Datasheet FX20ASJ-03 Datasheet (POWEREX)

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX20ASJ-03

HIGH-SPEED SWITCHING USE

FX20ASJ-03

4V DRIVE

•

VDSS................................................................................–30V

•

rDS (ON) (MAX) ..............................................................0.13Ω

•

ID .......................................................................................–20A

•

Integrated Fast Recovery Diode (TYP.) ...........50ns

•

OUTLINE DRAWING Dimensions in mm

0.9 max

2.3

1

4

2.3

1

6.5

5.0 ± 0.2

1.0 max

2

3

2

1.0

2.3

10 max

5.5 ± 0.2

2.3 min 1.5 ± 0.2

3

1

GATE

2

DRAIN

3

SOURCE

4

DRAIN

4

0.5 ± 0.1

A

0.5 ± 0.2

0.8

MP-3

APPLICATION

Motor control, Lamp control, Solenoid control
DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg

—

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight

Parameter Conditions Ratings Unit

VGS = 0V
VDS = 0V

L = 10µH

Typical value

–30
±20
–20
–80
–20
–20
–80

30
–55 ~ +150
–55 ~ +150

0.26

V
V
A
A
A
A
A

W
°C
°C

g

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time

ID = –1mA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –2A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –5V

VDS = –10V, VGS = 0V, f = 1MHz

VDD = –15V, ID = –10A, VGS = –10V, R

IS = –10A, VGS = 0V
Channel to case
IS = –10A, dis/dt = 50A/µs

GEN

= RGS = 50Ω

MITSUBISHI Pch POWER MOSFET

FX20ASJ-03

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

–30

—
—

–1.3

—
—
—
—
—
—
—
—
—
—
—
—
—
—

—
—
—

–1.8

0.11

0.21
–1.1

5.8

1130

232

83
15
33
49
26

–1.0

—
50

—
±0.1
–0.1
–2.3

0.13

0.29
–1.3

—

—

—

—

—

—

—

—
–1.5

4.17

—

V

µA

mA

V

Ω
Ω

V

S
pF
pF
pF

ns
ns
ns
ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

40

32

24

16

8

POWER DISSIPATION PD (W)

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

–20

Tc = 25°C
Pulse Test

VGS =

–16

–10V
–8V

–7V

–12

–8

–4

DRAIN CURRENT ID (A)

0

0 –1.0 –2.0 –3.0 –4.0 –5.0

(TYPICAL)

C (°C)

–6V

–5V

PD = 30W

–4V

–3V

MAXIMUM SAFE OPERATING AREA

–2

2

–10

–7
–5

–3
–2

1

–10

–7
–5

DRAIN CURRENT ID (A)

–10

–3
–2

0

–7
–5

–3
–2

TC = 25°C
Single Pulse

–2 –10

–3 –5 –7 –2 –10

0

–3 –5 –7 –2

1

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

–10

VGS = –10V

–8V

–8

–6

–4

–2

DRAIN CURRENT ID (A)

0

0 –0.4 –0.8 –1.2 –1.6 –2.0

Tc = 25°C
Pulse Test

tw =
10µs

100µs

1ms
10ms

DC

–3 –5 –7

–6V

–10

DS (V)

–5V

–4V

–3V

2

–2

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN-SOURCE VOLTAGE VDS (V)

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX20ASJ-03

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

–5.0

Tc = 25°C
Pulse Test

–4.0

(V)

–3.0

DS (ON)

–2.0

VOLTAGE V

–1.0

DRAIN-SOURCE ON-STATE

0

0 –2–4–6–8–10

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

–20

–16

(A)

D

–12

–8

–4

DRAIN CURRENT I

ID =
–20A

–10A
–5A

GS

(V)

Tc = 25°C

DS

= –10V

V
Pulse Test

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

0.40

VGS = –4V

0.32

(Ω)

0.24

DS (ON)

0.16

0.08

RESISTANCE r

DRAIN-SOURCE ON-STATE

0
–10

–1

–2

–3 –5 –7 –2

–10

0

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

1

10

7
5

4

(S)

3



fs

2

0

10

7
5

4
3

ADMITTANCE y

FORWARD TRANSFER

2

TC = 25°C

Tc = 25°C
Pulse Test

1

–10

–3 –5–7 –2

D

125°C

75°C

VDS = –5V
Pulse Test

–3 –5 –7

(A)

–10V

–10

2

0

0 –2–4–6–8–10

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

4

10

7
5

3
2

3

10

7
5

3
2

CAPACITANCE

Ciss, Coss, Crss (pF)

2

10

7
5

3
2

–10

–3 –5–7 –2

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

0

–3 –5–72–2

–10

1

GS

(V)

Tch = 25°C

Z

f = 1MH
VGS = 0V

Ciss

Coss

Crss

2

–10

–3 –5–7 –2 –3

DS

(V)

–1

10

–3

–5 –7

–10

0

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7
5

3
2

2

10

7
5

3
2

1

10

7
5

SWITCHING TIME (ns)

3
2

0

10

–5–7 –2

–10

0

t

d(off)

t

f

–3 –5–7

DRAIN CURRENT ID (A)

–2 –3

–5 –7

–10

D

t

r

t

d(on)

Tch = 25°C

GS

= –10V

V

DD

= –15V

V

GEN

= RGS = 50Ω

R

1

–10

–2 –3 –5

–3 –5–7 –2

(A)

–10

1

–2 –3

2

Jan.1999

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI Pch POWER MOSFET

FX20ASJ-03

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

–10

Tch = 25°C

(V)

GS

–8

–6

D

= –20A

I

–20V

–25V

VDS =
–10V

–4

–2

GATE-SOURCE VOLTAGE V

0

0 4 8 12 16 20

GATE CHARGE Q

g

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

1

10

VGS = –10V

7

DS (ON)

DS (ON)

D

= 1/2I

I

5

Pulse Test

4
3

2

0

10

7
5

4
3

2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

(TYPICAL)

D

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

–50

VGS = 0V
Pulse Test

–40

(A)

S

–30

75°C

125°C

TC =
25°C

–20

–10

SOURCE CURRENT I

0

0 –0.4 –0.8 –1.2 –1.6 –2.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

–4.0

VDS = –10V

D

= –1mA

I

–3.2

(V)

–2.4

GS (th)

–1.6

VOLTAGE V

–0.8

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

SD

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

(BR) DSS

(BR) DSS

1.4

CHANNEL TEMPERATURE

(TYPICAL)

VGS = 0V

D

= –1mA

I

1.2

1.0

0.8

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

2

10

7

(ch–c)

5

th

3
2

1

10

7

D = 1.0

5

0.5

3
2

0.2

0

10

7
5

10

3
2

–1

10

0.01

Single Pulse

–4

23 57 23 57 23 57 23 57

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

0.1

0.05

0.02

–3

10

–2

PULSE WIDTH t

10

–1

P

DM

tw

T

tw

D

=

T

0

10

w

(s)

23 57

10

1

23 57

10

2

Jan.1999