Datasheet FX20KMJ-2 Datasheet (POWEREX)

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX20KMJ-2

HIGH-SPEED SWITCHING USE

FX20KMJ-2

4V DRIVE

•

VDSS .............................................................–100V

•

rDS (ON) (MAX) ................................................ 0.26Ω

•

ID ....................................................................–20A

•

Integrated Fast Recovery Diode (TYP.) .........100ns

•

Viso ................................................................................ 2000V

•

OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

3 ± 0.33.6 ± 0.3

15 ± 0.314 ± 0.5

1

2

3

1

3

2

6.5 ± 0.3

φ 3.2 ± 0.2

1.1 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.252.54 ± 0.25

2.6 ± 0.2

1
2
3

E

0.75 ± 0.15

4.5 ± 0.2

GATE
DRAIN
SOURCE

TO-220FN

APPLICATION

Motor control, Lamp control, Solenoid control
DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso

—

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight

Parameter Conditions Ratings Unit

VGS = 0V
VDS = 0V

L = 50µH

AC for 1minute, Terminal to case
Typical value

–100

±20
–20
–80
–20
–20
–80

25
–55 ~ +150
–55 ~ +150

2000

2.0

V
V
A
A
A
A
A

W
°C
°C

V
g

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time

ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –10A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –10V

VDS = –10V, VGS = 0V, f = 1MHz

VDD = –50V, ID = –10A, VGS = –10V , RGEN = RGS = 50Ω

IS = –10A, VGS = 0V
Channel to case
IS = –20A, dis/dt = 100A/µs

MITSUBISHI Pch POWER MOSFET

FX20KMJ-2

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

–100

—
—

–1.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—

—
—
—

–1.5

0.20

0.25
–2.0

10.3

2360

198

99
13
30

139

74

–1.0

—

100

—
±0.1
–0.1
–2.0

0.26

0.32
–2.6

—

—

—

—

—

—

—

—
–1.5

5.00

—

V

µA

mA

V

Ω
Ω

V

S
pF
pF
pF

ns
ns
ns
ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

50

40

30

20

10

POWER DISSIPATION PD (W)

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

–

50

VGS =
–10V

–

40

–

30

(TYPICAL)

–8V

–6V

C (°C)

Tc = 25°C
Pulse Test

–5V

MAXIMUM SAFE OPERATING AREA

–2

2

–10

–7
–5

–3
–2

1

–10

–7
–5

–3
–2

0

–10

DRAIN CURRENT ID (A)

–7
–5

–3
–2

–2 –3 –5–7 –2

10ms

TC = 25°C
Single Pulse

0

–2

–10

100µs

–10

1

–3 –5–7 –2

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

–20

VGS =

–10V

–16

–6V

–12

–5V

tw =
10µs

1ms

DC

–3 –5–7

–10

DS (V)

Tc = 25°C
Pulse Test

2

–4V

–

20

–10

DRAIN CURRENT ID (A)

0

–

0

10–20–30–40–50

DRAIN-SOURCE VOLTAGE VDS (V)

–4V

–3V

PD = 25W

–8

–4

DRAIN CURRENT ID (A)

0

0 –4 –8 –12 –16 –20

DRAIN-SOURCE VOLTAGE VDS (V)

–3V

PD = 25W

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX20KMJ-2

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

–50

–40

(V)

–30

DS (ON)

–20

VOLTAGE V

–10

DRAIN-SOURCE ON-STATE

0

–10A

0 –2–4–6–8–10

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

–50

–40

(A)

D

–30

–20

–10

DRAIN CURRENT I

0

0 –2–4–6–8–10

Tc = 25°C
Pulse Test

ID =

–40A

–20A

GS

(V)

Tc = 25°C

DS

= –10V

V
Pulse Test

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

0.5

0.4

(Ω)

0.3

DS (ON)

0.2

0.1

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–10

–1

–2

–3 –5–7 –2

–10

0

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

2

1

10

7

(S)



5

fs

4
3

TC = 25°C

2

0

10

7

ADMITTANCE y

FORWARD TRANSFER

5
4

3
2

0

–10

–7

75°C

VDS = –10V
Pulse Test

–2 –3 –4–5 –7 –2 –3 –4–5 –7

Tc = 25°C
Pulse Test

1

–10

–3 –5–7 –2

D

(A)

125°C

1

–10

VGS =

–4V

–10V

–3 –5–7

–10

2

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

3
2

3

10

7
5

4
3

2

CAPACITANCE

2

10

Ciss, Coss, Crss (pF)

7
5

4
3

–10

–3 –5–7 –2

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

0

–3 –5–7 –2

–10

1

GS

(V)

Ciss

Tch = 25°C

Z

f = 1MH
VGS = 0V

Coss

Crss

2

–10

–3 –5–7 –2 –3

DS

(V)

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

3
2

2

10

7
5

4
3

2

1

10

SWITCHING TIME (ns)

7
5

4
3

0

–10

–5 –7 –2 –3 –4–5 –7

DRAIN CURRENT ID (A)

D

(A)

t

d(off)

t

f

t

r

t

d(on)

Tch = 25°C

GS

= –10V

V

DD

= –50V

V

GEN

= RGS = 50Ω

R

1

–10

–2 –3 –4–5

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX20KMJ-2

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

–10

Tch = 25°C

(V)

GS

–8

–6

D

= –20A

I

VDS =

–20V

–50V

–80V

–4

–2

GATE-SOURCE VOLTAGE V

0

0 1020304050

GATE CHARGE Q

g

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

1

10

VGS = –10V

7

DS (ON)

DS (ON)

D

= 1/2I

I

5

Pulse Test

4
3

2

0

10

7
5

4
3

2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

(TYPICAL)

D

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

–50

VGS = 0V
Pulse Test

–40

(A)

S

–30

–20

–10

SOURCE CURRENT I

0

0 –0.4 –0.8 –1.2 –1.6 –2.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

–4.0

VDS = –10V

D

= –1mA

I

–3.2

(V)

–2.4

GS (th)

–1.6

VOLTAGE V

–0.8

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

125°C

75°C

SD

TC =

25°C

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

(BR) DSS

(BR) DSS

1.4

CHANNEL TEMPERATURE

(TYPICAL)

VGS = 0V

D

= –1mA

I

1.2

1.0

0.8

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

D = 1.0

(ch–c)

5

th

10

10

0.5

3
2

0.2

0

10

7
5

3
2

–1

7
5

3
2

–2

–4

23 57 23 57 23 57 23 57

10

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

0.1

0.05

0.02

0.01

Single Pulse

–3

10

–2

PULSE WIDTH t

10

–1

P

DM

tw

T

tw

D

=

T

0

10

w

(s)

23 57

10

1

23 57

10

2

Jan.1999