Datasheet FTS2015 Datasheet (SANYO)

Ordering number : ENN6667

FTS2015

N-Channel Silicon MOSFET

FTS2015

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• 2.5V drive.

• Mount height 1.1mm.

Package Dimensions

unit : mm

2147A

[FTS2015]

3.0

0.65

85

6.4

4.5 0.95

0.425

0.5

1 : Drain
2 : Source

14

0.25

0.95

0.125

3 : Source
4 : Gate
5 : Drain
6 : Source

1.0

7 : Source
8 : Drain

0.1

SANYO : TSSOP8

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 28 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1.3 W

30 V

±10 V

7A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance |yfs| VDS=10V, ID=7A 15 22 S

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

RDS(on)1 ID=7A, VGS=4V 16 21 mΩ
RDS(on)2 ID=2A, VGS=2.5V 22 31 mΩ

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

Marking : S2015 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82200 TS IM TA-2895

No.6667-1/4

FTS2015

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 1550 pF
Output Capacitance Coss VDS=10V , f=1MHz 310 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 190 pF
Turn-ON Delay Time td(on) See specified Test Circuit 22 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 205 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=7A 60 nC
Gate Source Charge Qgs VDS=10V, VGS=10V, ID=7A 2.5 nC
Gate Drain Charge Qgd VDS=10V, VGS=10V, ID=7A 10 nC
Diode Forward Voltage V

SD

See specified Test Circuit 100 ns

r

See specified Test Circuit 165 ns

f

IS=7A, VGS=0 0.88 1.2 V

Switching Time Test Circuit

VDD=15V

V

IN
4V
0V

PW=10ms
D.C.≤1%

V

IN

G

D

ID=7A
RL=2.1Ω

V

OUT

Ratings

min typ max

Unit

P.G

15

3.5V

2.0V

12

4.0V

-- A
D

9

6

Drain Current, I

3

0

0

35

30

25

(on) -- mΩ

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

0.5 1.0 1.5 2.5 3.0

ID=2A

240612108

50Ω

S

ID -- V

DS

2.5V

3.0V

VGS=1.0V

2.0

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

7A

Gate-to-Source V oltage, VGS -- V

FTS2015

ID -- V

=7A, V

I

D

GS

GS

25°C

Ta=75°C

=2.5V

=4V

GS

--25°C

15

VDS=10V

12

1.5V

-- A
D

9

6

Drain Current, I

3

0

0

0.2 0.6 1.61.00.8

0.4 1.41.2 1.8

IT00447

Ta=25°C

IT00449 IT00450

40

35

30

(on) -- mΩ

25

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

Gate-to-Source V oltage, VGS -- V

RDS(on) -- Ta

=2A, V

I

D

--25--50

0

Ambient Temperature, Ta -- °C

IT00448

150125100755025

No.6667-2/4

100

|yfs| -- I

7
5

3
2

D

25°C

10

7
5

3
2

Ta= --25°C

75°C

Forward Transfer Admittance, |yfs| -- S

1.0

10000

1000

100

Ciss, Coss, Crss -- pF

10

1000

100

10

Switching Time, SW Time -- ns

1.0

2.0

23 57 23 57 23

Drain Current, I

Ciss, Coss, Crss -- V

7
5

3
2

7
5

3
2

7
5

3
2

05 1510 20 30

Ciss

Coss

Crss

Drain-to-Source V oltage, V

SW Time -- I

7
5

3
2

7
5

3
2

7
5

3
2

23 57 23 57 23

0.1 1.0 10

td(off)

t

f

t

r

td(on)

Drain Current, I

D

D

-- A

D

-- A

DS

DS

-- V

PD -- Ta

VDS=10V

101.00.1

IT00451

f=1MHz

25

IT00453

VDD=15V
VGS=4V

IT00455

FTS2015

I

-- V

F

100

7
5

3
2

10

7
5

3

-- A

2

F

1.0

7
5

3
2

0.1

7
5

3
2

Forward Current, I

0.01
7
5

3
2

0.001

0.3 0.6 1.20.4

Ta=75°C

25°C

--25°C

0.5 0.7 0.8 0.9 1.0 1.10.2

SD

Diode Forward Voltage, VSD -- V

V

-- Qg

GS

-- V
GS

Gate-to-Source V oltage, V

10

VDS=10V

9

ID=7A

8

7

6

5

4

3

2

1
0

15 6045 50 5535255304020100

Total Gate Charge, Qg -- nC

100

7
5

IDP=28A

3
2

ID=7A

10

7
5

-- A

3

D

2

1.0
7
5

Operation in this

3

area is limited by RDS(on)

2

Drain Current, I

0.1
7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board (1000mm

0.01
23 57 23 57 23 57 23 57

0.01 0.1 1.0 10 100

Drain-to-Source V oltage, V

A S O

100ms

DC operation

10ms

2

✕0.8mm)

-- V

DS

<10µs

1ms

VGS=0

IT00452

IT00454

100µs

IT00456

-- W
D

1.5

1.3

1.0

0.5

Mounted on a ceramic board(1000mm

2

✕0.8mm)

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Tamperature, Ta -- °C

IT00457

No.6667-3/4

FTS2015

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of August, 2000. Specifications and information herein are subject
to change without notice.

No.6667-4/4

PS