Datasheet FX50SMJ-2 Datasheet (POWEREX)

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX50SMJ-2

HIGH-SPEED SWITCHING USE

FX50SMJ-2

4V DRIVE

•

VDSS .............................................................–100V

•

rDS (ON) (MAX) ................................................ 50mΩ

•

ID ....................................................................–50A

•

Integrated Fast Recovery Diode (TYP.) .........100ns

•

OUTLINE DRAWING Dimensions in mm

4.5

1.5

4.4

2

15.9 max

φ 3.2

4

5.0

20.0

2

4

G

1

1.0

5.45

2

1

4

3

2

4

3

TO-3P

19.5 min

1

GATE

2

DRAIN

3

SOURCE

4

DRAIN

0.6 2.85.45

APPLICATION

Motor control, Lamp control, Solenoid control
DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg

—

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight

Parameter Conditions Ratings Unit

VGS = 0V
VDS = 0V

L = 30µH

Typical value

–100

±20
–50

–200

–50
–50

–200

150
–55 ~ +150
–55 ~ +150

4.8

V
V
A
A
A
A
A

W
°C
°C

g

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time

ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –25A, VGS = –4V
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V

VDS = –10V, VGS = 0V, f = 1MHz

VDD = –50V, ID = –25A, VGS = –10V, R

IS = –25A, VGS = 0V
Channel to case
IS = –50A, dis/dt = 100A/µs

GEN

= RGS = 50Ω

MITSUBISHI Pch POWER MOSFET

FX50SMJ-2

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

–100

—
—

–1.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—

—
—
—

–1.5

39
47

–0.98

49.2

11130

896
480

57
118
828
380

–1.0

—

100

—
±0.1
–0.1
–2.0

50

61

–1.25

—

—

—

—

—

—

—

—
–1.5

0.83

—

V

µA

mA

V
mΩ
mΩ

V

S

pF
pF
pF

ns
ns
ns
ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

250

200

150

100

50

POWER DISSIPATION PD (W)

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

–100

–80

–60

VGS =
–10V

(TYPICAL)

–8V
–6V

Tc = 25°C
Pulse Test

–5V

C (°C)

–4V

MAXIMUM SAFE OPERATING AREA

–3
–2

2

–10

–7
–5

–3
–2

1

–10

–7

TC = 25°C

–5

Single Pulse

–3
–2

DRAIN CURRENT ID (A)

0

–10

–7
–5

–3

–3 –5–7 –2 –2–10

100µs

10ms

0

–2 –10

–3 –5–7–2 –10

1ms

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

–50

–40

–30

VGS =
–10V

–8V
–6V

–5V

–4V

1

tw =
10µs

DC

–3 –5–7

DS (V)

PD = 150W

2

–40

–20

DRAIN CURRENT ID (A)

0

0 –2–4–6–8–10

PD = 150W

DRAIN-SOURCE VOLTAGE VDS (V)

–3V

–20

–10

DRAIN CURRENT ID (A)

0

0 –1.0 –2.0 –3.0 –4.0 –5.0

DRAIN-SOURCE VOLTAGE VDS (V)

–3V

Tc = 25°C
Pulse Test

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX50SMJ-2

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

–10

–8

(V)

–6

DS (ON)

–4

VOLTAGE V

–2

DRAIN-SOURCE ON-STATE

0

0 –2–4–6–8–10

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

–100

–80

(A)

D

–60

–40

–20

DRAIN CURRENT I

Tc = 25°C
Pulse Test

ID = –100A

–50A
–25A

GS

Tc = 25°C

DS

= –10V

V
Pulse Test

(V)

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

100

80

(mΩ)

60

DS (ON)

40

20

DRAIN-SOURCE ON-STATE

RESISTANCE r

0

0

–10

–2

–3 –5 –7 –2

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

2

10

TC =

7

25°C

5

(S)

3



fs

2

1

10

7
5

3

ADMITTANCE y

FORWARD TRANSFER

2

75°C 125°C

–10

1

VGS = –4V

–10V

Tc = 25°C
Pulse Test

–3 –5 –7

D

(A)

VDS = –10V
Pulse Test

–10

2

0

0 –2–4–6–8–10

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

2

4

10

7
5

3
2

3

10

CAPACITANCE

7

Ciss, Coss, Crss (pF)

5
3

2

–10

–3 –5–7

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

Ciss

Coss

0

1

–3–2 –5–7

–10

–3–2 –5–7 –3–2

GS

(V)

Tch = 25°C

GS

= 0V

V

Z

f = 1MH

Crss

2

–10

DS

(V)

0

10

0

–10

–2 –3 –5 –7

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

2

3

10

7
5

3

Tch = 25°C

2

GS

= –10V

V

DD

= –50V

V

2

GEN

= RGS = 50Ω

R

10

7

SWITCHING TIME (ns)

5
3

2

0

–2 –3 –5 –7 –2 –3 –5 –7

–10

–7

DRAIN CURRENT ID (A)

–10

1

–10

–2 –3 –5 –7

D

(A)

t

d(off)

t

f

t

r

t

d(on)

1

–10

2

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX50SMJ-2

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

–10

(V)

GS

–8

VDS =

Tch = 25°C

D

= –50A

I

g

(nC)

–20V
–40V

–80V

–6

–4

–2

GATE-SOURCE VOLTAGE V

0

0 40 80 120 160 200

GATE CHARGE Q

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

1

10

7

DS (ON)

DS (ON)

5
3

2

0

10

7
5

3
2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

(TYPICAL)

VGS = –10V

D

= 1/2I

D

I
Pulse Test

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

–100

–80

(A)

S

–60

–40

–20

SOURCE CURRENT I

0

0 –0.4 –0.8 –1.2 –1.6 –2.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

–4.0

–3.2

(V)

–2.4

GS (th)

–1.6

VOLTAGE V

–0.8

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

TC =
25°C

75°C

125°C

VGS = 0V
Pulse Test

SD

VDS = –10V

D

= –1mA

I

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

CHANNEL TEMPERATURE

(TYPICAL)

1.4

(BR) DSS

(BR) DSS

1.2

1.0

0.8

VGS = 0V
I

D

= –1mA

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

(ch–c)

5

th

3
2

D = 1.0

0

10

7

0.5

5
3

0.2

2

–1

10

7
5

3
2

–2

10

–4

23 57 23 57 23 57 23 57

10

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

0.1

0.05

0.02

0.01
Single Pulse

–3

10

–2

PULSE WIDTH t

10

–1

P

DM

tw

T

tw

D

=

T

0

10

w

(s)

23 57

10

1

23 57

10

2

Jan.1999