2119 ➂/Q Ceramic 10.1 × 10.1 98

outline/
Window
material

Package

Active area

size

(mm) (mm

Applications

l

Analytical instruments

l

Color identification

l

UV detection

Effective

active

area

Absolute maximum ratings

Reverse

voltage

Max.

V

2

) (V) (°C) (°C)

R

5 -10 to +60 -20 to +70

Operating

temperature

Topr

Storage

temperature

Tstg

Electrical and optical characteristics (Typ. Ta=25

■

Spectral

response

Type No.

G1126-02 0.25 0.3 5 50 3.5 1800 2 15 5.8 × 10
G1127-02 0.9 1.2 10 100 12 7000 1 8 8.0 × 10
G2119

* Window material Q: quartz glass

190 to 680

Peak

sensitivity

wave-

range

length

λ

λ

(nm) (nm)

610 0.18 0.035 0.17 0.17

Photo sensitivity

p

p

λ

(A/W)

Hg

line

254 nm

S

GaP
LED

560 nm

°C, unless otherwise noted

Short circuit

current

Isc

100

He-Ne

laser

633 nm

lx

Min.

Typ.

V

(µA)

(µA)

5 6 100 5000

current

4

=10 mV

(pA)

Dark

I

D

Max.

VR=1 V

(pA)

)

Temp.

coefficient

of

I

D

T

CID

(times/° C)

1.07

Rise time

V

R

R

L

Terminal

capacitance

tr

=0 V

=1 k

(µs) (pF)

55 25000 0.1 0.7 2.4 × 10

VR=0 V

Ω

f=10 kHz

Ct

Shunt

resistance

Rsh

=10 mV

V

R

Min.

Typ.

(GΩ)

(GΩ)

NEP

(W/Hz

1/2

)

-15

-15

-14

GaAsP photodiode

G1126-02, G1127-02, G2119

■■

■

■■

Spectral response

0.3

0.25

0.2

0.15

0.1

PHOTO SENSITIVITY (A/W)

0.05

0

190 400 600

WAVELENGTH (nm)

■■

■

■■

Rise time vs. load resistance

(Typ. Ta=25 ˚C)

800

KGPDB0034EA

■■

■

■■

Photo sensitivity temperature characteristic

+1.5

+1.0

+0.5

0

TEMPERATURE COEFFICIENT (%/˚C)

-0.5
190 400 600

WAVELENGTH (nm)

■■

■

■■

Dark current vs. reverse voltage

(Typ.)

800

KGPDB0035EA

10

ms

1

ms

100

µs

10

µs

RISE TIME

1

µs

100

ns

2

10

(Typ. Ta=25 ˚C, VR=0 V)

G2119

G1127-02

G1126-02

10

3

10

4

LOAD RESISTANCE (Ω)

10

1 nA

100 pA

10 pA

G2119

G1127-02

DARK CURRENT

1 pA

100

5

10

6

fA

0.01 0.10.001

(Typ. Ta=25 ˚C)

G1126-02

110

REVERSE VOLTAGE (V)

KGPDB0036EA

KGPDB0037EA

GaAsP photodiode

G1126-02, G1127-02, G2119

■■

■

■■

Shunt resistance vs. ambient temperature

10 TΩ

1 TΩ

100 GΩ

10 GΩ

1 GΩ

SHUNT RESISTANCE

100 MΩ

10 MΩ

G2119

020-20

G1126-02

(Typ. VR=10 mV)

G1127-02

40 60 80

AMBIENT TEMPERATURE (˚C)

■■

■

■■

Dimensional outlines (unit: mm)

KGPDB0038EA

■■

■

■■

Short circuit current linearity

(Typ. Ta=25 ˚C, A light source fully illuminated)

0

10

-2

10

-4

10

-6

10

-8

10

-10

10

-12

10

OUTPUT CURRENT (A)

-14

10

DEPENDENT ON NEP

-1410-1210-1010-810-610-410-2

10

10

-16

-16

10

INCIDENT LIGHT LEVEL (lx)

RL=100 Ω

0

10

KGPDB0008EA

➀ G1126-02

PHOTOSENSITIVE
SURFACE

WINDOW

5.9 ± 0.1

0.45
LEAD

CONNECTED
TO CASE

9.1 ± 0.2

8.1 ± 0.1

5.08 ± 0.2

2.9

4.1 ± 0.2

20

KGPDA0006EA

➁ G1127-02

PHOTOSENSITIVE
SURFACE

WINDOW

10.5 ± 0.1

0.45
LEAD

CONNECTED
TO CASE

13.9 ± 0.2

12.35 ± 0.1

7.5 ± 0.2

5.0 ± 0.2

1.9
15

MARK ( 1.4)

KGPDA0007EA

➂ G2119

PHOTOSENSITIVE
SURFACE

ACTIVE AREA

0.9

0.3

16.5 ± 0.2

GaAsP photodiode

15.0 ± 0.15

2.15 ± 0.1

0.1

G1126-02, G1127-02, G2119

0.5
LEAD

ANODE
TERMINAL MARK

10.5

15.1 ± 0.3

12.5 ± 0.2

13.7 ± 0.3

KGPDA0011EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Cour t, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

Cat. No. KGPD1005E01
Apr. 2001 DN