Datasheet G3297, G1740, G1738, G1737, G1736 Datasheet (HAMAMATSU)

PHOTODIODE

GaAsP photodiode

Diffusion type

Red sensitivity extended type

Features

l

Low dark current

l

High stability

l

Red sensitivity extended type

■

General ratings / Absolute maximum ratings

Dimensional

Type No.

G1735
G1736
G1737
G1738
G1740
G3297

outline/

Window

material *

/K TO-18 1.3 × 1.3 1.66

➀

/K TO-5 2.7 × 2.7 7.26

➁

/K TO-8 5.6 × 5.6 29.3

➂

/R Ceramic 1.3 × 1.3 1.66

➃

/R Ceramic 5.6 × 5.6 29.3

➄

/L TO-18 1.3 × 1.3 1.66

➅

Package

Active area

size

(mm) (mm

Applications

l

Analytical instruments

l

Color identification

Effective

active

area

2

) (V) (°C) (°C)

Reverse

V

Absolute maximum ratings

Operating

voltage

R

Max.

5 -30 to +80 -40 to +85

temperature

Topr

Storage

temperature

Tstg

■

Electrical and optical characteristics (Typ. Ta=25

Spectral

response

Type No.

G1735 0.2 0.25 2 20 0.5 250 5 25 2.0 × 10
G1736 0.8 1.1 5 50 1.8 1200 2 15 3.2 × 10
G1737 4 5 10 100 10 4500 1 5 4.5 × 10
G1738 0.2 0.25 2 20 0.5 250 5 25 2.0 × 10
G1740 4 5 10 100 10 4500 1 5 4.5 × 10
G3297

* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating

range

λ

(nm) (nm)

400 to 760

Peak

sensitiv ity

wavelength

λ

710 0.4 0.22 0.29

Photo sensitivity

p

p

λ

S

(A/W)

GaP
LED

560 nm

He-Ne

633 nm

°C

, unless otherwise noted)

Short circuit

current

Isc

100

laser

Min.

Typ.

(µA)

(µA)

1.5 1.8 2 20

Temp.

of

D

I

CID

T

1.07

Rise time

R

V

L

R

Dark

current

I

4

V

(pA)

Max.

=10 mV

lx

D

V4=1 V

(pA)

coefficient

(times/°C)

Terminal

capacitance

tr

=0 V

=1 k

(µs) (pF)

0.5 250 5 25 2.0 × 10

VR=0 V

Ω

f=10 kHz

Ct

Shunt

resistance

Rsh

R

=10 mV

V

Min.

Typ.

(GΩ)

(GΩ)

NEP

(W/Hz

1/2

)

-15

-15

-15

-15

-15

-15

GaAsP photodiode

Diffusion type

■■

■

■■

Spectral response

0.5

0.4

0.3

0.2

0.1

PHOTO SENSITIVITY (A/W)

0

200 400 600

WAVELENGTH (nm)

■■

■

■■

Rise time vs. load resistance

10

ms

2

G1737, G1740

G1736

3

10

10

1

ms

100

µs

10

µs

RISE TIME

1

µs

100

ns

10

LOAD RESISTANCE (Ω)

(Typ. Ta=25 ˚C)

(Typ. Ta=25 ˚C, VR=0 V)

G1735, G1738
G3297

4

5

10

800

KGPDB0024EA

6

10

KGPDB0026EA

■■

■

■■

Photo sensitivity temperature characteristic

+1.5

+1.0

+0.5

0

(Typ.)

TEMPERATURE COEFFICIENT (%/˚C)

-0.5
400200

600 800

WAVELENGTH (nm)

■■

■

■■

Dark current vs. reverse voltage

1 nA

100 pA

10 pA

G1737, G1740

G1736

(Typ. Ta=25 ˚C)

DARK CURRENT

1 pA

G1735, G1738, G3297

100

fA

0.01 0.10.001

110

REVERSE VOLTAGE (V)

KGPDB0025EA

KGPDB0027EA

■■

■

■■

Shunt resistance vs. ambient temperature

10 TΩ

1 TΩ

100 GΩ

10 GΩ

1 GΩ

G1735, G1738, G3297

G1736

G1737, G1740

(Typ. VR=10 mV)

SHUNT RESISTANCE

100 MΩ

10 MΩ

020-20

40 60 80

AMBIENT TEMPERATURE (˚C)

KGPDB0028EA

■■

■

■■

Short circuit current linearity

(Typ. Ta=25 ˚C, A light source fully illuminated)

0

10

-2

10

-4

10

-6

10

-8

10

-10

10

-12

10

OUTPUT CURRENT (A)

-14

10

-16

10

-16

10

DEPENDENT ON NEP

-1410-1210-1010-810-610-410-2

10

INCIDENT LIGHT LEVEL (lx)

RL=100 Ω

0

10

KGPDB0008EA

■■

■

■■

Dimensional outlines (unit: mm)

GaAsP photodiode

Diffusion type

➀ G1735

WINDOW

3.0 ± 0.2

PHOTOSENSITIVE
SURFACE

0.45
LEAD

CONNECTED
TO CASE

5.4 ± 0.2

4.7 ± 0.1

3.55 ± 0.2

2.4

14

2.54 ± 0.2

Borosilicate glass window may extend a
maximum of 0.1 mm beyond the upper
surface of the cap.

KGPDA0012EA

➁ G1736

WINDOW

5.9 ± 0.1

PHOTOSENSITIVE
SURFACE

0.45
LEAD

CONNECTED
TO CASE

9.1 ± 0.2

8.1 ± 0.1

5.08 ± 0.2

4.1 ± 0.2

2.9

20

Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.

KGPDA0013EA

➂ G1737

WINDOW

10.5 ± 0.1

PHOTOSENSITIVE
SURFACE

0.45
LEAD

CONNECTED
TO CASE

13.9 ± 0.2

12.35 ± 0.1

7.5 ± 0.2

5.0 ± 0.2

1.9
15

MARK ( 1.4)

Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.

➃ G1738

PHOTOSENSITIVE
SURFACE

CATHODE
TERMINAL MARK

ACTIVE AREA

0.6

0.45
LEAD

6.0 ± 0.2

5.0 ± 0.2

1.5 ± 0.2

14

3.0 ± 0.2

KGPDA0014EA

KGPDA0002EA

GaAsP photodiode

Diffusion type

➄ G1740

ACTIVE AREA

PHOTOSENSITIVE
SURFACE

0.3

0.5
LEAD

ANODE
TERMINAL MARK

0.7

10.1 ± 0.1

9.2 ± 0.3

7.4 ± 0.2

8.9 ± 0.1

2.0 ± 0.1

10.5

8.0 ± 0.3

Coating resin may extend a maximum
of 0.1 mm beyond the upper surface
of the package.

KGPDA0010EA

➅ G3297

PHOTOSENSITIVE
SURFACE

2.4

0.45
LEAD

CONNECTED
TO CASE

5.4 ± 0.2

4.65 ± 0.1

2.15 ± 0.3

4.5 ± 0.2

14

2.54 ± 0.2

KGPDA0009EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Cat. No. KGPD1003E01
Apr. 2001 DN