Datasheet FX50KMJ-2 Datasheet (POWEREX)

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX50KMJ-2

HIGH-SPEED SWITCHING USE

FX50KMJ-2

4V DRIVE

•

VDSS .............................................................–100V

•

rDS (ON) (MAX) ................................................ 50mΩ

•

ID ....................................................................–50A

•

Integrated Fast Recovery Diode (TYP.) .........100ns

•

Viso ................................................................................ 2000V

•

OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

3 ± 0.33.6 ± 0.3

15 ± 0.314 ± 0.5

1

2

3

1

3

2

6.5 ± 0.3

φ 3.2 ± 0.2

1.1 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.252.54 ± 0.25

2.6 ± 0.2

1
2
3

E

0.75 ± 0.15

4.5 ± 0.2

GATE
DRAIN
SOURCE

TO-220FN

APPLICATION

Motor control, Lamp control, Solenoid control
DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso

—

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight

Parameter Conditions Ratings Unit

VGS = 0V
VDS = 0V

L = 30µH

AC for 1minute, Terminal to case
Typical value

–100

±20
–50

–200

–50
–50

–200

35
–55 ~ +150
–55 ~ +150

2000

2.0

V
V
A
A
A
A
A

W
°C
°C

V
g

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time

ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –25A, VGS = –4V
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V

VDS = –10V, VGS = 0V, f = 1MHz

VDD = –50V, ID = –25A, VGS = –10V , RGEN = RGS = 50Ω

IS = –25A, VGS = 0V
Channel to case
IS = –50A, dis/dt = 100A/µs

MITSUBISHI Pch POWER MOSFET

FX50KMJ-2

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

–100

—
—

–1.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—

—
—
—

–1.5

39
47

–0.98

49.2

11130

896
480

57
118
828
380

–1.0

—
100

—
±0.1
–0.1
–2.0

50

61

–1.25

—

—

—

—

—

—

—

—
–1.5

3.57

—

V

µA

mA

V
mΩ
mΩ

V

S

pF
pF
pF

ns
ns
ns
ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

50

40

30

20

10

POWER DISSIPATION PD (W)

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

–100

–80

–60

–40

–20

DRAIN CURRENT ID (A)

0

0 –2–4–6–8–10

VGS =
–10V

(TYPICAL)

–8V
–6V

Tc = 25°C
Pulse Test

–5V

PD = 35W

C (°C)

–4V

–3V

MAXIMUM SAFE OPERATING AREA

–3
–2

2

–10

–7
–5

–3
–2

1

–10

–7

TC = 25°C

–5

Single Pulse

DRAIN CURRENT ID (A)

–3
–2

0

–10

–7
–5

–3

–3 –5–7 –2 –2–10

100µs

1ms

10ms

100ms

0

–2 –10

–3 –5–7–2 –10

1

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

–50

–40

–30

VGS =
–10V

–4V

–8V
–6V
–5V

–20

–10

DRAIN CURRENT ID (A)

0

0 –1.0 –2.0 –3.0 –4.0 –5.0

tw =
10µs

DC

–3 –5–7

DS (V)

Tc = 25°C
Pulse Test

PD = 35W

2

–3V

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN-SOURCE VOLTAGE VDS (V)

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX50KMJ-2

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

–10

–8

(V)

–6

DS (ON)

–4

VOLTAGE V

–2

DRAIN-SOURCE ON-STATE

0

0 –2–4–6–8–10

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

–100

–80

(A)

D

–60

–40

–20

DRAIN CURRENT I

Tc = 25°C
Pulse Test

ID = –100A

–50A
–25A

GS

Tc = 25°C

DS

= –10V

V
Pulse Test

(V)

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

100

80

(mΩ)

60

DS (ON)

40

20

DRAIN-SOURCE ON-STATE

RESISTANCE r

0

0

–10

–2

–3 –5 –7 –2

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

2

10

TC =

7

25°C

5

(S)

3



fs

2

1

10

7
5

3

ADMITTANCE y

FORWARD TRANSFER

2

75°C 125°C

–10

1

VGS = –4V

–10V

Tc = 25°C
Pulse Test

–3 –5 –7

D

(A)

VDS = –10V
Pulse Test

–10

2

0

0 –2–4–6–8–10

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

2

4

10

7
5

3
2

3

10

CAPACITANCE

7

Ciss, Coss, Crss (pF)

5
3

2

–10

–3 –5–7

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

Ciss

Coss

0

1

–3–2 –5–7

–10

–3–2 –5–7 –3–2

GS

(V)

Tch = 25°C

GS

= 0V

V

Z

f = 1MH

Crss

2

–10

DS

(V)

0

10

0

–10

–2 –3 –5 –7

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

2

3

10

7
5

3

Tch = 25°C

2

GS

= –10V

V

DD

= –50V

V

2

GEN

= RGS = 50Ω

R

10

7

SWITCHING TIME (ns)

5
3

2

0

–2 –3 –5 –7 –2 –3 –5 –7

–10

–7

DRAIN CURRENT ID (A)

–10

1

–10

–2 –3 –5 –7

D

(A)

t

d(off)

t

f

t

r

t

d(on)

1

–10

2

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX50KMJ-2

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

–10

(V)

GS

–8

VDS =

Tch = 25°C

D

= –50A

I

g

(nC)

–20V
–40V

–80V

–6

–4

–2

GATE-SOURCE VOLTAGE V

0

0 40 80 120 160 200

GATE CHARGE Q

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

1

10

7

DS (ON)

DS (ON)

5
3

2

0

10

7
5

3
2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

(TYPICAL)

VGS = –10V

D

= 1/2I

D

I
Pulse Test

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

–100

–80

(A)

S

–60

–40

–20

SOURCE CURRENT I

0

0 –0.4 –0.8 –1.2 –1.6 –2.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

–4.0

–3.2

(V)

–2.4

GS (th)

–1.6

VOLTAGE V

–0.8

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

TC =
25°C

75°C

125°C

VGS = 0V
Pulse Test

SD

VDS = –10V

D

= –1mA

I

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

CHANNEL TEMPERATURE

(TYPICAL)

1.4

(BR) DSS

(BR) DSS

1.2

1.0

0.8

VGS = 0V
I

D

= –1mA

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

(ch–c)

5

th

D = 1.0

3

0.5

2

0

10

10

10

0.2

7

0.1

5

0.05

3
2

–1

7
5

3
2

–2

–4

23 57 23 57 23 57 23 57

10

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

0.02

0.01
Single Pulse

–3

10

–2

PULSE WIDTH t

10

–1

P

DM

tw

T

tw

D

=

T

0

10

w

(s)

23 57

10

1

23 57

10

2

Jan.1999